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Fabrication method of n-type solar cell

A solar cell, n-type technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to achieve the best passivation performance and contact performance, failure to achieve battery conversion efficiency, narrow battery sintering process window, etc., to achieve passivation Good oxidation performance and contact performance, reduced impact, and improved hydrogen passivation performance

Inactive Publication Date: 2018-03-30
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of preparation method of n-type solar cell, the contact resistance that forms is lower than conventional method, and the surface passivation film also has better passivation performance after second heat treatment, solves the problem existing in the prior art The traditional sintering temperature is high, and high-temperature sintering has a serious impact on the passivation performance of the emitter and surface field of the battery. The battery sintering process window is narrow because it involves multiple electrode components and multiple passivation structures. It is impossible to achieve the best passivation performance and contact performance at the same time, so that the best battery conversion efficiency cannot be achieved

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  • Fabrication method of n-type solar cell
  • Fabrication method of n-type solar cell
  • Fabrication method of n-type solar cell

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Effect test

Embodiment 1

[0038] The preparation method of n-type solar cell is as follows:

[0039] 1) Use 2%-3% KOH solution on the n-type silicon substrate 1 to carry out alkali texturing at a temperature of 70-80 degrees, and use HF and HCl acid solution to clean the surface.

[0040] 2) Prepare the emitter 2. The emitter 2 is prepared by BBr3 liquid-state carrying source diffusion method, and the sheet resistance is 90 ohm / sq.

[0041] 3) Perform wet edge insulation etching. On a chain cleaner, use a mixed acid solution of HF and HNO3 to remove parasitic junctions formed on the edges and back of the battery.

[0042] 4) Perform surface field preparation. The surface field junction preparation method is an external doping source method, and an n+ surface field 4 is formed on the substrate by printing a phosphorous-containing paste and advancing at a high temperature. And the surface field is localized, grid-shaped, with a line width of 150um and a line spacing of 1.6um.

[0043] 5) Prepare the...

Embodiment 2

[0049] figure 2 It is the solar cell structure of the second embodiment. The preparation method of n-type solar cell is as follows:

[0050] 1) Use 2%-3% KOH solution on the n-type silicon substrate 1 to carry out alkali texturing at a temperature of 70-80 degrees, and use HF and HCl acid solution to clean the surface.

[0051] 2) Prepare the emitter 2. The emitter 2 is prepared by BBr3 liquid-state carrying source diffusion method, and the sheet resistance is 90 ohm / sq.

[0052] 3) Perform wet edge insulation etching. On a chain cleaner, use a mixed acid solution of HF and HNO3 to remove parasitic junctions formed on the edges and back of the battery.

[0053] 4) Perform surface field preparation. The preparation method of the surface field junction is to grow a 1nm silicon oxide layer as the thin tunnel passivation layer 10 by thermal oxidation. Then, a 100 nm in-situ doped n-type doped polysilicon layer 11 is deposited using a low-pressure vapor-phase chemical depositi...

Embodiment 3

[0059] The preparation method of n-type solar cell is specifically as follows, such as Figure 5 Shown:

[0060] 1) Use 2%-3% KOH solution on the n-type silicon substrate 1 to carry out alkali texturing at a temperature of 70-80 degrees, and use HF and HCl acid solution to clean the surface.

[0061] 2) Prepare the emitter 2 on the front side of the silicon substrate. The emitter 2 is prepared by BBr3 liquid-state carrying source diffusion method, and the sheet resistance is 90 ohm / sq.

[0062] 3) Perform wet edge insulation etching. On a chain cleaner, use a mixed acid solution of HF and HNO3 to remove parasitic junctions formed on the edges and back of the battery.

[0063] 4) Perform surface field preparation. The surface field junction preparation method is an external doping source method, and an n+ surface field 4 is formed on the back of the substrate by using a method of printing phosphorus-containing paste and advancing at a high temperature. And the surface fiel...

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Abstract

The invention provides a fabrication method of an n-type solar cell. The fabrication method comprises the steps of performing surface texturing and cleaning on an n-type silicon substrate; fabricatingan emitter on a front surface of the silicon substrate; performing insulation processing; fabricating a back-surface field and a back-surface passivation layer; fabricating a front-surface passivation and anti-reflection film; patterning the front surface and a back surface to form an electrode paste layer containing a conductive constituent; performing first thermal treatment process; performingsecond thermal treatment process; and comparing the second thermal treatment process with the first thermal treatment process. By the thermal treatment process for twice, the contact resistance and the series resistance of a battery electrode can be reduced, the sintering temperature can be reduced, the influence of high-temperature sintering on the emitter of the battery and passivation performance of a surface field is reduced, and the battery sintering process window can be expanded; and by thermal treatment for twice, the hydrogen passivation performance of a passivation film can be improved, the integral electrical performance conversion efficiency is improved, so that optimal passivation performance and optimal contact performance are simultaneously achieved.

Description

technical field [0001] The invention relates to a preparation method of an n-type solar cell. Background technique [0002] At present, with the gradual depletion of fossil energy, solar cells are used more and more widely as a new energy alternative. A solar cell is a device that converts the sun's light energy into electrical energy. Solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to extract the carriers, which is beneficial to the effective use of electrical energy. [0003] In the steps of solar cells currently used, a high-temperature sintering step will be performed after the coating of the patterned conductive paste is formed. This step will cause the following problems: the traditional sintering temperature is high, and high-temperature sintering is harmful to the battery. The passivation performance of the emitter and surface field has a serious impact; the traditional sintering, the contact resistance and series resist...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0224
CPCH01L31/022425H01L31/068H01L31/1804H01L31/1864H01L31/1868Y02E10/547Y02P70/50
Inventor 李华靳玉鹏
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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