771results about How to "Good body shape" patented technology

A trial intervertebral disk implant includes a first plate, a second plate, adjacent to the first plate, a conformable layer between the first and the second plates, and a pressure sensor within the conformable layer. The pressure sensor measures a distribution of compression force exerted by the first and the second plates on the conformable layer. The trial implant includes indicating means for indicating a position of the first and the second plates relative to each other, and locating means, for locating a position of the trial implant relative to the vertebrae between which said trial implant has been placed. The trial implant further includes at least one retractable member, connected to at least one of the first and the second plates. The retractable member can be extended or retracted through an aperture defined by a surface of the plate that is proximal to an abutting vertebra.

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

A method is disclosed for utilizing a deformable article of manufacture formed at least partly of a shape memory alloy. The method includes the steps of deforming the article from a first predetermined configuration to a second predetermined configuration while the shape memory alloy is, at least partially, in its stable martensitic state and at a first temperature. A resisting force is applied to the deformed article of manufacture using a restraining means and the article is heated from the first temperature to a second temperature in the presence of the resisting force. The stable martensitic state is transformed to a metastable stress-retained martensitic state. The resisting force is then removed allowing the alloy to transform to its austenitic state and the shape of the article to be restored substantially to its first configuration. Devices primarily medical devices operative by employing this method are also disclosed.

The semiconductor fabrication apparatus of this invention includes an exposure section provided within a chamber for exposing a design pattern on a resist film applied on a wafer, and a liquid recycle section for supplying, onto the wafer, a liquid for use in immersion lithography for increasing the numerical aperture of exposing light during exposure while recycling the liquid. The liquid recycle section includes a liquid supply part for supplying the liquid onto the resist film of the wafer, a liquid discharge part for discharging and recovering the liquid from above the wafer, and an impurity removal part for containing the liquid and removing an impurity included in the liquid.

Multiple electrode element capacitive micromachined ultrasonic transducer (“cMUT”) devices and fabrication methods are provided. A cMUT device generally comprises a top electrode disposed within a membrane, a bottom electrode disposed on a substrate, and a cavity between the membrane and the bottom electrode. In a preferred embodiment of the present invention, at least one of the first electrode and the second electrode comprises a plurality of electrode elements. The electrode elements can be positioned and energized to shape the membrane and efficiently transmit and receive ultrasonic energy, such as ultrasonic waves. Other embodiments are also claimed and described.

A system and methods for performing spinal fixation, including a spinal fixation system with at least rod member having shaped ends, at least two pedicle screws capable of receiving the shaped ends of the rod member, and a system for percutaneously introducing the rod member and pedicle screws to perform spinal fixation.

A semiconductor manufacturing apparatus includes a liquid supplying section for supplying a liquid onto a stage for holding a wafer on which a resist film is formed; an exposing section for irradiating the resist film with exposing light through a mask with the liquid provided on the resist film; and a removing part for removing, from the liquid, a gas included in the liquid. Thus, the liquid from which the gas has been removed is provided on the resist film, and therefore, foams included in the liquid or formed during the exposure can be removed. Accordingly, exposure abnormality such as diffraction abnormality can be prevented, resulting in forming a resist pattern in a good shape.

There is obtained a laser processing method by which an excellent shape of a cut surface can be achieved and an increase in cost can be suppressed. A laser processing method includes the steps of: preparing a material to be processed; and forming a modified area in the material to be processed, by irradiating the material to be processed with laser beam. In the aforementioned step, pulsed laser beam having a continuous spectrum is focused with a lens, thereby forming a focusing line constituted by a plurality of focuses that are obtained by predetermined bands forming the continuous spectrum of the laser beam, and the material to be processed is irradiated with the laser beam such that at least a part of the focusing line is located on a surface of the material to be processed, thereby forming the modified area on an axis of the focusing line.

Devices, systems, and methods for treating a heart of a patient may make use of structures which limit a size of a chamber of the heart, such as by deploying one or more tensile member to bring a wall of the heart and a septum of the heart into contact. A plurality of tension members may help exclude scar tissue and provide a more effective remaining ventricle chamber. The implant may be deployed during beating of the heart, often in a minimally invasive or less-invasive manner. Trauma to the tissues of the heart may be inhibited by selectively approximating tissues while a pressure within the heart is temporarily reduced. Three-dimensional implant locating devices and systems facilitate beneficial heart chamber volumetric shape remodeling.

