528 results about "Scan electron microscopy" patented technology

A ternary polycrystalline positive electrode material is a secondary ball formed by agglomerating primary particles, the secondary ball is equally divided into four parts in the direction from the center to the surface of the secondary ball, the four parts are an inner core layer, a first middle layer, a second middle layer and a shell layer, and the section of the ternary polycrystalline positive electrode material is observed through a scanning electron microscope. The porosity is sequentially reduced from inside to outside. The preparation method comprises the following steps: mixing a positive electrode material precursor, a lithium source and a Li-containing polyanion compound, and sintering at a high temperature to obtain a primary sintered matrix; and washing and drying the primary sintering substrate, mixing the primary sintering substrate with a coating agent, and sintering to obtain the ternary polycrystalline positive electrode material. The invention also discloses a lithium ion battery. The porosity of the section of the positive electrode material is sequentially reduced from inside to outside, so that the positive electrode material can be in more sufficient contact with an electrolyte, more diffusion paths are formed, the transmission obstruction of lithium ions is reduced, and the transmission rate of the lithium ions is effectively improved, so that the discharge performance of the positive electrode material is improved, and the cycle performance of the material is improved.

The invention discloses a scanning electron microscope. The scanning electron microscope comprises a scanning electron microscope main body and a sample table located in a sample cavity, the scanning electron microscope main body is fixedly connected with the upper cover of the sample cavity, so that a closed space is formed in the sample cavity; a closed-loop groove is formed in an upper cover of the sample cavity; wherein the groove is located outside the connection position of the upper cover of the sample cavity and the scanning electron microscope main body, and the bottom of the groove is not higher than the supporting surface of the sample table; a magnetic shielding layer is arranged in the groove; wherein the length of the magnetic shielding layer is not less than the distance from the objective lens of the scanning electron microscope main body to the supporting surface of the sample stage.

The invention provides a simulation image generation method for simulating a scanning electron microscope and related equipment, and the method comprises the steps: constructing a first imaging feature mapping table and a second imaging feature mapping table based on the scanning electron microscope image data of a real wafer; respectively making a standard imaging script and a defect imaging script based on the two imaging feature mapping tables; obtaining a wafer three-dimensional model and analyzing associated process attribute information in each structural unit; determining a corresponding standard imaging script based on the process attribute information, and performing surface characteristic adjustment on the structural unit to generate a defect-free simulation model; determining a corresponding defect imaging script according to a preset defect introduction condition, and adding a defect on a specified structural unit to generate a simulation model with a defect; and finally, generating a simulation image for simulating the scanning electron microscope. High-simulation scanning electron microscope images are manufactured in batches through a virtual simulation means, and the diversity and coverage of a simulation image data set are improved.

The invention discloses a multi-scale performance evaluation and optimization method and device for well cementation cement stone, and relates to the technical field of oil exploitation, the well cementation cement stone is subjected to nanoindentation test and scanning electron microscope microstructure test, and a mechanical property-microstructure test result is obtained; performing electronic computer tomography and mercury injection test on the well cementation cement stone, and constructing a pore network three-dimensional model; performing triaxial mechanical property test, thermogravimetric analysis and thermal expansion test on the well cementation cement stone to obtain a thermal-mechanical coupling test result; performing X-ray diffraction and X-ray fluorescence spectrum analysis on the well cementation cement stone to obtain mineral phase information and element information of the cement stone; according to the method, a mechanical property-microstructure test result, topological parameters, a thermal-mechanical coupling test result, cement stone mineral phase information and element information are fused, an optimal design scheme for target well conditions is generated, multi-dimensional performance testing and characterization are achieved, and an accurate basis is provided for well cementation cement stone optimal design and quality control.

Provided is a pattern inspection system, including a scanning electron microscope (SEM) including an electron gun configured to generate a first electron beam and emit the generated first electron beam toward a first wafer, a detector configured to detect electrons emitted from the first wafer based on the first electron beam emitted toward the first wafer, and at least one processor configured to generate a first SEM image including a plurality of pixels based on the detected electrons, and determine, based on a period of a pattern extracted from the first SEM image, a pixel size of a second SEM image to be generated by the SEM with respect to a second wafer.

