Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell

A silicon solar cell and defect repair technology, applied in the field of hydrogen passivation, can solve problems affecting solar cell performance, achieve flexible band selection, improve performance, and ensure reliable operation

Active Publication Date: 2016-03-30
JIANGNAN UNIV
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These impurities or defects will seriously affect the performance of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell
  • Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell
  • Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] figure 1 It is a structural representation of the present invention. The invention includes a detection platform for placing silicon solar cells, and the temperature of the detection platform is kept constant. Also includes:

[0033] An LED light source system, including an LED array for emitting light; the wavelength of light emitted by the LED array is 404nm, 940nm or other wavelengths;

[0034] An optical converging system is arranged on the light-emitting optical path of the LED array to converge the light emitted by the LED array to the detection area on the detection table;

[0035] A controller is used to modify the parameter values ​​of the whole device such as temperature and humidity. At the same time, it can control the compensation value of the irradiance intensity of the light emitting line of the LED array, and the parameter data such as the passivation and defects of the detected silicon solar cells Perform analysis operations. The controller is also ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photo-induced hydrogen passivation and defect repair device for an LED (Light Emitting Diode) silicon solar cell. The device comprises a test bed for placing the silicon solar cell and keeping the temperature constant, and further comprises an LED light source system, an optical convergence system and a controller, wherein the LED light source system comprises an LED array for emitting light; the optical convergence system is arranged on a light emitting path of the LED array, and is used for converging the light emitted by the LED array to a detection area of the test bed; and the controller is used for modifying the parameters of the light emitted by the LED array as well as analyzing and calculating the passivation and defect parameters of the silicon solar cell. The device improves the conversion efficiency of the solar cell by passivating impurity defects in crystalline silicon, passivating a silicon material and repairing lattice defects such as dislocation in a polycrystalline silicon material.

Description

technical field [0001] The invention relates to hydrogen passivation technology for silicon solar cells, in particular to a light-induced hydrogen passivation and defect repairing device for LED silicon solar cells. Background technique [0002] In the silicon solar cell manufacturing process, a silicon nitride film is deposited on the surface of the silicon wafer as an optical anti-reflection layer and a surface passivation layer. The commonly used thin film deposition method is PECVD method. Using this method, a large number of hydrogen atoms or hydrogen ions will be contained in the silicon nitride film and within a certain thickness near the surface of the silicon wafer. These hydrogens have strong reactivity and can react with impurities in the silicon material and various defects in the silicon lattice to produce a passivation effect, which is beneficial to the improvement of the photoelectric conversion efficiency of solar cells. [0003] For hydrogen in silicon mat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 席曦李果华孙健刚
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com