45results about How to "Improve exit efficiency" patented technology

Embodiments of the present application disclose a split-screen exit method and device, a storage medium, and an electronic device. The method comprises the following steps: detecting a sliding operation of a user for a split-screen display interface when the user is in a split-screen display state; when the sliding operation satisfies the preset split-screen exit condition, acquiring the number offingers of the user executing the sliding operation; determining a target split-screen application that remains displayed after the split-screen exit according to the number of fingers; exiting the split-screen display state and displaying the target split-screen application. This scheme can improve the efficiency of split-screen exit.

The invention relates to a micron-scale LED display device achieving light effect extraction and color conversion and a manufacturing method. The micron-scale LED display device comprises a pluralityof LED chips arranged on the surface of a substrate and distributed in an array and microstructures which are arranged on the surfaces of the LED chips and correspond to the LED chips in a one-to-onemanner; the microstructures comprise inverted-trapezoidal liquid storage grooves, and reflecting layers are arranged on the inner circumference sides of the liquid storage grooves; the microstructuresdistributed in an array and the LED chips sequentially form R units, G units and B units in the transverse direction, wherein the liquid storage grooves of the R units / the G units are each provided with a red / green quantum dot layer and a distributed Bragg reflection layer in sequence from bottom to top, and the liquid storage grooves of the B units are each sequentially provided with a transparent layer and a distributed Bragg reflection layer from bottom to top; the LED chips can emit blue light, and the blue light emitted by the LED chips is converted into red light / green light through thered quantum dot layers / the green quantum dot layers. By means of the micron-scale LED display device achieving light effect extraction and color conversion and the manufacturing method, emitting of light in the perpendicular direction can be increased; meanwhile, the intensity of the emitted light can be enhanced, and color conversion and the light extraction efficiency of micron-scale LED displaying can be effectively improved.

The invention discloses a resonant cavity for generating single photons, which includes: a resonant cavity and a substrate, the resonant cavity includes an upper reflective layer, a lower reflective layer and a The sandwich structure formed by the grating layer, the upper reflective layer and the lower reflective layer adopt metal thin film or metal-like thin film, the grating layer is provided with a grating microstructure to form an optical microcavity, and the substrate is arranged in the resonant cavity The bottom of the substrate, the substrate is a truncated inverted cone substrate, and the surface of the substrate in contact with the lower reflective layer is provided with a two-dimensional superstructure for improving reflection efficiency; and includes the resonant cavity and the excitation light generation system A single-photon source system, the excitation light generation system emits the excitation photons generated by it into the resonant cavity, and the excitation photons are emitted from the resonant cavity after multiple reflections in the grating microstructure .

The invention discloses a semiconductor light emitting diode and manufacturing method thereof. The structure and the semiconductor light emitting diode manufactured by adopting the manufacturing method can improve the light emitting efficiency and the light emitting strength. To achieve the purpose, the semiconductor light emitting diode comprises a substrate, a buffering layer and a first semiconductor layer with a first conductivity type, and a multi-quantum well has an active layer of a V-shaped pit, a Al quantum dot / a AlN nanorod / a Ga quantum dot / a GaN nanorod with a multi-cycle, a second semiconductor layer of a second conductivity layer and a contact layer; the portion of V-shaped pits corresponding to the lower surface, the center and the upper surface of the quantum well of the active layer has the Al quantum dot / the AlN nanorod / the Ga quantum dot, and the thickness in each cycle is identical to that of the quantum well; the portion of the V-shaped pit of a barrier layer of the quantum well has a GaN nanorod, and the thickness of each cycle is identical to the barrier layer.