Preparation method of ordered ferroelectric topological domain structure array

Abstract

The invention relates to a preparation method of an ordered ferroelectric topological domain structure array. The preparation method comprises the following steps of: S1, depositing an SRO conductivelayer as a bottom electrode on an STO single crystal substrate in a (001) direction by adopting a pulse laser deposition method; S2, selecting a PZT target material with a Zr:Ti ratio being equal to 7:3, depositing a layer of diamond-phase PZT film on the SRO conductive layer by adopting the pulse laser deposition method; and S3, transferring the single-layer PS spheres to the surface of the PZT film to serve as a mask plate, then performing etching treatment by using oxygen plasma, then placing the mask plate in an ion beam etching machine for etching, and finally removing the residual mask plate of the single-layer PS spheres to obtain an ordered rhombic-phase PZT nano dot array which is a central topological domain structure. The ordered ferroelectric topological domain structure arrayprepared by the method reaches the nanoscale, and is a high-density ordered nano dot array structure. Ferroelectric topological domain structures are independent to each other, can be regulated and controlled by an external electric field, and have good thermal stability.

Description

technical field [0001] The invention relates to the technical field of ferroelectric materials, in particular to a method for preparing an ordered ferroelectric topological domain structure array. Background technique [0002] With the advent of the era of big data, traditional storage devices are difficult to meet the growing storage needs, which promotes the continuous transformation of storage devices. In recent years, memory has experienced the evolution from volatile memory to non-volatile memory and then to new non-volatile memory, and its storage performance has been greatly improved. Among them, ferroelectric memory has attracted widespread attention because of its excellent storage performance. It has the function of fast read and write access of dynamic random access memory, and can also retain data after the power is turned off. It can be stored quickly at very low power requirements and is expected to be widely used in small consumer devices. Applications. As ...

AI Technical Summary

Problems solved by technology

People have tried a variety of ways to prepare ferroelectric topological domains, and found that the density of single topological domains (ferroelectric vortex domains or central domains) induced by electric fields on thin films or bulks is low and difficult to integrate; The topological domain array (vortex domain) has defects such as harsh formation conditions and difficult control

Therefore, there are still great challenges in the preparation and controllable operation of ferroelectric topological domains.

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