7results about How to "Improve exit efficiency" patented technology

The invention relates to the technical field of Micro-LED display, and discloses a Micro-LED ISO vertical angle etching method, which comprises the following steps: S1, epitaxial layer growth control: providing a sapphire substrate as a substrate, growing an epitaxial layer structure on the substrate, and growing silicon oxide with a certain thickness on the substrate through PECV equipment to serve as a protective layer, S2, photoetching patterning: selecting positive photoresist, and performing photoetching patterning on the positive photoresist to form an epitaxial layer; the method comprises the following steps: S1, coating the surface of a protective layer with a spin coater, and then carrying out photoetching and developing to manufacture a pattern, needing to be etched, of the ISO side wall, S3, carrying out metal coating and patterning, S4, carrying out dry etching epitaxy, and S5, removing the protective layer. The ISO side wall epitaxy with the angle approaching to be vertical is obtained by removing the epitaxial protection layer through wet etching or dry etching, the light-emitting area loss of the Micro-LED is reduced, the light emitting efficiency is improved, conditions are provided for Pitch reduction of a chip, meanwhile, chip breakage caused in the subsequent laser stripping process is reduced, and the yield and stability of chip manufacturing are improved.

This application provides a method, device, electronic device, and storage medium for exiting screen-dominating mode, belonging to the field of communication technology. It involves sending a heartbeat packet to a device management platform and receiving heartbeat response information from the platform. The heartbeat response information includes server connection parameters. The system connects to a message server based on these parameters and subscribes to message topics on the message server. These message topics include a screen-dominating exit command, which is sent from the device management platform to the message topic on the message server. In response to the exit command, the system obtains the screen-dominating status. If the screen-dominating status indicates that the terminal device is in screen-dominating mode, a pop-up component is generated. Clicking the pop-up component exits the screen-dominating mode. This allows exiting the screen-dominating mode without disassembling the device, reducing the difficulty and improving the efficiency of screen-dominating exit.

The utility model discloses a kind of high light efficiency COB packaging structures, including substrate, LED chip and encapsulation adhesive layer;Dam is equipped on the substrate, the LED chip is located in the dam and is electrically connected with the substrate, the encapsulation adhesive layer covers the LED chip;The encapsulation adhesive layer includes first encapsulation adhesive layer and second encapsulation adhesive layer stacked in turn, the first encapsulation adhesive layer is used to seal the LED chip and realizes preset color temperature and / or luminous color, the second encapsulation adhesive layer includes diffused light particle and the second encapsulation adhesive layer is provided with graphical structure in the side away from the substrate. High light efficiency COB packaging structure provided by the utility model can improve luminous efficiency while not affecting color temperature and / or luminous color.

The invention discloses a gallium nitride device and a preparation method thereof, and relates to the technical field of semiconductor devices. The gallium nitride device comprises a sapphire substrate, an AlN nucleating layer, an N-type AlGaN buffer layer, an intrinsic AlGaN active layer, an electron blocking layer and a P-type AlGaN layer which are sequentially stacked from bottom to top, a gradient doping edge stop layer is arranged on the edge of the P-type AlGaN layer, and meanwhile a bottom electrode in ohmic contact with the N-type AlGaN buffer layer and a top electrode in ohmic contact with the P-type AlGaN layer are formed respectively. According to the invention, by optimizing the structural design of the substrate, the nucleating layer, the buffer layer, the active layer, the electron blocking layer, the edge termination layer and the electrode, and combining with the seagull optimization algorithm to accurately regulate and control the preparation process parameters, the comprehensive improvement of the light extraction efficiency, the carrier recombination efficiency, the breakdown voltage and the long-term working stability is realized; and the photoelectric property and the reliability of the gallium nitride device are obviously enhanced.

The embodiment of the present invention discloses a wrapped patterned composite substrate, a preparation method and an LED epitaxial wafer. The wrapped patterned composite substrate includes a substrate substrate and a plurality of composite patterned microstructures formed on the substrate substrate; the composite patterned microstructure includes a central protruding microstructure and a crater-shaped annular protruding microstructure, the bottom of the central protruding microstructure is integrally connected to the substrate substrate, and the crater-shaped protruding microstructure is made of a heterogeneous material; the crater-shaped annular protruding microstructure is arranged around the central protruding microstructure, and wraps the bottom of the central protruding microstructure, exposing the top of the central protruding microstructure. The embodiment of the present invention solves the problem that the C-surface of the existing patterned composite substrate has defects and low light emission efficiency, and can increase the interface area and inclination angle of the composite patterned microstructure with a refractive index difference, thereby improving the light emission probability; at the same time, it can reduce the dislocation density of the epitaxial material during epitaxial growth, and improve the crystallization quality of the epitaxial material.

The utility model discloses a kind of COB high luminous efficiency packaging structures, including substrate, multiple LED chips and encapsulation adhesive layer;Dam is equipped on the substrate, multiple the LED chip is spaced and located in the dam and is electrically connected with the substrate, the encapsulation adhesive layer covers the LED chip;White reflective layer is equipped between multiple the LED chip, the bottom of the white reflective layer and adjacent the LED chip between there is preset distance, the sidewall of the white reflective layer and the surface of the substrate form preset included angle, the preset included angle is less than or equal to 90 °. The COB high luminous efficiency packaging structure provided by the utility model can improve macula problem while improving luminous efficiency.

The invention relates to the technical field of automobile parts, and discloses a high-luminous-efficiency ultra-narrow lens module, an automobile lamp and an automobile, the lens module comprises a reflector system and a lens system, the reflector system comprises a low-beam reflector module and / or a high-beam reflector module, the lens system corresponding to the low-beam reflector module is a low-beam lens module, and the lens system corresponding to the high-beam reflector module is a high-beam lens module. The lens system corresponding to the high-beam reflector module is a high-beam lens module; the low-beam reflector module and the low-beam lens module are matched to form a low-beam two-side static curve illumination optical assembly, a low-beam outer side illumination optical assembly, a low-beam central area illumination optical assembly, a low-beam outer side area illumination optical assembly and a low-beam inner side light type illumination optical assembly. The high-beam reflector module and the high-beam lens module are matched to form one or more high-beam lens optical assemblies. The high optical utilization rate is guaranteed while the modeling design is more free and flexible, and the optical utilization rate reaches 45% or above under the condition that the Z-direction light outlet can be made to be 10 mm ultra-narrow.