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A high-temperature creep-resistant molybdenum plate doped with K and Si elements and its preparation method

A technology of anti-creep and molybdenum plate, which is applied in the high-temperature creep-resistant molybdenum plate of Si element and its preparation, and the field of doping K, which can solve the problems of environmental interference and difficulty in exerting the high-temperature creep resistance of molybdenum plate. Achieve the effects of reducing doping types, good high temperature creep resistance, and improving production costs

Active Publication Date: 2018-06-01
安泰天龙钨钼科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many types of elements, which are easy to cause interference to the use environment
[0006] In the current technology, almost only stress relief annealing or one-time recrystallization annealing is performed on the rolled slab. Such a metallographic structure is difficult to exert the high temperature creep resistance of this molybdenum plate.

Method used

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  • A high-temperature creep-resistant molybdenum plate doped with K and Si elements and its preparation method
  • A high-temperature creep-resistant molybdenum plate doped with K and Si elements and its preparation method
  • A high-temperature creep-resistant molybdenum plate doped with K and Si elements and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A high-temperature creep-resistant molybdenum plate with a thickness of 4mm is produced, wherein K: 0.03% and Si: 0.04% in the molybdenum plate by weight percentage. In this embodiment, the K source is KNO 3 , Si source is H 2 SiO 3 , Mo source is ammonium tetramolybdate.

[0037] The specific preparation method is as follows:

[0038] (1) Considering the volatilization during reduction and sintering, K and Si are doped at 0.05% and 0.06%, respectively. KNO 3 、H 2 SiO 3 The weight ratio with ammonium tetramolybdate is: 0.2247:0.2738:200.

[0039] (2) Weigh 0.2247kg KNO respectively 3 , 0.2738 kg H 2 SiO 3 Formulated with KNO 3 、H 2 SiO 3 The mixed solution was diluted to 20L, poured into the doping solution tank of the double-cone vacuum drying doping pot, and set aside. 200kg ammonium tetramolybdate is loaded into the doping pot, and then the doping pot is started to rotate. Use the pressure of the air compressor to spray the mixed solution into the dopi...

Embodiment 2

[0048] A high-temperature creep-resistant molybdenum plate with a thickness of 2.5mm is produced, wherein K: 0.02% and Si: 0.03% in the molybdenum plate by weight percentage. In this embodiment, the K source is KNO 3 , Si source is H 2 SiO 3 , Mo source is ammonium tetramolybdate.

[0049] The specific preparation method is as follows:

[0050] (1) Considering the volatilization during reduction and sintering, K and Si were doped at 0.04% and 0.05%, respectively. KNO 3 、H 2 SiO 3 The weight ratio with ammonium tetramolybdate is: 0.1947:0.2417:200.

[0051] (2) Weigh 0.1947kg KNO respectively 3 , 0.2417kg H 2 SiO 3 Formulated with KNO 3 、H 2 SiO 3 The mixed solution was diluted to 18L, poured into the doping solution tank of the double-cone vacuum drying doping pot, and set aside. 200kg ammonium tetramolybdate is loaded into the doping pot, and then the doping pot is started to rotate. Use the pressure of the air compressor to spray the mixed solution into the do...

Embodiment 3

[0060] A high-temperature creep-resistant molybdenum plate with a thickness of 1 mm is produced, wherein K: 0.01% and Si: 0.01% are contained by weight percentage. In this embodiment, the K source is KNO 3 , Si source is H 2 SiO 3 , Mo source is ammonium tetramolybdate.

[0061] The specific preparation method is as follows:

[0062] (1) Considering the volatilization during reduction and sintering, K and Si are doped at 0.03% and 0.03%, respectively. KNO 3 、H 2 SiO 3 The weight ratio with ammonium tetramolybdate is: 0.1498:0.1611:200.

[0063] (2) Weigh 0.1498kg KNO respectively 3 , 0.1611 kg H 2 SiO 3 Formulated with KNO 3 、H 2 SiO 3 The mixed solution was diluted to 18L, poured into the doping solution tank of the double-cone vacuum drying doping pot, and set aside. 200kg ammonium tetramolybdate is loaded into the doping pot, and then the doping pot is started to rotate. Use the pressure of the air compressor to spray the mixed solution into the doping pot un...

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Abstract

The invention relates to a high-temperature creep-resistant Mo (Molybdenum) plate doped with K (Potassium) and Si (Silicon) elements and a preparation method thereof. The preparation method comprises the following steps of 1, respectively weighing a required K source and a required Si source according to the contents of K and Si in the Mo plate, and performing preparation to obtain a mixed solution; 2, uniformly mixing the mixed solution obtained in the step 1 with a Mo source, and performing drying to obtain a doped Mo source; 3, performing reduction treatment on a mixture obtained in the step 2 to obtain doped Mo powder; 4, performing compression, sintering and rolling treatment on the doped Mo powder obtained in the step 3 to obtain a doped Mo plate; and 5, performing annealing treatment on the doped Mo plate obtained in the step 4 to obtain a Mo-K-Si high-temperature creep-resistant Mo plate with the thickness being 0.5 to 4mm. The high-temperature creep-resistant Mo plate provided by the invention has the advantages that the material has very high high-temperature creep-resistant performance; the creep-resistant performance at a temperature below 1900 DEG C is much better than that of pure Mo; and the Mo plate can be used as a high-temperature sintering setter plate or a structural component in a high-temperature furnace.

Description

technical field [0001] The invention relates to a production process of a doped molybdenum plate with extremely high-temperature creep resistance performance, in particular to a high-temperature creep-resistant molybdenum plate doped with K and Si elements and a preparation method thereof, belonging to the field of molybdenum plate material preparation . Background technique [0002] With the development of industrial technology and material technology, more and more occasions put forward requirements on the high temperature creep resistance of materials above 1500°C, for example, setter plates for nuclear fuel rods, high temperature ceramic setter plates, sintered boats, etc. . Tungsten and molybdenum materials have extremely high melting points and excellent chemical corrosion resistance. They can not be melted in these environments, but they are easy to deform under the action of long-term gravity or thermal stress, thus affecting the performance of equipment or Dimensi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C27/04C22C1/04B22F9/22B22F3/04B22F3/10B22F3/24C22F1/18
CPCB22F3/04B22F3/10B22F3/24B22F9/22B22F2003/248B22F2998/10C22C1/045C22C27/04C22F1/18
Inventor 钟铭韩蕊蕊董建英高欣海刘亚梅
Owner 安泰天龙钨钼科技有限公司
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