Preparation method and use method of polishing solution for silicon carbide

A polishing liquid, silicon carbide technology, applied in polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of long processing time, scratches, unsuitable for industrial production, etc.

Inactive Publication Date: 2011-07-20
苏州天科合达蓝光半导体有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional chemical mechanical polishing fluid generally uses silica polishing fluid directly. Its disadvantages are low removal rate and very long processing time. In actual production, it is always easy to cause a large number of scratches on the surface of the workpiece, which is not suitable for use with Industrial production

Method used

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  • Preparation method and use method of polishing solution for silicon carbide
  • Preparation method and use method of polishing solution for silicon carbide
  • Preparation method and use method of polishing solution for silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Step 1: Configure Polishing Fluid

[0019] (1) Mix reagent pure (or above) potassium hydroxide and potassium pyrophosphate in deionized water according to the mass ratio of the three as 5:1:200, and stir evenly to obtain a pH regulator;

[0020] (2) Mix hydrogen peroxide and deionized water at a ratio of 4:1 by volume, and stir evenly to obtain an auxiliary oxidizing agent. The stirring speed does not exceed 100 rpm.

[0021] (3) Mix the auxiliary oxidizing agent and the silicon dioxide polishing liquid according to the ratio of volume percentage of 1:2 and stir to obtain the intermediate evenly, and the stirring speed does not exceed 100 rpm.

[0022] (4) Mix the pH regulator into the intermediate, and adjust the pH to 9-10 (9.3) and the stirring speed does not exceed 100rpm

[0023] Step Two: Use

[0024] Adjust the temperature of the polishing disc to be controlled at a constant temperature of 10 degrees Celsius, and use a peristaltic pump to flow and supply the po...

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Abstract

The invention provides polishing solution used on the surface of the high quality polished silicon carbide wafer, a preparation method of the polishing solution and a use method of the polishing solution. The polishing solution is prepared from deionized water, silica polishing solution, auxiliary oxidant and pH regulator. The polishing solution prepared by the method is odorless, has state and no precipitate and can be dispersed evenly and properly recycled; when the polishing solution is used to process the wafer, the removal rate is high; the processed silicon carbide wafer is brighter; the wafer has no unnoticeable scratches and is smooth and uniform when observed by a microscope with 50 fold magnification; and the surface roughness can reach nanometer level stably through the detection of an atomic force microscope. The cycle count of the polishing solution can be adjusted by changing the amounts of the added auxiliary oxidant and pH regulator or the ratio of the auxiliary oxidant and the pH regulator.

Description

technical field [0001] The invention relates to a polishing liquid for silicon carbide and a preparation method thereof. The polishing liquid can be used for chemical mechanical polishing, in particular to a polishing liquid for obtaining high-quality silicon carbide wafers and a preparation method thereof. Background technique [0002] Wide bandgap semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) are the third-generation semiconductors after silicon (Si) and gallium arsenide (GaAs). Compared with Si and GaAs traditional semiconductor materials, SiC has excellent properties such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, and has great potential in high temperature, high frequency, high power and radiation resistant devices. Application prospect. In addition, silicon carbide, as a substrate material for epitaxial growth of other semiconductor thin films or cry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/304
Inventor 张贺陈小龙黄青松王锡铭
Owner 苏州天科合达蓝光半导体有限公司
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