Production method of low-noise germanium-silicon heterojunction bipolar transistor

Abstract

The invention discloses a production method of a low-noise germanium-silicon heterojunction bipolar transistor, comprising the following steps of: step 1, applying a polysilicon layer for an emitting electrode of the germanium-silicon heterojunction bipolar transistor, doping the emitting electrode, then, executing quick thermal annealing, and diffusing and redistributing the impurities; step 2, executing pre-amorphization ion implantation with medium and high dosage of large atom impurities on the polysilicon emitting electrode, annealing quickly, realizing re-crystallization of the amorphous emitting electrode, and generating a single crystal layer, thereby forming an emitting area / base area junction by the monocrystal silicon / monocrystal germanium and silicon; step 3, executing quick thermal annealing after the process of pre-amorphization ion implantation, and crystallizing the amorphous emitting electrode. With the method provided by the invention, the noise caused by a polysilicon emitting electrode is reduced, and noise characteristics of devices are improved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a germanium-silicon heterojunction bipolar transistor. Background technique [0002] A very important application field of silicon germanium heterojunction bipolar transistor (SiGe HBT) is the low noise amplifier, which takes full advantage of the low noise advantage of silicon germanium heterojunction bipolar transistor (SiGe HBT). Bipolar transistors (SiGe HBT) generally use polysilicon emitters, which are relatively easy to form crystal defects and surface states at the emitter / base junction, and the 1 / f noise of noisy devices increases, thereby increasing the white noise of the device. However, the emitter cannot use a silicon single crystal layer, because the N-type impurities in the emitter cannot form a relatively uniform distribution in the silicon single crystal layer, which will reduce the injection efficiency of carriers fr...

AI Technical Summary

Problems solved by technology

[0002] A very important application field of silicon germanium heterojunction bipolar transistor (SiGe HBT) is the low noise amplifier, which takes full advantage of the low noise advantage of silicon germanium heterojunction bipolar transistor (SiGe HBT). Bipolar transistors (SiGe HBT) generally use polysilicon emitters, which are easier to form crystal defects and surface states at the emitter / base junction, and the 1 / f noise of noisy devices increases, thereby increasing the white noise of the device

However, the emitter cannot use a silicon single crystal layer, because the N-type impurities in the emitter cannot form a relatively uniform distribution in the silicon single crystal layer, which will reduce the injection efficiency of carriers from the emitter region to the base region, resulting in HBT. low current magnification

Therefore, low noise and high current amplification have become a pair of contradictions in the performance parameters of SiGe HBT devices.

Images