The invention provides a semiconductor wafer surface detection method and device and a scanning electron microscope, and the method comprises the steps: collecting a to-be-detected wafer surface two-dimensional image through the scanning electron microscope, inputting the to-be-detected wafer surface two-dimensional image into a surface detection model, determining a wafer surface three-dimensional image related to the to-be-detected wafer surface two-dimensional image, identifying and outputting wafer surface parameters of the wafer surface three-dimensional image; the surface detection model is obtained by pre-training a wafer surface parameter sample and a sample pair associated with a wafer surface two-dimensional image sample and a wafer surface three-dimensional image sample, and the wafer surface two-dimensional image sample is obtained by scanning a wafer sample through a scanning electron microscope; the wafer surface three-dimensional image sample is obtained by scanning the same wafer sample through three-dimensional detection equipment, and the wafer surface three-dimensional image sample is bound with wafer surface parameters. Compared with a pure two-dimensional image of the wafer surface, the accuracy of surface data detection is improved while the detection speed is ensured.

The invention discloses a micro-positive pressure hydrogen environment in-situ stress-strain testing device and method. The device comprises a sealed reaction cavity which can be placed in a scanning electron microscope sample cabin; the loading device is arranged in the cavity and is used for fixing and applying a load; the atmosphere control system is communicated with the cavity and is used for introducing gas and maintaining a micro-positive pressure state; an electron transmission window arranged on the cavity, wherein an electronic transparent film packaged by the electron transmission window can maintain air tightness under micro-positive pressure and allows electron beams to penetrate through; and the heating module is arranged in the cavity. The method comprises the following steps: loading and sealing a sample, establishing a micro-positive pressure atmosphere, heating the sample, starting loading, and synchronously carrying out SEM real-time imaging and data recording. The problem that a traditional SEM in-situ device cannot work in a real micro-positive pressure hydrogen and high-temperature environment is solved, and synchronous visual in-situ observation of material microstructure evolution and macromechanical response under the gas-heat-force multi-physics field coupling condition is achieved.

The invention provides a fuzzy knowledge graph construction method related to a wafer manufacturing process, and relates to the technical field of fuzzy knowledge graphs, and the method comprises the steps: employing a three-dimensional convolutional network to extract a spatial defect feature X of a scanning electron microscope image, carrying out the coding of sensor time series data through a bidirectional LSTM, and obtaining a feature set Y, obtaining electrical performance parameters of the wafer based on impedance spectroscopy analysis from the text to obtain a feature set Z; building fuzzy knowledge based on the text to reinforce the feature sets X, Y and Z, building a fuzzy feature set and a time sequence feature set, building a weighted scoring model, and screening a candidate set from the text according to the weighted scoring model; information is extracted from the candidate set, and a tetrad structure G = (entities, relationships, time attributes and fuzzy rules) is constructed; and taking G as input, generating a time sequence fuzzy rule through a recursive reconstruction contribution method, and incrementally updating the knowledge graph. According to the method, the characterization bottleneck of space-time coupling and uncertainty correlation in a traditional method is broken through.

The invention relates to the technical field of nickel-based superalloy grain segmentation and extraction, in particular to a nickel-based superalloy grain segmentation and extraction method based on a VGG and U-Net fusion model. The method comprises the following steps: preparing an Inconel 740H high-temperature alloy sample; carrying out an in-situ tensile experiment according to the manufactured sample, and observing the microstructure by using a scanning electron microscope in the experiment process; acquiring image data according to different stages of the experiment; performing data enhancement on the acquired image according to the brightness contrast; marking according to the characteristics of the crystal grains to be segmented; obtaining a reference image data set according to the annotation file; performing normalization processing according to the reference image data set to obtain a data set; designing a feature extraction module according to the VGG network model; designing a feature fusion module according to the U-Net network model; carrying out fusion according to the two designed modules to obtain a V-Unet fusion model; designing a loss function according to gray information and structural information of the grain boundary area of the reference image grain relative to other areas, and obtaining a loss function weight of the grain boundary area of the reference image grain; calculating according to the weight of the loss function to obtain model feedback; training according to the V-Unet fusion model to obtain a model; carrying out grain segmentation extraction on an Inconel 740H high-temperature alloy scanning electron microscope image according to the model; performing morphological post-processing according to a segmentation extraction result to obtain a grain image result; and performing statistics and data analysis according to a grain image result. The method can be used for segmenting, extracting and counting the same type of grains at different positions of the nickel-based superalloy and refining the grains to improve the mechanical property of the superalloy, and has great significance.

