Methods of forming three-dimensional nanodot arrays in a matrix

a nanodot array and matrix technology, applied in the direction of superimposed coating process, vacuum evaporation coating, coating, etc., can solve the problems of multi-step process and high cost of the current method, and achieve the effect of rapid production

Inactive Publication Date: 2006-11-30
NARAYAN JAGDISH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0012] According to other embodiments, the nanodots and matrix materials are formed simultaneously, wherein the nanodots self-assemble within the matrix material. In such embodiments, a nanodot material and a matrix material are deposited on a substrate simultaneously, such as by ablation of an alloy target of a nanodot material and a matrix material or by ablation of two or more targets of those materials. The nanodot material and matrix material are selected such that the Gibb's free energy of oxidation of the matrix material is lower than that of the nanodot material. This can result in the spontaneous reaction of the matrix material with oxygen before the nanodot material will react with oxygen. The ablation may be formed in the presence of oxygen, such that the matrix material deposited on the substrate begins to react with oxygen, thereby forming an oxidized matrix material. At the same time, the nan...

Problems solved by technology

In the chemical self-assembly methods, however, only one or two monolayers may be produced, resulting in nanostructures having two-layers of nanoparticle arrays.
Furthermore, many of ...

Method used

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  • Methods of forming three-dimensional nanodot arrays in a matrix
  • Methods of forming three-dimensional nanodot arrays in a matrix
  • Methods of forming three-dimensional nanodot arrays in a matrix

Examples

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example 1

Sequential Deposition

[0076] The sequential formation of self-assembled nickel nanodots and subsequent deposition of matrix materials was performed according to embodiments of the present invention.

[0077] A cross-sectional transmission electron microscope image of a structure formed by the sequential deposition of a nickel nanodot material and the self-assembly of nickel nanodots followed by a deposition of an amorphous aluminum oxide matrix material is shown in FIG. 6. The self-assembled nickel nanodots in the nanodot clusters exhibit an average diameter of 10 nm and the separation between the nanodots is less than 1 nm. The size of the nickel nanodots is uniform, exhibiting a deviation of about 10 percent.

[0078] The structure shown in FIG. 6 was formed by the sequential deposition of nickel nanodots and aluminum oxide matrix material. The deposition was carried out on a silicon substrate at a temperature of about 500° C. in a high vacuum environment (approximately 5×10−7 Torr) u...

example 2

Simultaneous Deposition

[0082] The simultaneous formation of nickel nanodots in an aluminum oxide matrix on a substrate was performed according to embodiments of the present invention.

[0083] A pulsed laser deposition apparatus 300, such as that illustrated in FIG. 3 was used to simultaneously deposit nickel nanodots in an aluminum oxide matrix material on a silicon substrate 110. The pulsed laser deposition apparatus 300 included a multi-target stainless steel deposition chamber 310, an excimer laser 320, and a turbo molecular pump 330 for maintaining a vacuum in the chamber. A controlled amount of oxygen was also added to the deposition chamber 310 through a controlled gas nozzle. A nickel / aluminum alloy target 340 was placed on a target support 342 parallel to a substrate 110 located on a heater plate 350. The target 340 selected was a commercially available nickel-aluminum alloy including 50 percent by weight nickel and 50 percent by weight aluminum. Nickel was selected as the n...

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Abstract

Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of U.S. application Ser. No. 10 / 723,842, filed Nov. 26, 2003 and claims the benefit of U.S. Provisional Application No. 60 / 430,210 filed Dec. 2, 2002, and both are incorporated by reference in their entireties.STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with support from the United States Federal government under grant number 5-39207 from the National Science Foundation. The United States government has certain rights in this invention.FIELD OF THE INVENTION [0003] The present invention relates to the formation of quantum structures on substrates and in particular to the self-assembly of nanostructure arrays in a matrix material. BACKGROUND OF THE INVENTION [0004] In recent years, research into nanotechnology has been increasing. Of particular interest is the research into nanomagnetic materials, which may be used for such things as magnetic storage media, nonvolatile memory cells, fer...

Claims

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Application Information

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IPC IPC(8): C22C21/00C23C4/08
CPCB82Y30/00B82Y40/00C23C28/04C23C14/0688C23C14/28C23C14/024
Inventor NARAYAN, JAGDISHTIWARI, ASHUTOSH
Owner NARAYAN JAGDISH
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