Organic electroluminescent device and method for preparing same
An electroluminescent device and luminescent technology, which are applied in organic light-emitting devices, organic light-emitting device manufacturing/processing, organic light-emitting device structures, etc., can solve problems such as low luminous efficiency, organic layer damage, easy quenching, etc., and achieve improved Effects of luminous efficiency, improvement of conductivity, and increase of transparency
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preparation example Construction
[0036] The preparation method of the organic electroluminescent device 100 according to an embodiment includes the following steps:
[0037] In step S110 , a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 are sequentially formed on the surface of the anode 10 .
[0038] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO.
[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pre-treated. The pre-treatment includes: subjecting the anode 10 to photolithography, cutting it into a required size, using detergent, deionization Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .
[0040] The hole i...
Embodiment 1
[0056] The structure prepared in this example is ITO / MoO 3 / NPB / Alq 3 / Bphen / LiF / PO15:Mg / Mg:TiO 2 / Al:Ca organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0057] First, the ITO is subjected to photolithography, and then cut into the required size, and then ultrasonicated with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface; after cleaning, the conductive substrate is cleaned. Appropriate treatment: oxygen plasma treatment, treatment time is 5min, power is 30W; vapor deposition hole injection layer, material is MoO 3 , the thickness is 60nm; the vapor deposition hole transport layer, the material is NPB, the thickness is 50nm; the vapor deposition light-emitting layer, the material is BCzVBi, the thickness is 30nm; the vapor deposition electron transport layer, the material is Bphen, the thickness is 160nm; ...
Embodiment 2
[0064] The structure prepared in this example is AZO / MoO 3 / TCTA / ADN / Bphen / CsF / TAZ:Sr / Sr:TiO 2 / Ag:Mg organic electroluminescent device.
[0065] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes in order to remove organic pollutants on the glass surface; evaporation hole injection layer: the material is MoO 3 , the thickness is 80nm; the vapor deposition hole transport layer: the material is TCTA, the thickness is 60nm; the vapor deposition light-emitting layer: the selected material is ADN, the thickness is 5nm; the vapor deposition electron transport layer, the material is Bphen, the thickness is 200nm; Electron injection layer is plated, the material is CsF, and the thickness is 10nm; the cathode is evaporated, and the first doped layer is prepared by evaporation on the surface of the electron injection layer by means of thermal resistance evaporation, and the material is TAZ:Sr, the mass ratio of TAZ and Sr is 10:1,...
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