67results about "OLED manufacture/treatment processes" patented technology

Disclosed is a display apparatus. The display apparatus includes: a display module including a flexible substrate, a display panel, and an encapsulation film; a lower module disposed below the display module; an upper module disposed on the display module; and an elasticity-adjusting layer disposed on or below the display module to adjust a position of a neutral plane in bending of the display apparatus, wherein an elastic modulus of the elasticity-adjusting layer is less than that of at least one of the display module, the lower module, or the upper module, so as to position the neutral plane within or proximate to the display module.

The invention relates to an organic light emitting device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electrically active region, the electrically active region comprising one or more organic layers and being provided between and in electrical contact with the bottom electrode and the top electrode, a light emitting region provided in the electrically active region, and a roughening layer, the roughening layer being provided as non-closed layer in the electrically active region and providing an electrode roughness to the top electrode by roughening the top electrode on at least one an inner side facing the electrically active region and an outer side of the top electrode facing away from the electrically active region. Furthermore, a further organic light emitting device, and a method of producing an organic light emitting device are provided.

The invention discloses an AMOLED device structure. The AMOLED device structure comprises a driving voltage device, a cathode layer, an organic light-emitting layer and an anode layer, wherein the cathode layer, the organic light-emitting layer and the anode layer are sequentially arranged in an overlapped mode, the cathode layer is connected with the negative pole of the driving voltage device, and the anode layer is connected with the positive pole of the driving voltage device. The AMOLED device structure is characterized by further comprising a cathode auxiliary layer, and the cathode auxiliary layer is connected with the cathode layer and the negative pole of the driving voltage device. The invention further discloses a manufacturing method of the AMOLED device structure. According to the AMOLED device structure and the manufacturing method of the AMOLED device structure, as the cathode auxiliary layer is arranged in an original structure, the problem that cathode resistance is too large because a cathode is thin or a display screen is large in size can be solved.

A method of manufacturing an organic light-emitting display apparatus, a deposition apparatus using the method, and an organic light-emitting display apparatus manufactured by the method, in which substrate effluence is blocked during transportation of a transport unit. The method includes: rotating a transfer unit, to which a substrate is placed or is to be placed, by first and second flip transport units, in a first rotational direction or in an opposite rotational direction to the first rotational direction, by a set angle; forming a layer by depositing a material emitted from a deposition assembly, on the substrate while placing the deposition assembly and the substrate to be separated from each other by a set distance and moving the substrate relatively with respect to the deposition assembly in a first direction via a first transfer unit; and transporting the transport unit in the opposite direction to the first direction after deposition.

An OLED display according to an exemplary embodiment includes: a first substrate; a second substrate arranged opposite to the first substrate; a sealant arranged in the shape of a closed loop along an edge of the second substrate between the first substrate and the edge of the second substrate; and a metal wire formed along the sealant between the first substrate and the sealant. One area of the metal wire has an opening pattern.

The invention relates to an organic light-emitting component (200), which is provided in various embodiment examples. The organic light-emitting component (200) can have a first translucent electrode (204); an organic light-producing layer structure (206) on or over the first electrode (204); a second translucent electrode (212) on or over the organic light-producing layer structure (206); an optically translucent layer structure (214) on or over the second electrode (212); and a mirror layer structure (216) on or over the optically translucent layer (214), wherein the mirror layer structure (216) has a light-scattering structure (218) on the side of the mirror layer structure (216) facing the optically translucent layer structure (214).

An apparatus and a method for manufacturing a shadow mask according to the present invention comprise: a step of positioning, on the top of a base, a masking part provided with a masking pattern which corresponds to a mask pattern to be manufactured; and a step of preparing, on the base, a mask pattern which corresponds to the masking pattern by irradiating a laser beam from the top of the masking part and treating the base with the laser beam, which has passed through the masking part, wherein a plurality of masking patterns are provided to have different widths, and the masking pattern of which the width is narrower towards the direction on which the base is positioned is provided so that the laser beam irradiated from the top of the masking part is irradiated on the base after passing through the plurality of masking patterns step by step. Moreover, the strength around a pattern is gradually adjusted using a phase shift mask and a slit mask, thereby enabling a taper-shaped process required for a deposition mask.

The invention relates to an LTPS technology. Compared with a traditional technology, the LTPS technology comprises the following steps that according to the type of a transistor, P- or B+ is doped to a source electrode or a drain electrode of the transistor; thermal treatment is conducted through a furnace to activate doped impurities; an oxide pattern with the thickness shown in the specification is formed through an electron beam evaporator and a mask plate in a vapor deposition mode, so that a gate electrode metal layer and the like are formed. The LTPS technology has the advantages that compared with an LTPS technology in the background art, cost is reduced and productivity is improved. The steps that a passivation insulation film with the thickness shown in the specification is formed through PECVD in a vapor deposition mode and a contact hole pattern for anode contact is formed through photoetching and etching are omitted, wherein the passivation insulation film can prevent an anode and a metal wire from generating a short circuit. The processes of vapor deposition, photoetching, etching and PR are simplified into a mask plate manufacturing process so that the time for manufacturing a TFT array set can be shortened and production cost can be reduced. The LTPS technology is not only suitable for the MIC but also suitable for the conditions of different crystallization methods such as MILC or MICC.

