Process for preparing crystalline silicon solar cell by secondary texturing method
A technology for solar cells and secondary texturing, applied in sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems of reduced surface recombination rate of silicon wafers, operator and environmental pollution, increased process steps, etc. Surface recombination rate, prevention of negative effects, effect of low fragmentation rate
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Embodiment 1
[0017] Select polycrystalline silicon wafers; the silicon wafers undergo conventional cleaning processes and acid texturing, and then use a reactive ion etching system containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (80sccm)+O 2 (8sccm); Power: 180W; Pressure: 30Pa; Etching time: 260 s. After etching, place the silicon wafer in a solution filled with 2% hydrofluoric acid for 80s; place it in a solution filled with 15% hydrochloric acid and react for 150s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, and after a passivation time of 1000s, silicon nitride film is deposited, screen printing, and sintering to obtain finished solar cells.
Embodiment 2
[0019] Select P-type monocrystalline silicon wafers; silicon wafers undergo conventional cleaning processes and alkali texturing, and then use reactive ion etching systems containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (100sccm)+O 2 (9sccm); Power: 230W; Pressure: 80Pa; Etching time: 90 s. After etching, place the silicon wafer in a solution filled with 8% hydrofluoric acid and react for 30s; place it in a solution filled with 10% hydrochloric acid and react for 200s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, the passivation time is 600s, and then silicon nitride film is deposited, screen printed, and sintered to obtain finished solar cells.
Embodiment 3
[0021] Select N-type monocrystalline silicon wafers; the silicon wafers undergo conventional cleaning processes and alkali texturing, and then use a reactive ion etching system containing fluoride ions and oxygen ions (CF 4 +O 2 ), the reaction conditions are, gas: CF 4 (60sccm)+O 2 (5sccm); Power: 100W; Pressure: 100Pa; Etching time: 200 s. After etching, place the silicon wafer in a solution filled with 5% hydrofluoric acid for 60s; place it in a solution filled with 5% hydrochloric acid for 260s; ;Using PECVD process, silane that is easy to ionize is first introduced to generate hydrogen ions, and the passivation time is 800s, and then silicon nitride film is deposited, screen printed, and sintered to obtain finished solar cells.
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