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38results about How to "No increase in production costs" patented technology

Lead-free copper alloy with limited Al and preparation method thereof

The invention discloses lead-free copper alloy with limited Al and a preparation method thereof. The lead-free copper alloy contains the following chemical components in percentage by weight: 60-65 percent of Cu, Sn being less than 0.0057 percent, Pb being less than 0.100-0.150 percent, 0.012 percent of Ni, 0.032 percent of Mn, 0.122-0.200 percent of Fe, 2-3 percent of Al, 0.018 percent of Si, 0.002 percent of P, S being less than 0.001 percent, 0.014 percent of Sb, 0.005 percent of As, 0.001 percent of Bi, Cr being less than 0.001, Cd being less than 0.0001 and the balance of Zn. The preparation method comprises the following steps: selecting industrial lead-free copper or a raw copper bar or copper scales with copper content being more than 62 percent as master alloy; preheating a masteralloy ingot to 1,100 DEG C until to be molten; adding required trace elements and slightly stirring and heating the trace elements and the molten alloy ingot to 1,200 DEG C; standing still an obtained mixture for half an hour and then dropping the temperature of the mixture to 1,000 DEG C; and carrying out pressure casting. Cutting, stretching and yield coefficients of an obtained pressure casting piece can all be effectively improved; and the pressure casting piece can meet the requirements of casting and machining.
Owner:卓美香

Grinding cushion, and grinding device and grinding method using grinding cushion

The invention discloses a grinding cushion, and a grinding device and a grinding method using the grinding cushion. The grinding cushion comprises first grinding areas and a second grinding area, wherein the first grinding areas are formed on the edge of the grinding cushion, and are used for grinding the edge of a wafer; the second grinding area can be used for at least accommodating an entire wafer surface, and is used for grinding the entire wafer; and grooves are formed between the first grinding areas and the second grinding area of the grinding cushion. The grinding device provided with the grinding cushion comprises a grinding table, a grinding head and a first conveying device, wherein the wafer is placed on the grinding cushion, and the edge of the wafer is contacted with the first grinding areas; the grinding table is kept static; the grinding head is rotated for grinding the edge of the wafer; and a liquid ejected by the first conveying device is only retained in the first grinding areas. Due to the adoption of the grinding cushion, the grinding device and the grinding method, the entire wafer surface can be ground, the edge of the wafer can be ground separately, the uniformity of the ground central area and the edge area of the wafer is improved, and the production yield of a semiconductor device is increased greatly.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Arsenic-free glass bottle

The invention discloses an arsenic-free glass bottle. The objective of the invention is to overcome the problem that the dissolving-out amounts of arsenic and antimony in conventional glass for food package are high and cannot reach state-specified standard, which is unfavorable for human health and environmental protection. The arsenic-free glass bottle is prepared from the following raw materials by weight: 51 to 63 parts of quartz sand, 3 to 9 parts of lithium (or sodium and potassium) feldspar, 12 to 19 parts of calcite, 0 to 20 parts of dolomite, 1 to 3 parts of sodium nitrate, 0 to 2.2 parts of fluorite, 0 to 3 parts of sodium fluosilicate, 15 to 21 parts of sodium carbonate, 0.1 to 0.5 part of sodium sulfate, 0.3 to 1 part of calcium sulfate and 0.1 to 0.5 part of cerium oxide. Theabove raw materials are uniformly mixed; and then uniform mixing, melting, shaping and annealing are successively carried out according to conventional manufacturing methods for glass bottles so as toprepare the arsenic-free glass bottle. The arsenic content of the arsenic-free glass bottle is far lower than an allowable dissolving-out amount prescribed in national standard, so the arsenic-free glass bottle is free of toxic and side effect to human beings and does not produce environmental pollution. Under same melting temperature, the clarification time of the arsenic-free glass bottle is 1/2 the clarification time of glass using arsenic antimony oxide, and production capability is improved by 10% or so.
Owner:梁泽超

Arsenic-free glass bottle

The invention discloses an arsenic-free glass bottle, which aims to solve the problem that the existing glass bottle (for food packaging) with high arsenic and antimony releases is bad for human health and environmental protection and can not meet the state-specified standards. The arsenic-free glass bottle is prepared from the following compositions in part by weight: 100 parts of quartz sands, 6 to 18 parts of lithium (or sodium, potassium) feldspars, 24 to 38 parts of calcites, 0 to 40 parts of dolomites, 2 to 6 parts of sodium nitrates, 0 to 4.4 parts of fluorites, 0 to 6 parts of sodium fluosilicates, 30 to 40 parts of calcined sodas, 0.7 to 0.9 parts of sodium sulfates, 1.5 to 1.9 parts of calcium sulfates, and 0.7 to 0.9 parts of cerium oxides through the steps of evenly mixing the compositions, and then carrying out even blending, founding, forming and annealing on the obtained mixture according to the existing glass manufacturing method so as to obtain the arsenic-free glass bottle. In the arsenic-free glass bottle of the invention, the arsenic content is far below the state-specified allowable release, therefore, the arsenic-free glass bottle has non-toxic side effects on the human body and does not lead to environmental pollution; and at a same melting temperature, the clarification time is reduced to half of that by using arsenic and antimony oxides, therefore, the production capacity is about 10 percent.
Owner:忻州鑫洋玻璃制品有限公司

Diffusion method of monocrystalline silicon base inverted pyramid-like suede structure

