A Characterization Method of Periodic Stripe Domain Structure of Ferroelectric Thin Films

A ferroelectric thin film, periodic technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problem of not conducting more detailed analysis, etc., and achieve the effect of large polarization value and good ferroelectricity
CN110634871BActive Publication Date: 2021-10-29HUAIYIN INSTITUTE OF TECHNOLOGY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUAIYIN INSTITUTE OF TECHNOLOGY
Publication Date
2021-10-29

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Abstract

The invention discloses a periodic striped domain structure of a ferroelectric thin film and a characterization method thereof, belonging to the technical field of micro-nano characterization, and the method comprises the following steps: preparing a bismuth ferrite thin film by pulse laser deposition; characterizing it by an X-ray diffractometer The lattice constant is determined to be a rhomboid phase structure, the piezoelectric butterfly curve is used to confirm its ferroelectricity and coercive voltage, and its morphology is characterized by atomic force microscopy; the periodic stripes in nanoferroelectric thin films are characterized by vector piezoelectric force microscopy Banded domains, the three-dimensional domain structure was determined by fine vector piezoelectric force microscopy analysis method; the domain walls of the striped domains were observed to conduct electricity by using conductive atomic force microscopy. The ferroelectric thin film preparation method provided by the present invention can be used in non-volatile, high-density ferroelectric random access memory; at the same time, the provided characterization method can accurately provide the three-dimensional domain structure and domain wall of the periodic strip domain Conduction; provide solutions for the development and characterization of high-density ferroelectric memory devices.
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Description

technical field

[0001] The invention relates to the technical field of micro-nano characterization, in particular to a characterization method for the periodic striped domain structure of a ferroelectric thin film. Background technique

[0002] Ferroelectric random access memory has the advantages of low energy consumption, fast writing, and much larger erasing times, and is expected to become the next generation of non-volatile memory. Ferroelectric storage requires ferroelectric materials to have a large polarization value and strong piezoelectric response at room temperature, which is conducive to the development and detection of devices based on ferroelectric materials. Among them, bismuth ferrite (BiFeO 3 , abbreviated as BFO) the Curie temperature and Neel temperature of this material are 370 ° C and 830 ° C, respectively, with antiferromagnetic and ferroelectric properties, and the remanent polarization values ​​​​in the (111) and (001) directions are 100 μC / cm 2 ...

Claims

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