The application provides a MEMS structure and a preparation method thereof, and a MEMS piezoelectric
microphone. The preparation method comprises the following steps: sequentially depositing a lower
electrode layer, a piezoelectric layer and an upper
electrode layer on a front surface of a substrate;
etching the upper
electrode layer and the upper piezoelectric layer from top to bottom to reserve the inner upper electrode layer and the upper piezoelectric layer; and performing deep
silicon etching on a back surface of the substrate until the lower electrode layer is reached to form a back cavity of the substrate. The longitudinal section of the piezoelectric layer after
etching is in a "convex" shape, the
neutral plane of the piezoelectric layer is not coincided with the
geometric symmetry plane, the
neutral plane is a plane in the piezoelectric layer where the stress and strain are 0, and the
geometric symmetry plane is a plane extending along the horizontal direction through the midpoint in the thickness direction of the piezoelectric layer. In the application, the
neutral plane is not coincided with the original
geometric symmetry plane, the symmetry in the thickness direction is broken, the sensitivity of the structure is greatly improved, the difficulty of adjusting the process parameters to control the
residual stress in the structure is reduced, and the accuracy of quantifying the
residual stress is improved.