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Measuring method for dislocation density of heteroepitaxially grown gallium nitride

A technology of heteroepitaxy and density determination, which is used in measurement devices, preparation of test samples, and material analysis using measurement secondary emissions, which can solve problems such as inability to accurately and quickly analyze dislocations.

Inactive Publication Date: 2014-01-01
NANJING UNIV OF INFORMATION SCI & TECH
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Problems solved by technology

This technique also cannot accurately and quickly analyze dislocations and requires a specific light source in the ultraviolet range

Method used

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  • Measuring method for dislocation density of heteroepitaxially grown gallium nitride
  • Measuring method for dislocation density of heteroepitaxially grown gallium nitride
  • Measuring method for dislocation density of heteroepitaxially grown gallium nitride

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Embodiment Construction

[0038] The gallium nitride epitaxial film grown by hydride vapor phase epitaxy was wet-etched by molten potassium hydroxide and magnesium oxide eutectic.

[0039] The corrosion sample was grown by the hydride vapor phase epitaxy technique, with c-plane sapphire as the substrate, and a gallium nitride epitaxial film with a thickness of about 10 μm. The scanning range of AFM photos is 2 μm×2 μm. Characterization by scanning electron microscope and atomic force microscope shows that the surface of GaN epitaxial film is smooth without other obvious structural features, and the surface roughness (rms) is 0.334nm. image 3 and Figure 4 Shown are the scanning electron microscope and atomic force microscope photos of GaN epitaxial film before etching.

[0040] Analysis steps:

[0041] (1) Perform conventional chemical cleaning on the heteroepitaxially grown GaN epitaxial film to remove the contamination on the sample surface: ultrasonic cleaning with acetone, methanol, ethanol and...

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Abstract

The invention relates to a method for observing the dislocation type of a heteroepitaxial growth material of gallium nitride (GaN) and measuring the dislocation density. The method is characterized by directly observing the dislocation type of the surface of a gallium nitride epitaxial film by using etching of molten potassium hydroxide and a potassium hydroxide and magnesia eutectic mixture in combination with a scanning electron microscope and an atomic force microscope, analyzing and researching the characteristics and the distribution of dislocations of different types and calculating the dislocation density. The method is convenient and fast and is suitable for analytical testing of nitrides which grow through different processes. The characteristics of dislocations of different types in different nitride samples can be researched to obtain the distribution of various dislocations on the surface, and the densities and the total dislocation density of the dislocations of various types can be accurately calculated.

Description

[0001] technical field [0002] The present invention relates to the observation of the dislocation type and the measurement method of the dislocation density of gallium nitride (GaN) heterogeneous epitaxial growth materials, more precisely, it utilizes molten potassium hydroxide and potassium hydroxide, magnesium oxide eutectic material etching Combining scanning electron microscopy and atomic force microscopy to visually observe the types of dislocations on the surface of gallium nitride epitaxial films, analyze and study the characteristics and distribution of different types of dislocations, and calculate the dislocation density method, which belongs to the field of semiconductor material dislocation observation and dislocation density characterization. [0003] Background technique [0004] Gallium nitride-based materials are direct wide-bandgap semiconductor materials that are currently being researched in the field of optoelectronics. It has the advantages of high sa...

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Application Information

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IPC IPC(8): G01N23/22G01Q60/24G01N1/32
Inventor 刘战辉肖韶荣梁成李庆芳陈玉林
Owner NANJING UNIV OF INFORMATION SCI & TECH
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