4results about How to "Reduce surface state" patented technology

The invention relates to the field of semiconductor technology, and proposes a method for passivating the cavity surface of a GaN-based EEL laser chip, comprising the following steps: S1, cavity surface dehumidification: heating the cavity surface of a bar strip to remove the moisture; S2, cavity surface cleaning: continuing to increase the temperature, and introducing gas to bombard the cavity surface; S3, cavity surface annealing: continuing to increase the temperature, and introducing gas to bombard the cavity surface, and then annealing to form a transition layer; the gas in steps S2 and S3 is one or more of O2, N2 and H2; S4, cavity surface passivation: transferring the bar strip into a passivation chamber, maintaining the annealing temperature, introducing one or more of O2, O3 or N2 to bombard the cavity surface, and forming an Al2O3, AlON or AlN single crystal film on the surface of the transition layer. The invention adopts high-temperature annealing to form a transition layer on the cavity surface. Compared with CaN, the mismatch rate between the transition layer and Al2O3, AlON and AlN is lower, it is easier to grow a single crystal film, and it will not cause light absorption of the cavity surface, thereby achieving the technical effect of increasing the cavity surface damage threshold and extending the service life of the laser.

The invention discloses an ultraviolet photoelectric detector and a preparation method thereof, and relates to the field of semiconductor optoelectronic devices. The ultraviolet photoelectric detector comprises an epitaxial layer, a channel layer, a barrier layer, a dielectric layer, a negative electrode and a positive electrode, wherein the epitaxial layer, the channel layer and the barrier layer are stacked from bottom to top; the channel layer and the barrier layer form a transparent electrode; the positive electrode is arranged on the epitaxial layer, and the positive electrode and the transparent electrode are arranged in a mutually-crossed interdigital distribution mode; the negative electrode is arranged on the barrier layer; and the dielectric layer is positioned on the channel layer to form a surrounding structure for the interdigital part of the barrier layer so as to isolate the positive electrode from the negative electrode. According to the ultraviolet photoelectric detector, the metal interdigitals and the transparent interdigitals are alternately arranged, the single photoetching electrode distance can be enlarged, the metal stripping difficulty is reduced, the dielectric layer is used for achieving the isolation effect between the negative electrode and the positive electrode, short circuit of the negative electrode and the positive electrode is prevented, and therefore the dark current of the ultraviolet photoelectric detector is reduced.

The application provides a dynamic diode power generation device and a preparation method thereof, a generator and a vehicle, and belongs to the technical field of vehicle parts. The dynamic diode power generation device comprises a first structural layer, an insulating layer and a second structural layer. The insulating layer and the first structural layer are stacked along a first direction, and the second structural layer is arranged on a side of the insulating layer away from the first structural layer, and the second structural layer is adapted to contact and slide on the surface of the insulating layer. The first structural layer and the second structural layer are adapted to form a heterojunction. The dynamic diode power generation device provided in the application embodiment can reduce carrier recombination and the formation of dark current, thereby forming stable and sustainable current and improving electrical performance.

The invention discloses a method for carrying out photoelectrocatalytic modification on a ferric oxide photoanode by constructing a bottom layer and top layer structure, a large number of dense holes are formed in a nanorod through simple annealing in a manner of spin-coating ZrOx on the surface of FeOOH for several times, the specific surface area is greatly increased, the hole transfer distance is shortened, and the photoelectrocatalytic modification of the ferric oxide photoanode is realized. In addition, the problem of electron reinjection of the contact interface of the iron oxide and the FTO glass is solved by regulating and controlling the thickness of the Nb2O5 at the bottom layer, meanwhile, exogenous niobium ion doping of the iron oxide is realized, the carrier concentration and conductivity in the iron oxide are effectively improved, and the conductivity of the FTO glass is improved. And meanwhile, the existence of the bottom layer can effectively inhibit large-ion-radius Sn < 4 + > in the SnO2 conducting layer from entering iron oxide crystal lattices to generate internal defects.