82results about How to "Reduce manufacturing process steps" patented technology

The invention relates to a manufacturing method of spiced beef jerky. The method comprises the following steps: splitting fresh beef, pickling the cut beef with salt for 8-15 hours, boiling the pickled beef, removing blood-contained water, then slicing the boiled beef; mixing the sliced beef, water, white sugar and spice uniformly according to the proportion of 40-60 parts of beef, 3-5 parts of water, 4-6 parts of white sugar and 1-2 parts of spice; frying the mixed beef at 100-150 DEG C till dry; drying the fried beef at 50-90 DEG C until the moisture in the beef is 15-30%. The spice comprises 5-8 parts of radix angelicae, star aniseed, Chinese prickly ash and amomum tsao-ko each, 2-3 parts of cinnamon, cloves, round cardamom, amomum villosum and rhizoma kaempferiae each, 1 part of old ginger and liquorice each, and 1 part of equally mixed fennel, bay leaf, nutmeg, radix aucklandiae, galanga, mangnolia officinalis, fructus aurantii, tangerine peel and mint. The method has simple steps. The manufactured beef jerky is yellowish brown, bright in color, fine and smooth to be tasted, suitably salty and sweet, and proper in hardness. The spice has the functions of eliminating smell, retaining freshness, tonifying spleen and appetizing, and can be widely applied to seasoning of other food.

The invention discloses a method for modifying a lithium-rich manganese-based cathode material. The method comprises the following steps: preparing a precursor of the lithium-rich manganese-based cathode material, uniformly mixing the precursor with lithium carbonate and doping and modifying metal villiaumite, sintering the uniformly mixed mixture at a high temperature to obtain a modified lithium-rich manganese-based cathode material. The modification process of the method disclosed by the invention is simple and easy to control, the steps of the existing preparation process are not added, and the electrochemical performance of the product is excellent.

The invention relates to an array substrate, a manufacturing method of the array substrate and a display device. The manufacturing method of the array substrate is characterized in that a source electrode, a drain electrode, an active layer and a first transparent electrode of a thin film transistor in the array substrate are formed through a masking work procedure, the active layer and the first transparent electrode are formed by the same metal oxide layer, the source electrode and the drain electrode are located above the active layer, the first transparent electrode corresponds to a first semi-light-transmitting region of a mask plate, a channel region of the thin film transistor corresponds to a second semi-light-transmitting region of the mask plate, the source electrode and the drain electrode of the thin film transistor correspond to the non-light-transmitting region of the mask plate, and the light transmittance of the first semi-light-transmitting region of the mask plate is larger than the light transmittance of the second semi-light-transmitting region of the mask plate.

The invention provides a liquid crystal display panel and a manufacturing method thereof. The liquid crystal display panel comprises a first substrate, a second substrate which is opposite to the first substrate and a liquid crystal layer which is arranged between the first and the second substrates, wherein under the situation of non-electrification, liquid crystal molecules in the liquid crystal layer are arranged to be vertical to the first substrate, and the liquid crystal layer comprises an anchoring substance; the liquid crystal molecule which is close to the surface of the first substrate or the second substrate is pre-inclined under the situation of non-electrification through the anchoring substance. The liquid crystal display panel and the manufacturing method thereof are free from forming projection or crack and from changing other structures of a pixel unit, can realize the pre-inclination of the liquid crystal molecules, can simplify the manufacturing process procedure, can improve the yield of the product, and can reduce the cost.

An image sensor package and a solid state imaging device. The image sensor package includes an image sensor having an image sensor and connection pads on a wafer. A transparent plate is attached to the upper surface of the image sensor chip via an adhesive. The connection pads include connectors, and the image sensor package exchanges signals with a main board of the solid image device through the connectors.

The invention relates to a forming method of a groove, which comprises the following steps: providing a first groove, wherein the first groove is formed in a base; etching a base in the first groove, wherein etching gases react with the base during the etching, home positions of two side walls of the first groove are provided with side walls; continuously etching the base until reaching the needed depth so as to form a second groove by using the side walls as a mask; and removing the side walls. Reaction products of the etching gases and the base at the two side walls of the first groove are formed into polymer side walls at the home positions in the process of dry-etching the base in the first groove, the polymer side walls replace multilayered medium layer side walls at two side walls of the first groove before the etching of the second groove and are used as a hard mask of continuously etching the second groove, thereby improving the efficiency of the semiconductor fabrication process and optimizing the process.

