Periodic band domain structure analysis method of ferroelectric ceramic

A technology of ferroelectric ceramics and analysis methods, which is applied in instruments, scanning probe technology, scanning probe microscopy, etc. problem, to achieve the effect of large polarization value and good ferroelectricity

Pending Publication Date: 2021-06-25
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Even for rhombohedral ferroelectric films grown on 001-type cubic surfaces, domain structure analysis is quite complicated due to the existence of 8 possible polarization directions; for ceramics, on the one hand, non-epitaxial

Method used

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  • Periodic band domain structure analysis method of ferroelectric ceramic
  • Periodic band domain structure analysis method of ferroelectric ceramic
  • Periodic band domain structure analysis method of ferroelectric ceramic

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0043] Example 1

[0044] Below, combined Figure 2-6 , In detail the embodiment.

[0045] (1) In accordance with step S2, the surface of the ceramic sample, please refer to Figure 2-3 .

[0046] Typically the ferroelectricity of the thin film can be detected by the ferroelectric return line, but if the ferroelectric return in the ultra-thin film or the ceramic sheet is difficult to test, the inversion characteristics of the sample surface local area and ferroelectric properties can be detected by piezoelectric retraction. The PFM tip is fixed to a point surface, and the piezoelectric signal is applied while applying a DC bias, and the applied voltage is from -10V to +10V. Given that the ceramic is polycrystalline sample, there is a grain boundary, we test in multiple regions, give two typical situations, see figure 2 .

[0047] figure 2 : PFM piezoelectric retinal map of ceramic samples. The above PFM amplitude shows the size of the polarization strength, because the butterfly is...

Example Embodiment

[0057] Example 2

[0058] Below, combined Figure 7 Describe this embodiment.

[0059] Figure 7 : (AD) is a vector PFM characterization result of 0 ° string domain, respectively, for the surface PFM amplitude (a) and phase (b), in-plane PFM amplitude (C) and phase (d); (EH) as ceramic samples The vector PFM characterization of the rotation of 90 ° rear strip is specified, respectively, which is the surface PFM amplitude (E) and phase (f), in-plane PFM amplitude (G), and phase (h), reverse the image counterclockwise It is convenient to compare with 0 ° results. The ceramic sample topography is given in (i), it can be seen that the surface of the ceramic sample is smooth and flat. The bright and dark phase lining in (b) can determine that the polarization is both upward and downward distribution, excluding 71 ° domain, may be 109 ° or 180 ° domain, which can be determined by the shade of the darkness in (d). The polarization is existing to the left, and the 180 ° domain is excluded,...

Example Embodiment

[0060] Example 3

[0061] Below, combined Figure 8 Describe this embodiment.

[0062] Figure 8 : (AD) is a vector PFM characterization result of 0 ° string domain, respectively, for the surface PFM amplitude (a) and phase (b), in-plane PFM amplitude (C) and phase (d); (EH) as ceramic samples The vector PFM characterization of the rotation of 90 ° rear strip is specified, respectively, which is the surface PFM amplitude (E) and phase (f), in-plane PFM amplitude (G), and phase (h), reverse the image counterclockwise It is convenient to compare with 0 ° results. The ceramic sample topography is given in (i), it can be seen that the surface of the ceramic sample is smooth and flat. The bright and dark phase lining in (b) can determine that the polarization is both upward and downward distribution, excluding 71 ° domain, may be 109 ° or 180 ° domain, which can be determined by the shade of the darkness in (d). The polarization is existing to the left, and the 180 ° domain is excluded,...

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Abstract

The invention discloses a periodic band domain structure analysis method for ferroelectric ceramic and belongs to the technical field of micro-nano characterization. The method comprises the following steps of preparing bismuth ferrite ceramic by using a high-voltage high-voltage method, cutting into slices (plates), polishing, and characterizing the morphology of the bismuth ferrite ceramic by using an atomic force microscope; a periodic band domain in the nano ferroelectric ceramic is represented by using a vector piezoelectric force microscope, and a three-dimensional domain structure of the nano ferroelectric ceramic is determined by using a fine vector piezoelectric force microscopy analysis method. The ferroelectric ceramic preparation method provided by the invention can be used for a non-volatile and high-density ferroelectric random access memory; and meanwhile, the provided characterization method can accurately give a three-dimensional domain structure of a periodic band domain, a method for identifying the polarization flip type in the ceramic sample is provided, and a scheme is provided for development and characterization detection of a high-density ferroelectric memory device. preparation process development and batch production of the bismuth ferrite ceramic with the periodic domain structure are promoted.

Description

technical field [0001] The invention relates to the technical field of micro-nano characterization, in particular to a method for analyzing the periodic strip domain structure of ferroelectric ceramics. Background technique [0002] Ferroelectric random access memory has the advantages of low energy consumption, fast writing, and much larger erasing times, and is expected to become the next generation of non-volatile memory. Ferroelectric storage requires ferroelectric materials to have a large polarization value and strong piezoelectric response at room temperature, which is conducive to the development and detection of devices based on ferroelectric materials. Among them, bismuth ferrite (BiFeO 3 , abbreviated as BFO) the Curie temperature and Neel temperature of this material are 370°C and 830°C, respectively, and the remanent polarization values ​​in the (111) and (001) directions are 100μC / cm 2 and 60μC / cm 2 , is a very good ferroelectric and piezoelectric material; ...

Claims

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Application Information

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IPC IPC(8): G01Q60/24C04B35/26C04B35/622
CPCG01Q60/24C04B35/26C04B35/622C04B2235/3298
Inventor 李忠文陈永山申慧王延宗张正中王超
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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