Detection system and method for detecting thin film memristive characteristics by utilizing conductive atomic force microscope device
An atomic force microscope and thin film detection technology, applied in the field of microelectronics, can solve the problems of high reset current, device instability and uniformity, and device power consumption, etc., and achieve the effect of increasing current limiting function and convenient detection method.
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[0017] The accompanying drawings are for illustrative purposes only, and should not be construed as limitations on this patent; in order to better illustrate this embodiment, certain components in the accompanying drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art It is understandable that some well-known structures and descriptions thereof may be omitted in the drawings. The positional relationship described in the drawings is for illustrative purposes only, and should not be construed as a limitation on this patent.
[0018] figure 1 Si in the embodiment of the present invention ++ / Schematic diagram of the structure of a NiO memristor. Including substrate (bottom electrode) Si ++ , a resistive dielectric layer of NiO, and a conductive atomic force microscopy (C-AFM) probe used as the top electrode. Si in the embodiment of the present invention ++ / NiO nano-memristor specific preparation proce...
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