A light-emitting device includes an anode, a cathode, and a crosslinked emissive layer disposed between the anode and the cathode in which quantum dots are dispersed. The crosslinked layer includes a crosslinked material and quantum dots dispersed in the crosslinked mater, the quantum dots having ligands respectively bonded to the quantum dots. The quantum dots are distributed unevenly within the crosslinked material. The ligands have a concentration relative to the weight of the quantum dots of 10 to 45 wt %. A method of forming a crosslinked emissive layer of a light-emitting device in which quantum dots are dispersed includes the steps of depositing a mixture on a deposition surface and subjecting at least a portion of the mixture to an activation stimulus to crosslink the cross-linkable material.

The present invention relates to a method for manufacturing a light extraction substrate for an organic light emitting element, a light extraction substrate for an organic light emitting element, and an organic light emitting element that includes the same and, more specifically, to a method for manufacturing a light extraction substrate for an organic light emitting element, a light extraction substrate for an organic light emitting element, and an organic light emitting element that includes the same, which can enhance the light extraction efficiency of an organic light emitting element and, in particular, can reduce the process cost. To this end, the present invention provides the method for manufacturing a light extraction substrate for an organic light emitting element, the light extraction substrate for an organic light emitting element, and the organic light emitting element that includes the same, the method comprising: a mixture preparation step for preparing a mixture by mixing a plurality of thermoplastic polymers in a metal oxide nano-dispersion solution; a mixture coating step for coating the mixture on a base substrate; and a mixture firing step for firing the coated mixture, wherein during the mixture firing step, the plurality of thermoplastic polymers are gasified, and when the mixture firing step is completed, the metal oxide nano-dispersion solution is made as a matrix layer, and closed pores are formed in the positions within the matrix layer that were occupied by the thermoplastic polymers before the gasification.

The invention discloses a manufacturing method of an OLED of a double-face submicron order structure, and belongs to the technical field of OLED manufacturing. The method includes the following steps: (1) the two faces of a quartz substrate are simultaneously coated by single-layer silicon dioxide nanoballs in a spinning mode; (2) the well-distributed single-layer silicon dioxide nanoballs serve as masks, submicron order graph structures are etched on the two faces of the quartz substrate; (3) the quartz substrate with the submicron order graph structures is evenly coated by an ITO conductive film in a spinning mode to obtain an OLED anode; (4) an electron hole conveying layer, an evaporation light-emitting layer and an electronic conveying layer are sequentially evaporated on the OLED anode, finally a cathode is evaporated and the OLED of the double-face submicron order structure is obtained. The quartz substrate manufactured in the method has an OLED component of a double-face structure, a light-emitting model of the quartz substrate is close to a Lambert reflector, spectral line deviation and obvious angle dependence do not exist, the optical extraction efficiency of the component is improved, and meanwhile, performance regression does not occur.

The invention discloses an organic light-emitting device and a manufacturing method thereof. The organic light-emitting device comprises a substrate, first isolation columns, transparent electrode layers and organic light-emitting layers, wherein the first isolation columns are formed on the substrate and arranged in the first direction of the substrate; the transparent electrode layers are formed on the substrate between two adjacent first isolation columns and on the first isolation columns; the transparent electrode layers formed on the substrate are mutually separated from the transparent electrode layers formed on the first isolation columns; and the organic light-emitting layers are formed on the corresponding transparent electrode layers on the substrate. Therefore, through utilization of a height difference between each first isolation column and the substrate, the transparent electrode layers in a second direction are naturally separated from each other, and an additional transparent electrode layer etching procedure is not needed.

The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Provided is an organic electroluminescent device, comprising an anode, a hole injection layer, a hole transport layer, a luminous layer, an electron transfer layer, an electron injection layer, and a cathode stacked in sequence. A cathode layer is formed by a first doping layer, and a second doping layer, and a third doping layer. The first doping layer contains a first metal material and an organic electron transport material doped in the first metal material. The second doping layer contains the first metal material and titanium dioxide doped in the first metal material. The third doping layer contains the first metal material and a second metal material doped in the first metal material. The work function of the first metal material is -2.0 eV to -3.5 eV. HOMO energy level of the organic electron transport material is -6.5 eV to -7.5 eV. Glass-transition temperature is 50 DEG C to 100 DEG C. The work function of the second metal material is -4.0 eV to -5.5 eV. The invention also provides a method for preparing the organic electroluminescent device.