The invention belongs to the technical field of condensed
physics and material science, and particularly relates to an ultrathin
single crystal ferroelectric PZT film and a preparation method thereof. The method comprises the following steps of: bombarding a PZT target material by using pulse
laser to grow a
single crystal ferroelectric PZT film on a
single crystal substrate by using a pulse
laser deposition PLD method; the
deposition process comprises two stages: a single
crystal layer growth stage and a rapid cooling stage; the method is simple and easy to operate, and the growth of the ultrathin ferroelectric
single crystal film is realized by controlling the
laser energy, the substrate deposition growth temperature and the
oxygen pressure during PLD growth. According to the method, the growth process is monitored in real time by using a high-energy
electron diffractometer RHEED, the quality and thickness of a thin film
crystal during growth are ensured, and the atomic-scale flatness of the surface of a prepared sample is proved by observing the surface morphology of the prepared sample through an atomic force
microscope; the PZT thin film grown on the
single crystal substrate still keeps
ferroelectricity when only two
layers of
crystal lattices are thinnest, and ferroelectric polarization overturning can be achieved.