Process for preparing crystalline silicon solar cell by secondary texturing method

A technology for solar cells and secondary texturing, applied in sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems of reduced surface recombination rate of silicon wafers, operator and environmental pollution, increased process steps, etc. Surface recombination rate, prevention of negative effects, effect of low fragmentation rate

Inactive Publication Date: 2011-09-14
山东力诺太阳能电力股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing method of making texture mainly uses a large number of chemical reagents and water sources for cleaning, so most of the chemical reagents used in the traditional method will bring considerable pollution and danger to the operator and the environment. There is also a more commonly u

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Select polycrystalline silicon wafers; the silicon wafers undergo conventional cleaning processes and acid texturing, and then use a reactive ion etching system containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (80sccm)+O 2 (8sccm); Power: 180W; Pressure: 30Pa; Etching time: 260 s. After etching, place the silicon wafer in a solution filled with 2% hydrofluoric acid for 80s; place it in a solution filled with 15% hydrochloric acid and react for 150s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, and after a passivation time of 1000s, silicon nitride film is deposited, screen printing, and sintering to obtain finished solar cells.

Embodiment 2

[0019] Select P-type monocrystalline silicon wafers; silicon wafers undergo conventional cleaning processes and alkali texturing, and then use reactive ion etching systems containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (100sccm)+O 2 (9sccm); Power: 230W; Pressure: 80Pa; Etching time: 90 s. After etching, place the silicon wafer in a solution filled with 8% hydrofluoric acid and react for 30s; place it in a solution filled with 10% hydrochloric acid and react for 200s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, the passivation time is 600s, and then silicon nitride film is deposited, screen printed, and sintered to obtain finished solar cells.

Embodiment 3

[0021] Select N-type monocrystalline silicon wafers; the silicon wafers undergo conventional cleaning processes and alkali texturing, and then use a reactive ion etching system containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (60sccm)+O 2 (5sccm); Power: 100W; Pressure: 100Pa; Etching time: 200 s. After etching, place the silicon wafer in a solution filled with 5% hydrofluoric acid for 60s; place it in a solution filled with 5% hydrochloric acid for 260s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, and the passivation time is 800s, and then silicon nitride film is deposited, screen printed, and sintered to obtain finished solar cells.

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PUM

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Abstract

The invention relates to a method for preparing a crystalline silicon solar cell. The method specifically comprises the following steps of: 1) performing wet texturing, and performing reactive ion etching, passivation and deionization for secondary texturing; and 2) diffusing a silicon chip obtained by the step 1), and sequentially performing edge etching, removal of phosphorosilicate glass, hydrogen passivation, deposition of a silicon nitride film, silk screening of cathode, anode and back aluminum, and sintering. In the method for preparing the crystalline silicon solar cell, the method for prolonging the optical distance of light in crystalline silicon and reducing light reflection loss is mainly provided; and the crystalline silicon chip prepared by the method provided by the invention has relatively lower surface reflectivity, and the hydrogen passivation performed before the deposition of the silicon nitride film can reduce silicon dangling bonds, form Si-H, reduce surface states, increase short-circuit current and fulfill the aim of improving the conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a process for preparing crystalline silicon solar cells by a secondary texturing method. Background technique [0002] Among all kinds of solar cells, crystalline silicon cells have always occupied the most important position. In recent years, great achievements and progress have been made in improving efficiency and reducing cost of crystalline silicon solar cells, further enhancing its dominant position in the future photovoltaic industry. The strength of the silicon wafer's ability to reflect sunlight directly affects the performance of solar cells, and the step that directly affects the silicon wafer's ability to reflect sunlight to sunlight in the production of solar cells is the silicon wafer texturing process. The existing method of making texture mainly uses a large amount of chemical reagents and water sources for cleaning. In this way, most of the chemica...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 任现坤姜言森杨青天刘鹏李玉花徐振华程亮王兆光张春艳
Owner 山东力诺太阳能电力股份有限公司
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