A prosthesis for transluminal implantation consists of a flexible tubular three-dimensionally braided structure of metal or polymeric monofilaments, and polymeric multifilament yarns. The prosthesis can be elastically deformed to reduce its diameter through axial elongation. The monofilaments and multifilament yarns are arranged in axially spaced apart helices, concentric on a common central axis of the prosthesis. The monofilaments are selectively shaped before their interbraiding with the multifilament yarns, either by an age-hardening or other heat-setting stage, or a cold-working stage that controllably plastically deforms the strands. The shaped structural strands cooperate to impart to the prosthesis its nominal shape and resilience. The textile strands cooperate to provide one or more layers of sheeting that reduce permeability and thereby enhance the utility of the prosthesis as a vascular graft. An alternative embodiment prosthesis includes elastically and plastically deformable structural strands, selectively plastically deformed by cold working, then three-dimensionally braided to form the prosthesis.

Embodiments of the invention involve intraocular lenses that are light adjustable to change a focal length of the lens after it has been implanted into a person or animal. The lens includes a layer of UV absorbent material located on a rear side, which is the side facing a retina. The lens may comprise a UV reducing rim that surrounds a peripheral portion of the lens, and reduces or blocks UV light from striking the retina.

A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

An intraocular ring assembly and an artificial lens kit, both of which are usable for implantation in a lens capsule or capsular bag of natural eye. The intraocular ring assembly includes a first ring element having recessions therein, a second ring element, and a biasing element provided between the first and second ring elements. The artificial lens kit comprises such intraocular ring assembly and an intraocular lens to be movably supported in the recessions of the ring assembly in a coaxial relation therewith. A guide element may be provided to assist in rectilinear coaxial movement of the first and second ring elements.

Provided is a radiation-sensitive colored composition that enables formation of color cured films in which color concentration unevenness is inhibited and which have uniform color and exhibit a superior development property and excellent pattern formability in the formation of color patterns.The radiation-sensitive colored composition contains (A) a dye polymer containing a structural unit having a dye structure polymerized using a chain-transfer agent having a LogP value of 5 or less, and (B) a solvent.

An article (20) comprises a deformation-control member which can include an extending medial section (38), and a selected stiffened region (34). The stiffened region (34) can include a first array (40) of individual, stiffening elements (35), and at least a second array (50) of individual, stiffening elements (37). In particular features, each of the first and second arrays (40, 50) of stiffening elements can have a convergently arranged nose-end (70, 78), and a relatively divergently arranged tail-end (74, 80). In another feature, the first and second arrays (40, 50) of stiffening elements (35, 37) can be configured to substantially avoid intersecting in the medial section (38) of the deformation-control member. In a further feature, the second array (50) of stiffening elements (37) can have a counter-positioned configuration relative to the first array (40) of stiffening elements (35).

The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: forming a metallic Ti film 63 on a sapphire substrate 61, followed by treatment of nitration to convert it into a TiN film 64 having fine pores; thereafter growing a HVPE-GaN layer 66 thereon; forming voids 65 in the HVPE-GaN layer 66 by means of effects of the metallic Ti film 63 and the TiN film 64; and peeling the sapphire substrate 61 from the region of the voids 65 to remove it therefrom.

An amplifier circuit responsive to a power mode signal improves efficiency at low power levels without compromising efficiency at high power levels. At low power levels, high impedance is presented with suitable adjustment in the phase of the signal. Also, providing for predistortion linearization improves high power efficiency and switching the predistortion linearizer OFF at low power levels contributes little more than a small insertion loss. The power amplifier also uses a bias circuit incorporating a dual harmonic resonance filter to provide high impedance at a fundamental frequency and low impedance at a second harmonic. These properties are of particularly advantageous since amplifiers in cell-phones are used in low power modes most of the time although they are designed to be most efficient at primarily the highest power levels.

System and methods for creating shaped, non-circular boreholes in rocks especially for use with geothermal heat pump applications and for increasing wellbore support in applications such as horizontal oil and gas drilling are described. The systems and methods when applied to geothermal heat pumps create an elliptical shaped hole that is optimized for placing heat transfer tubes with a minimum of grout used. The significantly reduced cross-sectional area of the elliptical borehole also increases the overall drilling rate in rock and especially in hard rocks. In horizontal hard-rock drilling, creation of a horizontal non-circular borehole or modification of a circular borehole to a non-circular geometry is used to stabilize the borehole prior to casing insertion, and may also allow the use of lower mud pressures improving drilling rates. The system uses a non-contacting drilling system which in one embodiment uses a supersonic flame jet drilling system with a movable nozzle that swings between pivot points. In a second embodiment the elliptical shaped hole is created by an abrasive fluid or particle bearing-fluid or air jet drill that moves between pivot points. In another embodiment a non-contacting drill can use dual parallel nutating nozzles that create a pair of overlapping circular holes. The non-circular shaped hole is created by either the high temperature flame or water-particle jet or chemically active fluid jet as it removes rock material by erosion, dissolution and or thermal spalling. Modifications of circular boreholes to a generally elliptical shape can also be done using milling or jetting techniques.

