Crystalline silicon solar cell resisting to PID effect and manufacturing method thereof

Abstract

The invention discloses a crystalline silicon solar cell resisting to a PID effect. The crystalline silicon solar cell comprises a silicon substrate and a passive film arranged on the silicon substrate. The passive film comprises a compact layer SiO2, a loose layer SiO2, a compact layer Si3N4 and a loose layer Si3N4 all of which sequentially deposit on the front surface of the silicon substrate in a laminated mode. In addition, the invention relates to a manufacturing method of the crystalline silicon solar cell. The manufacturing method comprises the steps of texture making, diffusion, etching, oxidation, PECVD, silk-screen printing and sintering test. Double SiO2 / Si3N4 films composed of an SiO2 passive film growing under the low temperature and an Si3N4 film are adopted so as to obviously improve the performance of the solar cell and enhance the passivation effect of the surface of the solar cell, wherein the Si3N4 film is formed in the PECVD mode and has the hydrogen passivation function and good antireflection effect.

Description

technical field [0001] The invention relates to a crystalline silicon solar cell with anti-PID effect and a preparation method thereof. Background technique [0002] PID-Potential-induced degradation (Potential-induced degradation) was first discovered by Sunpower in 2005. The long-term high voltage of the component causes leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the cell, so that the cell The passivation effect of the front surface is weakened, which leads to the decrease of Uoc and FF of the cell, and the power attenuation of the cell and module; domestic power stations have also discovered the PID phenomenon one after another, and the output power of the module gradually decreases under the PID effect until there is no output power; conventional crystalline silicon solar cell technology The steps are: texturing-diffusion-etching-PECVD-screen printing-sintering test; [0003] The silicon nitri...

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Problems solved by technology

[0003] The silicon nitride film of crystalline silicon solar cells produced by this process cannot meet the insulation requirements, the PID attenuation phenomenon is very serious, and the output power of the module drops significantly.

[0004] The PN junction of ordinary crystalline silicon solar cells is only protected by a silicon nitride film, and the adhesion between silicon nitride and silicon materials is poor, and Si-SiN 4 The interface stress of the structure is large and the interface state density is high, which will cause instability and affect the passivation effect of the surface

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