The invention provides a diffusion method of a monocrystalline silicon base inverted pyramid-like suede structure. The method comprises the steps of: employing a P-type monocrystalline silicon wafer as a monocrystalline silicon substrate, performing the anisotropic etching on the front surface of the monocrystalline silicon substrate to obtain a uniformly distributed inverted pyramid-like structure; and putting the silicon wafer having the inverted pyramid-like structure into a diffusion furnace for step-by-step diffusion, wherein the step-by-step diffusion comprises deposition of a phosphorussource under the condition of sequentially increasing the temperature and the temperature reduction procedure with at least two gradients. The design of three-step ordered deposition is beneficial tothe full and uniform deposition of the phosphorus source on the surface of the silicon wafer; the temperature reduction is divided into two steps of buffer type temperature reduction, so that a deadlayer formed by accumulation of excessive phosphorus sources on the surface of the silicon wafer is reduced, the diffusion sheet resistance obtained by the method is ideal sheet resistance and the uniformity is good.
Owner:SUZHOU TALESUN SOLAR TECH CO LTD

Polishing pad, polishing device and polishing method using same

The invention discloses a grinding cushion, and a grinding device and a grinding method using the grinding cushion. The grinding cushion comprises first grinding areas and a second grinding area, wherein the first grinding areas are formed on the edge of the grinding cushion, and are used for grinding the edge of a wafer; the second grinding area can be used for at least accommodating an entire wafer surface, and is used for grinding the entire wafer; and grooves are formed between the first grinding areas and the second grinding area of the grinding cushion. The grinding device provided with the grinding cushion comprises a grinding table, a grinding head and a first conveying device, wherein the wafer is placed on the grinding cushion, and the edge of the wafer is contacted with the first grinding areas; the grinding table is kept static; the grinding head is rotated for grinding the edge of the wafer; and a liquid ejected by the first conveying device is only retained in the first grinding areas. Due to the adoption of the grinding cushion, the grinding device and the grinding method, the entire wafer surface can be ground, the edge of the wafer can be ground separately, the uniformity of the ground central area and the edge area of the wafer is improved, and the production yield of a semiconductor device is increased greatly.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Motor power commutator

PendingCN107332399ASimplify wiring methodsAchieve phase inversionSupports/enclosures/casingsCommutatorPower flow
The invention discloses a motor power commutator, which includes an upper cover, a base, a shift handle, a reed and a turning plate, and the first connecting pin is connected to the second contact through a first conductive sheet , the fourth wiring pin is connected to the first contact through the second conductive sheet, and the base is provided with wiring holes corresponding to the positions of the wiring pins of the steering plate, and the steering plate is placed on the base and the wiring pins of the steering plate are respectively placed in the corresponding wiring holes, and the two reeds are correspondingly arranged at the lower part of the handle, and the reeds at the lower part of the steering handle are in contact with the wiring pins on the upper part of the steering plate , the shifting handle and the steering plate are pressed and mounted on the base through the upper cover, and the upper end of the shifting handle penetrates and protrudes from the top surface of the upper cover. It can adapt to the requirements of different specifications of the motor junction box. The steering plate adopts a double-layer structure. After the handle is moved to either end, the direction of the current will be changed, so as to realize the forward and reverse function of the switch; it has fast wire insertion and push wire Function.
Owner:温州市圣帕电子科技有限公司 +1

A high-temperature creep-resistant molybdenum plate doped with K and Si elements and its preparation method

The invention relates to a high-temperature creep-resistant Mo (Molybdenum) plate doped with K (Potassium) and Si (Silicon) elements and a preparation method thereof. The preparation method comprises the following steps of 1, respectively weighing a required K source and a required Si source according to the contents of K and Si in the Mo plate, and performing preparation to obtain a mixed solution; 2, uniformly mixing the mixed solution obtained in the step 1 with a Mo source, and performing drying to obtain a doped Mo source; 3, performing reduction treatment on a mixture obtained in the step 2 to obtain doped Mo powder; 4, performing compression, sintering and rolling treatment on the doped Mo powder obtained in the step 3 to obtain a doped Mo plate; and 5, performing annealing treatment on the doped Mo plate obtained in the step 4 to obtain a Mo-K-Si high-temperature creep-resistant Mo plate with the thickness being 0.5 to 4mm. The high-temperature creep-resistant Mo plate provided by the invention has the advantages that the material has very high high-temperature creep-resistant performance; the creep-resistant performance at a temperature below 1900 DEG C is much better than that of pure Mo; and the Mo plate can be used as a high-temperature sintering setter plate or a structural component in a high-temperature furnace.
Owner:安泰天龙钨钼科技有限公司 +1

Method for preparing smokeless fireworks bright beads

The invention discloses a method for preparing smokeless fireworks bright beads. The smokeless fireworks bright beads are characterized by comprising four kinds of red, green, purple and yellow, eachof the smokeless fireworks bright beads comprises a kernel and an outer layer, and the smokeless fireworks bright beads are in the shape of beads, wherein the kernel comprises the following componentsin percentage by mass: red: 55% of KMnO4, 24% of SrCO3, 17% of epoxy slices and 4% of dextrin; green: 50% of Ba(NO3)2, 10% of magnesium powder, 10% of aluminum powder, 7% of resins, 7% of rare earth,15% of KCIO4 and 1% of epoxy slices; purple: 20% of CuO, 40% of KCIO4, 10% of polyvinyl chloride, 10% of phenolic resins, 8% of magnesium powder and 8% of aluminum powder; yellow: materials containing sodium salt; the outer layer is a flame slow combustion delaying layer, and is designed according to zero oxygen balance, the consumption is 15-45% of the weight of the bright beads, and the outer layer comprises the components in percentage by mass of 0-86.2% of potassium nitrate, 0-84.2% of ammonium dichromate, and 13.8-15.8% of an adhesive. The smokeless fireworks bright beads have the advantages of being high in effective binding force, simple in technology, free from new equipment, little in smog, good in ornamental effect, high in promotion and application value, and the like.
Owner:浏阳市达丰出口花炮厂
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