4, 4 '-bipyridine (Bpy), 2, 5-thiophenedicarboxylic acid (Tdc), FeCl3. 6H2O, NiCl2. 6H2O, urea and tetrabutylammonium bromide are used as raw materials, a simple hydrothermal-calcination method is adopted to prepare the Fe2O3-coated Ni-MOF composite nanomaterial catalyst, X-ray diffraction (XRD), a scanning electron microscope (SEM) and a N2 adsorption and desorption technology are adopted to characterize a prepared sample, and the electro-catalytic oxygen evolution reaction (OER) activity of the Fe2O3-coated Ni-MOF composite nanomaterial catalyst is tested. Results show that compared with a single component, the activity of the composite nano-material catalyst is greatly improved, especially the composition-optimized Fe2O3-coated Ni-MOF-1 composite nano-material catalyst shows the highest catalytic activity, the composite nano-material catalyst catalyzes OER in 1M KOH, and the overpotential (eta 10) is only 330mV when the current density is 10mA / cm < 2 > and is close to the overpotential 291mV of a noble metal catalyst RuO2.

The present invention relates to a colloidal composition comprising unmodified, discrete cellulose microparticles, such as a colloidal emulsion or colloidal gel, a method of preparing the colloidal composition and uses of the colloidal composition and cellulose particles The colloidal composition comprises a continuous phase and a dispersed phase, wherein the continuous phase is a liquid; wherein the dispersed phase comprises cellulose microparticles which are dispersed in the continuous phase of the colloidal composition, wherein the cellulose microparticles have a mean average particle length of from 0.1 to 20 µm a mean average particle width from 0.05 to 1.3 µm, and a maximum thickness not exceeding 0.2 µm determined by scanning electron microscopy; and an aspect ratio of length / width of 1 to 25, and wherein the colloidal composition has a flow index n of ≤ 1 determined by a rheometer at NTP (normal temperature (25°C) and pressure (1 atm)).

Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

The invention discloses a five-axis sample stage applied to a scanning electron microscope, and belongs to the technical field of electron microscopes. The sample table comprises a Z-axis movement mechanism, a T-axis rotation mechanism, an X-axis movement mechanism, a Y-axis movement mechanism, an R-axis rotation mechanism and a sample table body. All the shafts achieve precise linear or rotary motion through crossed roller guide rails, vacuum motors are adopted for driving, a grating ruler, a travel switch and a limiting block are matched to guarantee positioning precision and motion limiting, and finally five-axis linkage of X-axis and Y-axis orthogonal linear motion, Z-axis vertical lifting, T-axis inclination and R-axis 360-degree rotation is achieved. The device has the advantages of multi-degree-of-freedom omnibearing observation, high-precision positioning, high stability of a vacuum environment, improvement of operation efficiency and the like, can meet the requirements of a scanning electron microscope on multi-angle and high-precision observation of a sample, and is suitable for micro-topography analysis in the fields of material science, electronic manufacturing and the like.

The invention belongs to the technical field of semiconductor material detection, and particularly relates to a method for representing micro-defects of a near-perfect czochralski silicon wafer by regulating and controlling near-surface copper concentration. The invention discloses a method for representing micro-defects of a near-perfect czochralski silicon wafer by regulating and controlling the concentration of near-surface copper. The method specifically comprises the following steps: (S.1) cleaning the silicon wafer and immersing the silicon wafer into a copper nitrate solution for standing; (S.2) rinsing the silicon wafer with ionized water, taking out the silicon wafer and airing the silicon wafer; (S.3) performing high-temperature heat treatment on the silicon wafer for a period of time, and quickly cooling; (S.4) carrying out chemical polishing on the cooled silicon wafer; (S.5) horizontally placing the silicon wafer in the corrosive liquid; and (S.6) observing the surface of the silicon wafer by using an optical microscope or a scanning electron microscope so as to display the microdefects. According to the invention, copper precipitates at different depths are observed after copper is introduced at high temperature, so that the microdefect condition of the silicon wafer can be reflected. The method can clearly display the micro-defects in the nearly perfect czochralski silicon wafer, and has high detection efficiency and accuracy. The method is easy to operate, low in cost and suitable for silicon wafer microdefect detection in large-scale production.

