The invention discloses a multi-
spectrum light emitting
diode structure, comprising a substrate and a
semiconductor lamination. The
semiconductor lamination at least comprises an n-type
semiconductor layer, a p-type semiconductor layer and a multi-
spectrum light emitting multi-
quantum well layer. The multi-
spectrum light emitting multi-
quantum well layer is composed of two or three groups of multi-
quantum well light emitting units which are arranged in a lamination mode and have different
quantum well forbidden band widths. According to the multi-spectrum light emitting multi-
quantum well layer, two or three wavelengths of light can be emitted at the same time. The
wavelength difference between any two wavelengths of light is
lambda. The
lambda is greater than or equal to 10nm and is smaller than or equal to 100nm. The multi-
quantum well light emitting units are periodic structures composed of quantum well
layers and quantum barrier
layers. The period number is K. The light emitting wavelengths of the multi-quantum well light emitting units are decided by the quantum well forbidden band widths. A light emitting
wavelength range is 380nm-700nm. According to the structure, multiple spectrums can be directly emitted from a
single chip, the number of the chips for five-
primary color light packaging is greatly reduced, and a great design window for
circuit design, optical design and light mixing of lamp beads is provided.