Preparation method of semiconductor nanowire array with optimal photoelectric efficiency

Abstract

The invention discloses a method for preparing a semiconductor nanowire array with optimal photoelectric performance. The method first deposits a gold film by thermal evaporation and anneals to form random and uniformly distributed catalyst particles, and then according to the prepared III-V nanowire material system, select the optimal V / III beam current ratio, grow a series of nanowire array samples at different substrate temperatures, and then use a conductive atomic force microscope to perform statistical evaluation of the vertical photoelectric properties of a single nanowire, and finally The optimal preparation conditions were determined according to the average optoelectronic properties of single nanowires. This method is suitable for catalytic molecular beam epitaxy to grow III-V nanowire arrays such as gallium arsenide, and uses a direct, fast and simple method to evaluate and determine the optimal growth conditions of nanowire arrays through metal catalysis, and then prepares a arrays of semiconducting nanowires with optimal optoelectronic efficiency, and thus, the method is of great interest for the fabrication of high-efficiency solar cells and ultrasensitive photodetectors.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material with a low-dimensional structure, in particular to a method for preparing a semiconductor nanowire array with optimal photoelectric efficiency. Background technique [0002] Semiconductor vertical nanowire arrays are beneficial for high-efficiency photoelectric conversion both electronically and optically. First of all, nanowires are natural one-dimensional light-wave antennas, coupled with the conduction-resonance mode induced by the array structure, forming a collective "optical trap" effect, making vertical nanowire arrays easier to realize than bulk materials and other semiconductor low-dimensional structures. Light absorption; at the same time, the one-dimensional structure is also more conducive to the efficient collection of photogenerated carriers. These advantages make semiconducting vertical nanowire arrays increasingly promising for applications in high-efficiency sola...

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Problems solved by technology

However, up to now, there is still a lack of a method for preparing semiconductor nanowire arrays that is optimized at both the electrical and optical levels. Although the advantages of using catalytic molecular beam epitaxy to grow nanowire arrays are huge, the crystal quality cannot be guaranteed. Optimization is not easy, and the ideal array structure is not easy to control

[0006] In addition, the current evaluation methods for the performance of nanowire materials mainly include the analysis of the lattice structure of nanowires by high-resolution electron microscopy and the analysis of optical quality and light absorption characteristics by spectroscopic methods. On the one hand, these methods are complicated in sample preparation and harsh in measurement conditions; On the one hand, they are all separate measurements of the electronic and optical aspects of nanowires, and there is currently a lack of an efficient, direct measurement and evaluation method for the optoelectronic properties of vertical nanowires

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