The disclosure relates to air transfer free of solid state batteries and electrical testing of solid state batteries in scanning electron microscopes. In one embodiment, an apparatus includes a sample stage including a base member and a sample support assembly coupled to the base member, where the sample support assembly includes a bracket having opposing first and second bracket portions, the first holder portion and the second holder portion are configured to compress a sample within the holder receiving portion, wherein the base member is configured to engage a sample stage within a microscope chamber. A method includes securing a sample stage in a microscope chamber and charging and / or discharging the sample at least partially through an electrical coupling in the chamber.

The present invention relates to the technical field of the preparation of Cr3+-doped fluorescent materials. Disclosed are the preparation of a Cr3+-doped fluorescent material and the use thereof in a plant light supplement lamp. The preparation comprises the following steps: weighing a matrix raw material and a Cr3+-containing raw material according to the stoichiometric ratio, and respectively grinding and then storing same in a dryer; placing the raw materials into a ball milling tank, and subjecting same to planetary ball milling for 3-6 hours; transferring same to an alumina crucible, and pre-sintering same for 2-5 hours; after secondary ball milling, adding a fluxing agent thereto; placing same in a high-temperature furnace and sintering same for 6-10 hours, and furnace cooling same or cooling same under the protection of an inert gas; and firstly coarsely crushing same, then grinding same to 10-30 μm, alternately cleaning same with deionized water and ethanol, drying same in an air dry oven, detecting and screening the product by using a fluorescence spectrophotometer, an X-ray diffractometer and a scanning electron microscope, and remanufacturing unqualified products after adjusting process parameters according to detection results. The present invention has a high light-emitting efficiency, and the spectrum thereof is suitable for plant photosynthetic absorption. When being applied to a light-supplementing lamp, plant growth can be promoted, the plant height and the chlorophyll content are significantly increased, and the natural spectrum is simulated, such that the material is suitable for multiple cultivation scenarios.

The invention provides a steel surface defect online detection method, device and system and a storage medium, and relates to the technical field of defect detection. The method comprises the following steps: acquiring a preset reference spot map; wherein the reference spot map is obtained by establishing a coordinate system for a first aluminum nitride spot image on the surface of a defect-free steel sample under a scanning electron microscope; after the target steel leaves the annealing furnace, generating raised aluminum nitride spots on the surface of the target steel through a pulse nitriding process by utilizing the residual temperature of the target steel; collecting a second aluminum nitride spot image on the surface of the target steel, converting the second aluminum nitride spot image into the coordinate system, and generating an online spot map; and taking the reference spot map as priori knowledge of a pre-trained defect identification model, inputting the online spot map into the defect identification model, and identifying the defect of the target steel. According to the invention, the interference of the steel surface condition and the image quality can be overcome, and the online detection accuracy and efficiency of the steel are improved.

The invention relates to the technical field of machining, and discloses a single-crystal high-temperature alloy grinding machining plastic deformation layer thickness identification method and system, and the method comprises the steps: collecting a port section image through the high-resolution imaging capability of a scanning electron microscope, and carrying out the preprocessing of the collected image, utilizing a Canny edge detection algorithm to accurately identify edge information in the image; performing crystal edge frame identification by using a Hough LinesP rectangular detection algorithm to calculate the crystal direction angle of each crystal in the image to distinguish the crystals in an undeformed area and a deformed area and the maximum depth value of the crystals in the corresponding area, and combining a preset crystal angle identification threshold value in a plastic deformation area after the single crystal high-temperature alloy material is ground and processed to identify the crystal edge frame of the single crystal high-temperature alloy material. And obtaining the thickness value of the plastic deformation area after the single-crystal high-temperature alloy material is ground. According to the method, the thickness value of the plastic deformation area of the ground single-crystal high-temperature alloy material can be accurately analyzed, and powerful technical support is provided for control and optimization of material machining quality.

