Production method of low-noise germanium-silicon heterojunction bipolar transistor

A technology of heterojunction bipolar and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of increased 1/f noise of noisy devices, low current amplification of HBT, and increased white noise of devices, etc. , to achieve the effect of improving noise characteristics, reducing defect density and surface state
CN102412149AActive Publication Date: 2012-04-11SHANGHAI HUAHONG GRACE SEMICON MFG CORP
5 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2012-04-11

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a production method of a low-noise germanium-silicon heterojunction bipolar transistor, comprising the following steps of: step 1, applying a polysilicon layer for an emitting electrode of the germanium-silicon heterojunction bipolar transistor, doping the emitting electrode, then, executing quick thermal annealing, and diffusing and redistributing the impurities; step 2, executing pre-amorphization ion implantation with medium and high dosage of large atom impurities on the polysilicon emitting electrode, annealing quickly, realizing re-crystallization of the amorphous emitting electrode, and generating a single crystal layer, thereby forming an emitting area / base area junction by the monocrystal silicon / monocrystal germanium and silicon; step 3, executing quick thermal annealing after the process of pre-amorphization ion implantation, and crystallizing the amorphous emitting electrode. With the method provided by the invention, the noise caused by a polysilicon emitting electrode is reduced, and noise characteristics of devices are improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a germanium-silicon heterojunction bipolar transistor. Background technique

[0002] A very important application field of silicon germanium heterojunction bipolar transistor (SiGe HBT) is the low noise amplifier, which takes full advantage of the low noise advantage of silicon germanium heterojunction bipolar transistor (SiGe HBT). Bipolar transistors (SiGe HBT) generally use polysilicon emitters, which are relatively easy to form crystal defects and surface states at the emitter / base junction, and the 1 / f noise of noisy devices increases, thereby increasing the white noise of the device. However, the emitter cannot use a silicon single crystal layer, because the N-type impurities in the emitter cannot form a relatively uniform distribution in the silicon single crystal layer, which will reduce the injection efficiency of carriers fr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More