Hydrogen passivation method for solar cell

Abstract

The invention relates to a hydrogen passivation method for a solar cell, which comprises the following steps: (1) keeping the solar cell in a temperature range of 100 DEG C to 400 DEG C; (2) simultaneously applying a forward voltage to a pn junction of the solar cell to reduce a built-in potential. The method disclosed by the invention has the beneficial effects of solving the difficult problem how to introduce high-concentration hydrogen atom into a solar cell matrix, having an obvious passivation effect on impurities and defects in a semiconductor material matrix and reducing recombination activity of the semiconductor material matrix used as an electronic-hole composite center; the method is beneficial for improving conversion efficiency of the solar cell. Meanwhile, the method can be well compatible to the manufacturing process of an existing solar cell piece, is easy for industrialization implementation and has high practical value.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a hydrogen passivation method for solar cells. Background technique [0002] Solar power technology is currently one of the most important renewable energy technologies. At present, the cost of solar power generation is still higher than that of traditional energy sources, which restricts its large-scale application. For this reason, the industrial and scientific circles have been devoting themselves to improving the photoelectric conversion efficiency of solar cells and reducing the manufacturing cost of solar cells. [0003] Solar power generation is based on the photovoltaic effect of semiconductor materials. The p-type semiconductor and the n-type semiconductor contact to form a pn junction, which generates a strong internal electric field. When light irradiates the semiconductor, the electrons and holes generated by the excitation are separated by the ele...

AI Technical Summary

Problems solved by technology

[0011] Whether it is deposition of silicon nitride film or hydrogen plasma treatment, the problem with these methods is that hydrogen can only be introduced into the near-surface layer of the silicon crystal (usually less than a few microns), but cannot introduce high-concentration hydrogen atoms into the matrix, so Hydrogen atoms have a very weak passivation effect on impurities and defects inside the solar cell matrix

[0012] How to introduce a higher concentration of hydrogen atoms into the solar cell matrix and maximize its passivation effect on impurities and defects in the matrix is ​​still very difficult.

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