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Periodic band domain structure analysis method of ferroelectric ceramic

A technology of ferroelectric ceramics and analysis methods, which is applied in instruments, scanning probe technology, scanning probe microscopy, etc. problem, to achieve the effect of large polarization value and good ferroelectricity

Pending Publication Date: 2021-06-25
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Even for rhombohedral ferroelectric films grown on 001-type cubic surfaces, domain structure analysis is quite complicated due to the existence of 8 possible polarization directions; for ceramics, on the one hand, non-epitaxial growth exists in polycrystalline form, on the other hand It is a bulk material with a large thickness, and it is difficult to accurately determine its ferroelectric domain structure because the polarization cannot be reversed.

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  • Periodic band domain structure analysis method of ferroelectric ceramic
  • Periodic band domain structure analysis method of ferroelectric ceramic
  • Periodic band domain structure analysis method of ferroelectric ceramic

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0044] Below, combine Figure 2-6 , describe this embodiment in detail.

[0045] (1) According to step S2, the phase characterization of ceramic samples, please refer to Figure 2-3 .

[0046] Generally, the ferroelectricity of thin films can be detected by ferroelectric loops, but if it is difficult to test ferroelectric loops in ultra-thin films or ceramic sheets, piezoelectric loops can be used to detect the local inversion characteristics and ferroelectric properties of the sample surface. The PFM needle tip is fixed at a point on the sample surface, and the piezoelectric signal is recorded while applying a DC bias voltage, and the applied voltage is in the range of -10V to +10V. In view of the fact that ceramics are polycrystalline samples with grain boundaries, we conduct tests in multiple regions and give two typical situations, see figure 2 .

[0047] figure 2 : PFM piezoelectric loop diagram of a ceramic sample. The PFM amplitude diagram above shows the magnit...

Embodiment 2

[0058] Below, combine Figure 7 , to illustrate this embodiment.

[0059] Figure 7 : (a-d) are vector PFM characterization results of 0° strip domain, which are out-of-plane PFM amplitude (a) and phase (b), in-plane PFM amplitude (c) and phase (d); (e-h) are ceramic samples The vector PFM characterization results of the stripe domain after rotating clockwise by 90°, which are out-of-plane PFM amplitude (e) and phase (f), in-plane PFM amplitude (g) and phase (h), respectively, and the image is rotated counterclockwise , which is convenient for comparative analysis with the 0° result. The morphology of the ceramic sample is given in (i), and it can be seen that the surface of the ceramic sample is smooth and flat. From the light-dark contrast in (b), it can be determined that the polarization has both upward and downward distributions, excluding the 71° domain, it may be a 109° or 180° domain, which can be determined from the light-dark contrast in (d) The polarization has ...

Embodiment 3

[0061] Below, combine Figure 8 , to illustrate this embodiment.

[0062] Figure 8 : (a-d) are vector PFM characterization results of 0° strip domain, which are out-of-plane PFM amplitude (a) and phase (b), in-plane PFM amplitude (c) and phase (d); (e-h) are ceramic samples The vector PFM characterization results of the stripe domain after rotating clockwise by 90°, which are out-of-plane PFM amplitude (e) and phase (f), in-plane PFM amplitude (g) and phase (h), respectively, and the image is rotated counterclockwise , which is convenient for comparative analysis with the 0° result. The morphology of the ceramic sample is given in (i), and it can be seen that the surface of the ceramic sample is smooth and flat. From the light-dark contrast in (b), it can be determined that the polarization has both upward and downward distributions, excluding the 71° domain, it may be a 109° or 180° domain, which can be determined from the light-dark contrast in (d) The polarization has ...

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Abstract

The invention discloses a periodic band domain structure analysis method for ferroelectric ceramic and belongs to the technical field of micro-nano characterization. The method comprises the following steps of preparing bismuth ferrite ceramic by using a high-voltage high-voltage method, cutting into slices (plates), polishing, and characterizing the morphology of the bismuth ferrite ceramic by using an atomic force microscope; a periodic band domain in the nano ferroelectric ceramic is represented by using a vector piezoelectric force microscope, and a three-dimensional domain structure of the nano ferroelectric ceramic is determined by using a fine vector piezoelectric force microscopy analysis method. The ferroelectric ceramic preparation method provided by the invention can be used for a non-volatile and high-density ferroelectric random access memory; and meanwhile, the provided characterization method can accurately give a three-dimensional domain structure of a periodic band domain, a method for identifying the polarization flip type in the ceramic sample is provided, and a scheme is provided for development and characterization detection of a high-density ferroelectric memory device. preparation process development and batch production of the bismuth ferrite ceramic with the periodic domain structure are promoted.

Description

technical field [0001] The invention relates to the technical field of micro-nano characterization, in particular to a method for analyzing the periodic strip domain structure of ferroelectric ceramics. Background technique [0002] Ferroelectric random access memory has the advantages of low energy consumption, fast writing, and much larger erasing times, and is expected to become the next generation of non-volatile memory. Ferroelectric storage requires ferroelectric materials to have a large polarization value and strong piezoelectric response at room temperature, which is conducive to the development and detection of devices based on ferroelectric materials. Among them, bismuth ferrite (BiFeO 3 , abbreviated as BFO) the Curie temperature and Neel temperature of this material are 370°C and 830°C, respectively, and the remanent polarization values ​​in the (111) and (001) directions are 100μC / cm 2 and 60μC / cm 2 , is a very good ferroelectric and piezoelectric material; ...

Claims

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Application Information

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IPC IPC(8): G01Q60/24C04B35/26C04B35/622
CPCG01Q60/24C04B35/26C04B35/622C04B2235/3298
Inventor 李忠文陈永山申慧王延宗张正中王超
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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