Method for passivating cavity surface of GaAs-based semiconductor laser
A laser and semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of high instrument cost, unsatisfactory oxidation and interface state removal effect, complex vacuum cleavage technology, etc., to achieve simple steps, reduce non-destructive Effects of radiation recombination and cavity surface heating, improvement of COD and reliability
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[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0027] Such as figure 1 as shown, figure 1 The method flowchart of the cavity surface passivation of the GaAs-based semiconductor laser provided by the present invention, the method comprises:
[0028] Step 1: Soak the cleaved laser bar in ammonia sulfide solution, passivate the laser bar, and deposit a sulfur passivation layer on the front and rear cavity surfaces of the laser bar;
[0029] Step 2: Rinse the bar with deionized water, dehydrate it with acetone and isopropanol, then blow it dry with nitrogen, then install it on the coating rack and put it into the MOCVD instrument;
[0030] Step 3: Vacuum the MOCVD instrument, turn on the baking and heating, and pass in the protective gas;
[0031] Step 4: first raise t...
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