4 results about "Nanodot array" patented technology

The invention relates to a preparation method of a nano waterproof fabric. According to the method, ellagic acid is introduced in the self-polymerization process of dopamine for in-situ reduction, a polydopamine bonding layer and a silver nanoparticle anchoring layer are synchronously constructed on the surface of nano silicon dioxide, and then perfluorodecyltriethoxysilane is catalyzed by silver nanoparticles for a regioselective click chemical reaction, so that the nano silicon dioxide is obtained. The multifunctional bionic core-shell particles with catalytic activity and super-hydrophobicity are prepared. The particles are compounded with a fluorosilicone copolymer containing dynamic disulfide bonds, a fluorosilicone polymer containing boric acid ester groups and a tannic acid-metal complex to form a double-dynamic cross-linking finishing agent system. After a fabric is subjected to ultraviolet / ozone pretreatment, discontinuous polydopamine nanodot arrays are formed on the surfaces of fibers through short-time dopamine polymerization to serve as catalytic sites, then interface priority crosslinking is triggered by utilizing the sites, and finally, dynamic keys are driven to cooperatively exchange through ultraviolet light fixation and heat treatment, so that the intelligent dynamic waterproof membrane is formed.

The application discloses a growth method of a strain cooperative regulation Ge / GaInAs epitaxial structure, and the epitaxial structure comprises, from bottom to top, a GaInP nucleation layer, a GaInAs matching buffer layer, a bottom tunnel junction n-GaAs / p-AlGaAs, an AlGaInAs lattice buffer layer, a self-assembled Ga nanodot array, a target GaInAs matching buffer layer, a target GaInAs layer, an AlInP window layer and a GaInAs cap layer on a germanium substrate. 0.1 As matching buffer layer, bottom tunnel junction n-GaAs / p-AlGaAs, Al k Ga 1‑x In x As lattice buffer layer, self-assembled Ga nanodot array, Al k Ga 1‑y In y As target matching buffer layer, Ga 1‑y In y As target layer, Al 1‑z In z P window layer and Ga 1‑y In y As cap layer. The application combines defect engineering of self-assembled nanodots and atom-level smooth growth of migration enhanced epitaxy, reconstructs an epitaxial starting interface on a nanometer scale, forms a triple system of a nucleation layer, a lattice buffer layer and a nanodot array, and realizes three-dimensional and multi-scale inhibition of dislocations and point defects.

The invention belongs to the technical field of nano material preparation, and discloses a method and device for preparing a flexible nanoneedle array structure in an interlayer mode. Providing an original substrate which is patterned and defines a mask; wherein the mask comprises a dielectric nanodot array. The core pain points that a traditional nanoneedle array is low in transfer rate and the structure is prone to damage are thoroughly solved through the interlayer type preparation and transfer integrated technology, efficient separation and complete transfer of the nanorod array from an original silicon substrate to a PDMS or hydrogel substrate are achieved by means of the design of middle interlayer isolation and mechanical stress separation, and the preparation process is simple and convenient. The transfer rate is increased to 95% or above, and the nanostructure is free of fracture and deformation; meanwhile, due to the selection of the flexible / transparent substrate, the problem that a traditional rigid substrate cannot be attached to a non-planar tissue is solved, the optical observation feasibility of interaction between the nanoneedle array and a biological tissue is achieved, and the functional blank of a traditional non-transparent nanoneedle array is filled up.

A method for forming a thin film structure may include providing a TiN member, forming a MoO2 thin film on the TiN member by using a first ALD (atomic layer deposition) process using ozone (O3) as a reactant, and forming a TiO2 thin film having a rutile crystal structure on the MoO2 thin film by using a second ALD process. The MoO2 thin film may have a thickness of about 10 nm or less. A TiO2 element layer may be further formed between the TiN member and the MoO2 thin film. The TiO2 element layer may have a nanodot array shape or a continuous layer structure. The TiO2 thin film may have a dielectric constant of 100 or more. The method of manufacturing a capacitor may further include forming a conductive material layer on the TiO2 thin film.