Interface treatment technology for hetero junction solar cell

Abstract

The invention discloses an interface treatment technology for a hetero junction solar cell. The method is characterized in that: the technology can be applied to the manufacturing of a thin film/crystalline silicon hetero junction solar cell, reaction gases can be ionized by utilizing a plasma enhanced chemical vapor deposition (PECVD) system or a hotwire chemical vapor deposition (HWCVD) system to generate H, and the H is transported to a crystalline silicon substrate by a gas phase and reacted with the surface of crystalline silicon to effectively passivate defect states such as unsaturated dangling bonds and the like on the surface of the crystalline silicon, reduce hetero junction interface recombination and facilitate improvement in the overall performance of the hetero junction solar cell.

Description

technical field [0001] The invention relates to the preparation of heterojunction solar cells, in particular to an interface treatment method for improving the performance of heterojunction solar cells. technical background [0002] Heterojunction solar cells deposit P-type (N-type) silicon films on N-type (P-type) crystalline silicon wafers as emitters, and form heterojunction structures at the interface between the film and crystalline silicon. The junction performance plays a decisive role. Usually, there are a large number of unsaturated dangling bonds and other defect states on the surface of crystalline silicon, which increases the recombination of the heterojunction interface, seriously affects the open circuit voltage of the cell, and limits the conversion efficiency of the solar cell. It can be seen that, Crystal-silicon interface treatment plays a vital role in improving the efficiency of heterojunction solar cells and improving the stability of the cells. [0003...

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Problems solved by technology

Among them, the deposition of doped silicon film on the surface is mainly realized by PECVD technology, which has high requirements for PECVD process, and the high doping concentration will cause the decrease of open circuit voltage; the preparation of oxide layer on the surface of crystalline silicon by thermal oxidation method can be better Passivate the surface, but the thickness of the ultra-thin oxide layer is difficult to control, and the industrialization process is difficult. What's more, due to the low refractive index of silicon dioxide, it is difficult to meet the dual functions of effective anti-reflection and surface passivation of high-efficiency batteries at the same time

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