The invention relates to the feeding of analyte ions, generated at atmospheric pressure, efficiently into the mass spectrometer. The invention provides a lengthy ion mobility drift tube with a focusing electric field inside to guide the ions from an ionization cloud generated at atmospheric pressure towards the entrance opening of the mass spectrometer, and to dry droplets which might occur in the ionization cloud by a hot drying gas flowing through the ion mobility drift tube towards the ionization cloud.

A method of manufacturing a laminated structure capable of being patterned into a favorable shape by preventing side etching is provided. After an adhesive layer made of ITO or the like, a reflective layer made of silver or an alloy including silver, and a barrier layer made of ITO or the like are laminated in order on a substrate with a planarizing layer which is a base layer in between, a mask is formed on the barrier layer, and the adhesive layer, the reflective layer and the barrier layer are etched at once by using the mask to form a laminated structure. As an etching gas, for example, a gas including methane (CH4) is preferable. The laminated structure is used as an anode, and an insulating film, an organic layer including a light-emitting layer and a common electrode as a cathode are laminated in order on the laminated structure so as to form an organic light-emitting device. The laminated structure can be used as a reflective electrode, a reflective film or wiring of a liquid crystal display.

An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of incident light from external can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common.

A generally cylindrical filter element incorporating nonsymmetrical or asymmetrical V-pleated media. The V-pleated media provides increased filter media per given filter volume, extended filter life, and a smaller filter for equivalent filter life. A smaller filter is generally beneficial for some applications such as aircraft, due to its lower weight. Various features of the filter include asymmetric variable pleat heights applied to a cylindrical or obround filter; defined pleat spacing applied to a variable pleat height element; optimal pleat density; and optimal shape of inlet and outlet.

A medical implant comprising a composite material which is composed of reinforcement fibers made of a magnesium-containing, bio-corrosive alloy, another bio-corrosive alloy containing a main component that is selected from the group consisting of Mg, Ca, Fe, and Y, or a non-biodegradable fiber material, embedded in a matrix made of crystalline magnesium or magnesium alloys.

An eccentric mass (EM) motor in a vibrotactile transducer provides a wide band vibrational stimulus to a mechanical load in response to an electrical input. The eccentric mass and motor may form part of the transducer actuator moving mass, which is in contact with a load, i.e, the skin of a user. The moving mass and the actuator housing may be in simultaneous contact with the load. The moving mass may be guided by a spring between the actuator housing and the moving mass. The load, moving mass, spring compliance, and housing mass make up a moving mass resonant system. The spring compliance and system component masses may be configured to maximize the actuator displacement and / or tailor the transducer response to a desired level. This configuration may be implemented as a low-mass wearable wide-band vibrotactile transducer.

A novel semiconductor device with a transistor using an oxide semiconductor film, in which a conductive film including Cu is used as a wiring or the like, is provided. The semiconductor device includes a first insulating film, an oxide semiconductor over the first insulating film, a gate electrode overlapping the oxide semiconductor with a gate insulating film positioned therebetween, a second insulating film in contact with a side surface of the gate electrode, and a third insulating film in contact with a top surface of the gate electrode. The gate electrode includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or a mixture of two or more of these elements).

An article (20) comprises a deformation-control member which can include an extending medial section (38), and a selected stiffened region (34). The stiffened region (34) can include a first array (40) of individual, stiffening elements (35), and at least a second array (50) of individual, stiffening elements (37). In particular features, each of the first and second arrays (40, 50) of stiffening elements can have a convergently arranged nose-end (70, 78), and a relatively divergently arranged tail-end (74, 80). In another feature, the first and second arrays (40, 50) of stiffening elements (35, 37) can be configured to substantially avoid intersecting in the medial section (38) of the deformation-control member. In a further feature, the second array (50) of stiffening elements (37) can have a counter-positioned configuration relative to the first array (40) of stiffening elements (35).