The invention discloses a scanning electron microscope system and a degaussing debugging method. The scanning electron microscope system comprises a scanning electron microscope main body, an active degaussing system and a sample table located in a sample cavity, the scanning electron microscope main body is fixedly connected with the upper cover of the sample cavity, so that a closed space is formed in the sample cavity; a closed-loop groove is formed in an upper cover of the sample cavity; wherein the groove is located outside the connection position of the upper cover of the sample cavity and the scanning electron microscope main body, and the bottom of the groove is not higher than the supporting surface of the sample table; a probe of the active degaussing system is arranged in the groove and is positioned in a height range between an objective lens of the scanning electron microscope main body and the supporting surface of the sample table.

The invention provides a scanning electron microscope objective lens system and a detection method, and relates to the technical field of scanning electron microscopes. The magnetic lens device is used for focusing an incident electron beam; the deflection device, the anastigmator, the Wien analyzer group and the detection device are all located in an accommodating space in the magnetic lens device; the deflection device, the anastigmator and the Wien analyzer group are arranged along the optical axis of the incident electron beam and are arranged around the optical axis; the deflection device and the anastigmator are respectively used for adjusting the movement direction and shape of the incident electron beam so as to scan a to-be-tested sample through the incident electron beam, so that the to-be-tested sample generates signal electrons; the Wien analyzer group is used for adjusting the movement direction of the signal electrons to enable the signal electrons to enter the detection device; the detection device is located on the side, close to the magnetic lens device, of the deflection device, the anastigmator and the Wien analyzer set and used for generating a detection signal according to the signal electrons and achieving surface imaging of the to-be-detected sample. The imaging precision and the detection efficiency of the objective lens system are improved.

The utility model discloses a multidimensional sample stage for a scanning electron microscope, which comprises a sample stage and a fixing device, a motor is arranged on the fixing device, an output shaft of the motor is fixedly connected to a central shaft of the sample stage, and the motor is used for driving the sample stage to rotate around the central shaft of the sample stage. The sample table is of a polyhedral structure, and a plurality of samples are respectively fixed on a plurality of surfaces of the sample table. The function of detecting a plurality of samples through one-time sample injection can be realized, so that the problem of low detection efficiency in the prior art is solved.

The invention discloses a method and a system for constructing an intelligent typing diagnosis model of psoriasis. The method comprises the following steps: S1, collecting pairing multi-modal data of a psoriasis patient whose fingernails are not tired, wherein the pairing multi-modal data comprises clinical information, scanning electron microscope images of fingernail surface morphology and infrared spectrum data of fingernail protein; s2, constructing a clinical feature encoder; s3, constructing a spectral feature encoder; s4, constructing an image feature encoder; s5, constructing a hierarchical fusion module; and S6, three loss function components are constructed, multi-objective optimization of the model is realized, and a total loss function is adopted to carry out model training. According to the method, the clinical information, the scanning electron microscope image of the nail surface morphology and the infrared spectrum data of the nail protein are integrated, and the multi-mode deep learning technology is combined, so that early recognition and prediction of psoriatic arthritis in a psoriasis patient are realized.

A method includes extracting first feature data by applying a backbone network of a machine learning model to a layout image representing a design for a target pattern, applying a hotspot segmentation network of the machine learning model to the first feature data, the hotspot segmentation network configured to generate a hotspot map representing a hotspot area of the layout image corresponding to a fault, obtaining, from the hotspot segmentation network, second feature data, and generating a scanning electron microscope (SEM) image of a wafer by applying an SEM image generation network of the machine learning model to the first feature data and the second feature data.

The invention relates to the technical field of carbon sequestration geological engineering, and particularly discloses a CO2 water rock reaction induced permeability change evaluation method based on machine learning, which comprises the following steps: firstly, acquiring multi-focal plane image data of a reacted sample on a scanning electron microscope platform; automatically identifying a reaction area by using the trained U-Net instance model, and obtaining porosity and specific surface area information; corresponding calculation coefficients are automatically selected and matched based on the area-depth information of the corrosion holes, normalization calculation is carried out, and the permeability and the spatial distribution of the permeability are directly output. According to the method, destructive detection is not needed, quantitative characterization of the rock permeability physical property is achieved, the analysis accuracy and efficiency are remarkably improved, batch processing statistics is supported, and reliable data support is provided for carbon sequestration safety research and sequestration simulation.