The invention provides a cover plate and a manufacturing method thereof, a display panel and a display device, which relate to the technical field of display. A thin film transistor, an optical sensorand a first electrode located on the optical sensor are are sequentially formed on a first substrate by a composition process, a passivation layer is formed, a black matrix and a first electrode connection hole penetrating the passivation layer are sequentially formed on the passivation layer through a composition process, An electrode connecting layer is formed on the black matrix by a composition process, the electrode connecting layer comprising an auxiliary cathode and a first electrode connecting wire arranged in the same layer, and the first electrode connecting wire is connected with the first electrode through a first electrode connecting hole, and a color filter layer, a flat layer, a support column and a second electrode are sequentially formed by the composition process. As theauxiliary cathode and the first electrode connecting wire are formed by the one-time composition process, the manufacturing process steps are reduced, the manufacturing cost is reduced, and the auxiliary cathode and the first electrode connecting wire are arranged on the same layer, so that the occupied space of the cover plate can be saved.

The invention discloses a method and device for calibrating an installation angle of a vehicle-mounted radar, and related equipment. The method for calibrating the installation angle of the vehicle-mounted radar comprises the following steps of acquiring the target information of a plurality of objects detected by the vehicle-mounted radar, wherein the target information comprises a target distance between the object and the vehicle and a target angle between the object and the vehicle; selecting at least one group of target objects from a plurality of objects according to the target distanceand the target angle, each group of target objects including two objects satisfying a preset condition; and calculating an actual installation angle of the vehicle-mounted radar according to the target distance and the target angle of each object in the at least one group of target objects. The method is advantaged in that dynamic calibration of the radar installation angle is achieved when the vehicle is subjected to road testing, so steps of the whole vehicle manufacturing process of the vehicle can be reduced, the time and labor can be effectively saved, and vehicle assembly production efficiency is improved.

The invention discloses a light sensing circuit and a driving method thereof, a display panel and a display device, belonging to the technical field of display. The light sensing circuit comprises that: the gate of a first transistor is electrically connected to a first control terminal, the first pole is electrically connected to a first voltage terminal, and the second pole is electrically connected to a first node; the gate of a second transistor is electrically connected to the first node, the first pole is electrically connected to a second voltage terminal, and the second pole is electrically connected to the first pole of a third transistor; the gate of the third transistor is electrically connected to a second control terminal, and the second pole is electrically connected to a data line; the gate of a fourth transistor is electrically connected to a third control terminal, the first pole is coupled to the first node, and the second pole is electrically connected to a third voltage terminal; the first transistor and the fourth transistor comprise active layers formed of metal oxide, and the fourth transistor is multiplexed into a light sensing element; and the second transistor and the third transistor comprise active layers formed of polysilicon. Compared with the prior art, the invention is advantageous to reduce the process steps and thin the display panel.

The invention provides a backlight module, a manufacturing method thereof and a display device, relates to the technical field of display, and solves the problems that an existing display device can only rely on power provided by other power supply devices, and the display device is not integrated with a power generating unit. The backlight module comprises a light guide plate and at least one power generating unit. Each power generating unit comprises a first electrode, a second electrode and a power generating layer located between the first electrode and the second electrode. Each power generating unit is disposed on one side opposite to the light emitting direction of the light guide plate. The first electrode of at least one of the power generating unit is in direct contact with the light guide plate. Each first electrode can reflect light, and one side, facing the light guide plate, of the first electrode is a reflecting surface.

The invention discloses a resistance(R)-electric capacity(C) net thin-film integrated circuit structure that comprises crosswise diodes and the preparing method, adopting common silicon pellet (P) to prepare network thin-film integrated circuit of high conductive layer and over voltage protection. P+ area (11) formed with boron diffusion works as the public ground conductive layer, base of the crosswise diode (D) and bottom electrode of the capacitor (C). N+ area (22) formed with phosphor diffusion works as emitter area of the crosswise diode. The W area between P+ and N+ area is the lead area of the diode with reverse bias voltage. Prepare SiO2 and Si3N4 insulating dielectric medium (31) by means of chemical vapor deposition (CVD) on the surface of silicon pellet. The aluminum layer is taken as metallic layer, after photo etching, forming internal connection leads of circuit, pressure point are aluminum layer (43) and ground (G) press welding point. Deposition phosphor doping SiO2 (34) forms chip inactivation layer, preparing chip after photo-etching press welding point (43) and grounding point (G).

