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The application provides a shielding isolation structure, a multi-cavity plasma reactor, a semiconductor processing device and a semiconductor processing method. The shielding isolation structure is arranged in an exhaust channel of the multi-cavity plasma reactor and comprises a shielding vertical plate made of a metal material and arranged along the extension direction of the exhaust channel to divide the exhaust channel into a plurality of exhaust units, wherein the exhaust channel comprises at least one exhaust hole on the side wall of each exhaust unit, and each exhaust unit is connected to a corresponding plasma reaction cavity via the at least one exhaust hole to exhaust the plasma reaction cavity; and a mounting base made of a metal material, fixedly connected to the inner wall of the exhaust channel and arranged at the bottom of the shielding vertical plate to support the shielding vertical plate, wherein a plurality of air passing holes are arranged on the mounting base to exhaust each exhaust unit via the plurality of air passing holes.