Method for manufacturing transistor based on embedded-type metal nano point and manufactured product

A metal nano and transistor technology, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of difficulty and energy waste of electronic equipment, and achieve low power consumption, high mechanical stability and chemical inertness , the effect of small area

Active Publication Date: 2016-01-06
SEMICON MFG INT (SHANGHAI) CORP
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to control the size of FinFET according to the current semiconductor process and continuously reduce the size
[0006] On the other hand, due to the inherent properties of semiconductor elements such as silicon, the leakage current of semiconductor components is unavoidable, which causes a large amount of energy in electronic devices to be wasted in the form of heat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing transistor based on embedded-type metal nano point and manufactured product
  • Method for manufacturing transistor based on embedded-type metal nano point and manufactured product
  • Method for manufacturing transistor based on embedded-type metal nano point and manufactured product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0030] The present inventors conceived a method to fabricate a FinF...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a method for manufacturing a transistor based on embedded-type metal nano points and a manufactured product. Through this method, trenches with metal nano points can be manufactured, and transistors without semiconductors can thus be obtained. The method comprises forming fin-type structures on a substrate; filling gaps among the fin-type structures with a gap filler; exposing top parts of the fin-type structures; forming a metal nano point array on top parts of the gap filler and the fin-type structures; and removing the gap filler and the metal nano points on the gap filler, so as to form the structure of the metal nano points only disposed on the fin-type structures.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method for forming a fin field effect transistor based on embedded metal nano-dots, and products manufactured by the method. Background technique [0002] With the rapid development of semiconductor manufacturing technology, the feature size of transistors has entered the nanoscale. Since it took three to four years for the semiconductor industry to switch from a 0.18-micron process to a 0.13-micron process, it has been proved that improving the performance of current mainstream semiconductor devices through proportional scaling is subject to more and more physical and technological limitations. In order to enable integrated circuit technology to continue the development speed revealed by Moore's Law, transistors with new materials, new structures and new properties must be developed. [0003] Currently, a multi-gate field-effect transistor (MuGFET) has been ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/12
Inventor 张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap