44results about How to "Improve exit efficiency" patented technology

A light guide plate, comprising a light exiting surface and a light entering end, has a shape in which its thickness perpendicular to the light exiting surface increases gradually as it is away from the light entering end and has scattering particles scattered therein. A light guide plate assembly comprises this guide plate, and a prism sheet in which a plurality of prisms are arranged in parallel with the apex angles of the prisms arranged facing the light exiting surface. A surface illuminating device comprises a light guide plate or a light guide plate assembly, and a liquid crystal display device comprises the surface illuminating device. The scattering particles scatter light entering at the light entering end and propagating through the inside and satisfy the following expression (1) and (2), and the apex angles of the prisms of the prism sheet satisfy the following expressions (3) and (4). (F is scattered sectional area, NP is particle density, LG is length of guide plate along incident direction, KC is correction coefficient, phi is apex angle of symmetric prism, and theta1 and theta2 are two apex angles divided by perpendicular of non-symmetric prism.) 1.1<=FNPLGKC<=8.2 ---(1) 0.005<=KC<=0.1 ---(2) 55 DEG<=theta<=80 DEG ---(3) 0 DEG<= theta1<= 15 DEG and 30 DEG<= theta2<= 45 DEG ---(4).

The invention provides a light guide plate, a forming model of the light guide plate, and its produce method. The light guide plate comprises: light outgoing plane incidence from side surface and outgoing light, and light reflex plane reflexing the light. The light guide plate characters in that at least one of the light outgoing plane and the light reflex plane comprises: plenty of first light diffusion parts, which are concavity or convexity in the thickness direction of the light guide plate, and diffuse the light; second light diffusion parts, which are located among the light diffusion parts, and have the same surface roughness. The light guide plate stably improve light outgoing efficiency.

A semiconductor chip (1) is specified comprising a carrier (3) and comprising a semiconductor body (2), which comprises a semiconductor layer sequence having an active region (21) provided for generating radiation, wherein: the carrier has a first carrier area (31) facing the semiconductor body (2) and a second carrier area (32) remote from the semiconductor body (2), the semiconductor body (2) is cohesively fixed to the carrier (3) by means of a connecting layer (4), and plurality of reflective or scattering elements (40, 7) are formed between the second carrier area (32) and the active region (21). A method for producing a semiconductor chip is furthermore specified.

Embodiments of the present application disclose a split-screen exit method and device, a storage medium, and an electronic device. The method comprises the following steps: detecting a sliding operation of a user for a split-screen display interface when the user is in a split-screen display state; when the sliding operation satisfies the preset split-screen exit condition, acquiring the number offingers of the user executing the sliding operation; determining a target split-screen application that remains displayed after the split-screen exit according to the number of fingers; exiting the split-screen display state and displaying the target split-screen application. This scheme can improve the efficiency of split-screen exit.

The invention discloses an LED chip structure of a graphene structure and a manufacturing method of the LED chip structure. A nucleating layer, a non-doped GaN layer, an N-type doped GaN layer and an InGaN/GaN multiple-quantum-well structure are formed on a substrate in an epitaxial mode; after the multiple-quantum-well structure grows in the epitaxial mode, growth is stopped, and a P-type doped graphene layer is adopted for replacing a P-type GaN epitaxial layer; a P electrode is manufactured on the P-type doped graphene layer, the N-type doped GaN layer is formed through etching and an N electrode is manufactured on the N-type doped GaN layer; the P electrode is correspondingly arranged on the P-type doped graphene layer; an epitaxial wafer is etched, and the N electrode is manufactured on the N-type doped GaN layer. Through the LED chip structure of the graphene structure and the manufacturing method of the LED chip structure, maldistribution of In groups caused by P-GaN growing after the InGaN/GaN multiple-quantum-well structure through temperature rise can be avoided, and wavelength homogeneity can be improved easily; epitaxial growth of the P-GaN is avoided, cost is reduced, and productivity is improved; an ultrathin graphene layer high in light transmission and conductivity is adopted as a P-type current expanding layer, the light outgoing efficiency can be effectively improved, and the external quantum efficiency can be improved.

A light emitting display panel (12), comprises a transparent substrate (1) equipped with a light emitting element (5) on a first surface (1a) thereof, a second surface (1b) of the transparent substrate defining a display surface; and a microlens array (9) is disposed above the second surface of the transparent substrate (1). A method of manufacturing the light emitting display panel (12) comprises the step of adhering the microlens array (9) to the second surface (1b) of the transparent substrate (1) via adhesive (10).

The present invention relates to a backlight module device based on polarization light source. Its structure includes the following several portions: base plate, polarization light source placed on said base plate and optical film placed on said polarization light source. It can be used as backlight illumination light source in liquid crystal display.

The invention discloses an LED light-emitting structure and a spike with the same. The LED light-emitting structure comprises a transparent shell (1), an LED luminous body (2) with a light condensingelement, a separation body (3) and an air layer (4), the LED luminous body (2) is packaged in the transparent shell (1) through the separation body (3), light emitted by the LED luminous body (2) is mainly condensed by the condensing element, incident by an inner inclined surface (1b), refracted by a side wall with a certain thickness, emitted by an outer inclined surface (1a), emitted in the horizontal direction, mainly emitted in the upward direction and supplemented by emitted in the horizontal direction, and the LED luminous body (2) emits light in the horizontal direction to generate a local structure capable of generating upward displacement. The horizontal emergent light intensity ratio is high, the light energy utilization rate is high, the structural design allowance delta H and the power supply design allowance are improved, the structural strength is high, the forming process of the shell is facilitated, the light emitting intensity ratio in the horizontal direction and theupward direction are reasonably distributed so as to be more suitable for different emphasis points of vehicles and pedestrians, and the diversified requirements of roads are well met.

The invention discloses a metal organic chemical vapor deposition (MOCVD) preparation method a transparent electrode used for an ultraviolet LED. The preparation method is characterized in that a functional adjusting layer is firstly grown in situ before a deposited and doped indium tin oxide (ITO) serves as a main body layer. The invention also discloses how to grow the functional adjusting layerand the main body layer in situ, the functional adjusting layer and the main body layer are grown in sequence on the surface of an ultraviolet LED epitaxial wafer as a growth substrate material. Themethod comprises the following steps: growing a substrate for pretreatment; introducing one of an indium source and a tin source or a mixed source of the indium source and the tin source into the surface of the nitride-based ultraviolet LED epitaxial water to form the functional adjusting layer; and introducing an indium source, a tin source and an oxygen source onto the functional adjusting layerto grow an ITO film so as to form the main body layer. The ITO transparent conducting film provided by the invention applied onto the nitride-based ultraviolet LED device has the advantages of low positive working voltage, extremely high reliability and efficient light extraction efficiency, and the application of the ultraviolet photoelectric device can be greatly promoted.

The invention provides a light guide component for a betavoltaic isotope battery. The light guide component comprises a reflection film layer, a light-emitting material layer, a side surface high-reflectivity layer and a transmission film layer. The reflection film layer is close to an isotope battery radiation source; the transmission film layer is close to an isotope battery transducer; the light-emitting material layer is in the shape of a thin sheet; the reflection film layer is located on the upper surface of the light-emitting material layer; the side surface high-reflectivity layer is located at the side surface of the light-emitting material layer; the transmission film layer is located at the lower surface of the light-emitting material layer. The high-reflectivity layer, the sidesurface high-reflectivity layer and the transmission film layer all have a thickness less than 4 [mu]m. The reflection film layer, the side surface high-reflectivity layer and the transmission film layer are single-layer materials or film structures consisting of multi-layer materials. The light guide component integrates a light-emitting material and light guide means for a betavoltaic isotope battery, so that light from radioluminescence materials is emitted from one side in a directed manner with high efficiency and the light emission power per unit area of the light-emitting materials isincreased while the size of the light-emitting materials is not increased.

The invention provides an LED chip modularized packaging method comprising the steps that a packaging substrate is provided, and insulation processing is performed on the surface of the packaging substrate; a hole groove used for placing a chip is formed in the packaging substrate; a reflecting layer is electroplated on the bottom part and the side walls of the hole groove; solid crystal glue is coated on the bottom part of the hole groove; the chip is installed on solid crystal glue of the bottom part of the hole groove; silica gel is coated on the packaging substrate and a copper plate covers silica gel, and the copper plate is flattened; a lead hole is formed in the corresponding silica gel and the copper plate above the chip; conductive metal is filled in the lead hole and residual conductive metal on the surface of the copper plate is removed; welding holes are formed in the copper plate through the photolithography and etching technology; and welding balls are formed in the welding holes. Damage of high temperature of the conventional reflow welding technology to the chip can be avoided, the problem that lead bonding is not firm due to the welding technology can be solved and cost can be reduced, and thus the method is suitable for large-scale production.

The invention belongs to the technical field of microcavity lasers, and relates to a one-way emergent defect oval microcavity and a laser. The one-way emergent defect oval micro-cavity is composed of a left semi-oval micro-cavity and a right semi-oval micro-cavity with unequal major semi-axes and equal minor semi-axes, and the edge of the oval micro-cavity is provided with a notch. The invention further provides a laser comprising the defect oval microcavity, one-way emission can be achieved in the visible light wave band, the far-field divergence angle is not larger than 3 degrees, and the highest emission efficiency reaches 93%. The invention has the advantages of simple and compact structure, easiness in preparation, smaller device volume, space saving, easiness in arraying and the like, and can be widely applied to the fields of biomedicine, environment detection and the like.