Semiconductor structure and method for manufacturing semiconductor device

Abstract

A semiconductor device having a polymer layer and a method of fabricating the same is provided. A two-step plasma treatment for a surface of the polymer layer includes a first plasma process to roughen the surface of the polymer layer and loosen contaminants, and a second plasma process to make the polymer layer smoother or make the polymer layer less rough. An etch process may be used between the first plasma process and the second plasma process to remove the contaminants loosened by the first plasma process. In an embodiment, the polymer layer exhibits a surface roughness between about 1% and about 8% as measured by Atomic Force Microscopy (AFM) with the index of surface area difference percentage (SADP) and/or has surface contaminants of less than about 1% of Ti, less than about 1% of F, less than about 1.5% Sn, and less than about 0.4% of Pb.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a semiconductor device whose surface is treated with plasma to reduce or avoid contamination. Background technique [0002] Since the advent of the integrated circuit (IC), the semiconductor industry has continued to grow rapidly due to the continuous improvement in the integration of various electronic components (such as transistors, diodes, resistors, capacitors, etc.). Mainly, the improvement of density comes from the continuous reduction of the minimum size of components, so that more components can be integrated into a unit area. [0003] In recent years, it has been seen that many changes in semiconductor packaging have impacted the entire semiconductor industry. Surface-mount technology (SMT) and ball grid array (BGA) packaging are generally important steps for high-throughput packaging of various IC components, and also reduce the pitch of pads on printed circuit bo...

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Problems solved by technology

However, it was found that this rough surface also contained additional contaminants from the process

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