Gallium arsenide semiconductor substrate wet etching process

Abstract

The invention discloses a gallium arsenide semiconductor substrate wet etching process comprising the following step of: (1) pasting a gallium arsenide semiconductor substrate having subjected to previous processing on a sapphire carrier; (2) mechanically thinning the gallium arsenide semiconductor substrate in the step (1); immersing the gallium arsenide semiconductor substrate in the step (2) in etching liquid to be subjected to chemical corrosion; (4) taking out, cleaning, and drying the chemically corroded gallium arsenide semiconductor substrate and directly performing later photoetching and subsequent processing on the gallium arsenide semiconductor substrate. The gallium arsenide semiconductor substrate wet etching process is simple in steps, good in operability, low in processing cost, may remove damaged crystal processing surface and releasing internal stress, does not need to purchase professional processing equipment and install a matching chemical waste processing system, greatly shortens later processing technological processes, benefits an increase in production power, reduces production cost, and enhances product price competitiveness.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a gallium arsenide semiconductor substrate wet etching process. Background technique [0002] Semiconductors including Group III-V gallium arsenide substrates must undergo mechanical thinning on the back and subsequent back processing after the completion of the front-end device processing to make final usable semiconductor electronic devices, and the mechanical thinning process on the back of the semiconductor substrate takes The biggest problem is that it destroys the crystal structure of the semiconductor surface layer and causes internal stress in the substrate. Therefore, the follow-up process must be designed to remove the damaged crystal processing surface caused by the mechanical thinning process of the semiconductor substrate and release the stress generated. The follow-up traditional process method used on a large scale in the semiconductor industry is ...

AI Technical Summary

Problems solved by technology

[0003] Although the traditional chemical mechanical polishing process can remove the damaged crystal processing surface caused by the mechanical thinning process of the semiconductor substrate and release the stress generated, it has the following disadvantages: (1) It is inevitable that it will be difficult to clean after processing The chemical substances left on the surface of the substrate are very likely to cause defects in the subsequent backside perforation etching process, which will greatly reduce the performance reliability of the processed semiconductor device in the final client application; (2) Therefore, it must be targeted Design and add an additional effective surface cleaning follow-up process to thoroughly clean the chemical residues on the back surface of the semiconductor substrate; (3) It is necessary to purchase professional large-scale chemical mechanical polishing equipment and long-term purchase of special polishing pads and special chemicals. In addition, for III - V-group semiconductors also need to be equipped with complex chemical waste treatment systems to meet environmental protection requirements; (4) The cost of maintenance and use is very high