Characterization method for conductivity regulation in ferroelectric nano dot array

Abstract

The invention discloses a characterization method for conductivity regulation in a ferroelectric nano dot array, and belongs to the technical field of nano ferroelectric material preparation and micro-nano characterization. A ferroelectric film is etched by an ion beam to obtain a high-density nano dot array; a domain structure of a ferroelectric topological domain is obtained by means of vector piezoelectric power microscopy characterization; a conductive atomic force microscope is used for observing conductive channels in the nanodots, that the conductive area in a single nanodot is dozens of nanometers according to a two-dimensional current image, and the conductive channels have the characteristic similar to metal conductivity; and a piezoelectric force microscope and a conductive atomic force microscope are combined to obtain regulation of polarization on conductivity. The method can be used for developing a nonvolatile and high-density ferroelectric random access memory; the central domain structure of the nanodot provides a scheme for researching the ferroelectric topological domain and a topological material; and the conductivity of the nanodots can be regulated through polarization inversion, regulation control can be visualized through the provided characterization method, and the visibility and reliability of data are improved.

Description

technical field [0001] The invention belongs to the technical field of nano ferroelectric material preparation and micro-nano characterization, and in particular relates to a characterization method for conductivity regulation in a ferroelectric nano dot array. Background technique [0002] With the rapid development of the Internet and big data, storage devices based on ferroelectric materials have become candidates for a new generation of storage devices due to their characteristics of non-volatility, high speed, low power consumption, and high erasure times. [0003] At present, the demand for storage density, integration, and miniaturization of storage devices in the market continues to increase, and the thickness and dimension of ferroelectrics integrated in them continue to decrease. It is difficult to visualize the performance of ferroelectric materials at the nanoscale. In terms of conductivity, the enhanced conductivity of ferroelectric domain walls and the photovol...

AI Technical Summary

Problems solved by technology

[0006] At present, most of the research on the regulation of polarization on conductivity in BFO nanostructures is based on thin film materials, focusing on the use of I-V curves to study resistive switching, photovoltaics, etc. The preparation of materials with smaller sizes and lower dimensions, and the characterization of current two-dimensional imaging are important. Its technical bottleneck for high-density storage devices

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