The invention discloses a packaging structure and packaging method of a high-pixel image sensing chip. A first through hollow cavity is manufactured in a carrier board, a second through hollow cavity is manufactured at the same time, the carrier board and the first hollow cavity in the carrier board can provide a large gap for a sensing region of the high-pixel image sensing chip and a light-transmission substrate, a role in protecting the sensing region from being polluted or damaged is played in the packaging process, and packaging reliability and stability are improved. Welding pads of the image sensing chip are exposed through the second hollow cavity, the electric property of the image sensing chip can be leaded out to a functional substrate through direct routing; compared with the traditional silicon through hole process, the packaging method does not need to lay an insulation layer, a metal circuit layer and the like but directly leads out the electric property, has the advantages of the simple manufacture procedure and the small volume of a packaging body, and can effectively save economic cost at the same time; and the first through hollow cavity is manufactured in the carrier board, the second through hollow cavity is manufactured at the same time, so the manufacturing process steps are reduced, and the process is very simple.

The invention provides a bouyei sour soup and a preparation process thereof. The bouyei sour soup comprises, by weight, 90.0-120.0 parts of small tomato, 2.7-3.6 parts of apple, 5.5-7.0 parts of roxburgh rose, 0.9-1.2 parts of lemon, 1.8-2.4 parts of pear, 9.0-12.0 parts of red pepper sauce, 0.9-1.2 parts of pungent litse fruit, 1.3-1.9 parts of salt, 0.4-0.7 part of rock sugar and 0.1-0.3 part ofhard liquor. A red pepper sauce processing method includes first cleaning red pepper, then placing the red pepper in a grinder to grind the red pepper, then placing the ground red pepper in a vegetable pulping machine to pulp the red pepper to make the red pepper sauce. The bouyei sour soup is mainly made of the small tomato, so that the sour soup contains a large amount of vitamins, and fewer raw materials are used. The bouyei sour soup is less in preparation step and convenient to use and provides convenience for people.

The invention belongs to the technical field of pressure vessel safety equipment, and relates to a safe pressure relief device for fluid overpressure, in particular to a rupture disk for non-welding gas cylinders. The rupture disk adopts JYH21CT high-chromium stainless steel material. As the JYH21CT high-chromium stainless steel has excellent corrosion resistance, low cold-work hardening property, high yield strength, good ductility and no nickel serving as rare metal, manufacturing processes and cost can be reduced. Meanwhile, by utilizing the ultra-low carbon and low titanium content of the material, the weldability and high yield strength of the material are increased. The molding height of the rupture disk is between 4.0 to 4.7 mm, and a weakening groove of the rupture disk is at an angle of 40 to 45 degrees. By utilizing the characteristics of no expensive nickel serving as rare metal contained by the material, no cold deformation hardening of products and no need for high-temperature heat treatment, the invention greatly reduces the price of the products, and by utilizing precise molding technology and processing technology, the forward bursting pressure and the reverse bursting pressure of the products are basically consistent, so that the safety of the products is greatly improved.

The invention belongs to the technical field of mobile phone accessory production equipment, and relates to the a mobile phone charger final assembly production line. The mobile phone charger final assembly production line comprises a mobile phone charger machining line and a carrier backflow line which are mounted in parallel, the mobile phone charger machining line comprises a lead penetrating station, an automatic welding device, an after-welding visual inspection station, an oil spraying and dispensing device, an insulation piece and bottom shell assembling station, an automatic dispensingdevice and a covering and conveying-out station which are connected in sequence, the carrier backflow line surrounds the outer side of the mobile phone charger machining line, the two ends of the carrier backflow line are connected with the lead penetrating station at the input end of the mobile phone charger machining line and the covering and conveying-out station at the output end of the mobile phone charger machining line, through the more scientific procedure design, the manufacturing process step of a mobile phone charger can be greatly shortened, participation and intervention of automation equipment are facilitated, feasibility of the full-automatic production line of a mobile phone charger can be improved, and the mobile phone charger production efficiency is higher.

The invention discloses a touch control display device which comprises the components of: a plurality of sub-pixel areas, a plurality of display control assemblies, a plurality of pixel electrodes, a plurality of touch control signal transmitting electrodes and a plurality of touch control signal receiving electrodes. The display control assemblies are respectively arranged in each sub-pixel area. Furthermore each display control assembly comprises a first gate electrode, a first source electrode and a first drain electrode. The pixel electrodes are arranged in each sub-pixel area. Furthermore each pixel electrode is electrically connected with a corresponding first drain electrode. The touch control signal transmitting electrodes are used for transmitting a touch control driving signal. At least one selected from each touch signal transmitting electrode and each touch control signal receiving electrode is used for transmitting a display gate signal to a corresponding first gate electrode or transmitting a display data signal to a corresponding first source electrode.

The invention relates to a microthruster chip of a microsatellite. The microthruster chip comprises a heating cavity (3) and is characterized in that a heating wire (5) is arranged in the heating cavity (3), and lead-out holes (17) are formed in the wall of the heating cavity (3) so as to enable two ends of the heating wire (5) to be led out of the heating cavity (3) from the heating cavity (3).