The invention discloses a method for rapidly representing a filling area of an embedded boron nitride nanotube and application. The method comprises the steps that an observation sample is prepared, the observation sample comprises a single dispersed embedded boron nitride nanotube, and the embedded boron nitride nanotube comprises a boron nitride nanotube and an embedded object in a tube cavity; a scanning electron microscope is utilized, 5-7 kV acceleration voltage is adopted for imaging the observation sample to obtain an observation image, and in the observation image, the gray level of the filling area of the embedded object is different from the gray level of the unfilled lumen area. According to the method, the scanning electron microscope is utilized, and specific condition parameters are set to confirm the filler embedded with the boron nitride nanotubes, so that a clear image of the filling object in the lumen is obtained, and information such as the length, the diameter and the position of the filling object can be intuitively expressed; the testing method is short in time, low in price, simple to operate and small in damage to samples.

The invention relates to the technical field of electronic scanning imaging, in particular to a scanning electron microscope and an electron optical structure thereof. According to the scheme, the anode of the electron gun is arranged behind the focusing lens and in front of the scanning coil, and the acceleration structure is arranged between the cathode and the anode, so that the acceleration structure is connected with the power supply during application, the acceleration structure is used as the acceleration electrode, and electrons can be accelerated between the cathode and the acceleration electrode after being emitted from the cathode, so that the acceleration effect is improved. The electron optical structure is arranged between the accelerating electrode and the anode, the electron decelerates between the accelerating electrode and the anode, high energy is kept in the accelerating structure, it is guaranteed that electrons are kept at a high speed in the propagation process, and unexpected deflection of the electrons in the electron optical structure is reduced; therefore, the electron beam falling on the surface of the sample has relatively low energy, so that the anti-interference performance of the electron beam in the propagation process can be ensured, and the low-voltage imaging of the electron beam on the surface of the sample can also be ensured.

To provide a toner that offers excellent low-temperature fixation while simultaneously achieving both filming resistance in high-temperature, high-humidity environments and release properties during fixation. [Solution] A toner containing toner particles that include a polyester resin, an aromatic petroleum resin, and a mold release agent, A toner characterized in that, when the cross-section of the toner particles is observed with a scanning electron microscope, the domains of the release agent satisfy the following requirements. (Requirements) Each toner particle contains, on average, 2 to 8 release agent domains with a major axis of 400 nm or more and an aspect ratio of 0.7 or less calculated by the following formula (1). Aspect ratio = (Short diameter of release agent domain) / (Long diameter of release agent domain) Equation (1)

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

The invention discloses a method for measuring the thickness of a semiconductor epitaxial structure, and relates to the technical field of semiconductor laser detection. According to the method, a clean, flat and pollution-free epitaxial end face is obtained through scribing cleavage or cutting or fracture treatment, the end face is corroded by adopting components containing acid, oxide and the like, and due to the fact that the components or doping concentrations of epitaxial layers are different, the rates of chemical reactions between the epitaxial layers and a mixed solution are different; finally, the end face of the epitaxial layer corroded by the mixed solution is in a stepped shape under a scanning electron microscope, and the boundary of each epitaxial layer can be obviously distinguished through the shape, so that the thickness of each epitaxial layer is accurately measured, the problems of complicated operation, high cost, low efficiency and insufficient structural analysis capability in the prior art are solved, and the measurement accuracy is improved. And an efficient and accurate solution is provided for measuring the thickness of the epitaxial layer.

The application provides a method for observing glandular hairs of Ainsliaea sinensis by using a scanning electron microscope. The method comprises the following steps: (1) selecting a region to be measured in a leaf blade, cutting a sample, and immersing the sample in an aldehyde fixing solution for fixation and immersion; (2) performing gradient dehydration by using an ethanol solution, performing replacement by using isopentyl acetate, and then performing drying by using a critical point drying instrument; (3) removing non-glandular hairs by using adhesive tape; and (4) then spraying gold and observing under a scanning electron microscope. By using the method, the observation and distribution density statistics of the glandular hairs of Ainsliaea sinensis can be simply, efficiently and accurately completed. By using the method, the problem of uneven leaf blade is well solved, and the problem of non-glandular hairs shielding and interfering with the visual field is completely solved.