Semiconductor light emitting diode and manufacturing method thereof

Abstract

The invention discloses a semiconductor light emitting diode and manufacturing method thereof. The structure and the semiconductor light emitting diode manufactured by adopting the manufacturing method can improve the light emitting efficiency and the light emitting strength. To achieve the purpose, the semiconductor light emitting diode comprises a substrate, a buffering layer and a first semiconductor layer with a first conductivity type, and a multi-quantum well has an active layer of a V-shaped pit, a Al quantum dot / a AlN nanorod / a Ga quantum dot / a GaN nanorod with a multi-cycle, a second semiconductor layer of a second conductivity layer and a contact layer; the portion of V-shaped pits corresponding to the lower surface, the center and the upper surface of the quantum well of the active layer has the Al quantum dot / the AlN nanorod / the Ga quantum dot, and the thickness in each cycle is identical to that of the quantum well; the portion of the V-shaped pit of a barrier layer of the quantum well has a GaN nanorod, and the thickness of each cycle is identical to the barrier layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to the field of nitride semiconductor light-emitting diodes and manufacturing methods. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride semiconductor light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. Because there are defects in the bottom layer of nitride semiconductor light-emitting diodes, V-shaped pits (V-pits) will be formed when the defects extend when growing quantum wells. The potential barrier of the side wall of the V-shaped pit is larger than the potential barrier of the multiple quantum wells, which makes it difficult for electrons to transition into the defect non-radiative recombination center of the V-shaped pit. At the same time, the side walls of the V-shaped pit can reflect the light emitted by the multiple quantum wells. Change the luminou...

AI Technical Summary

Problems solved by technology

The opening of the V-shaped pit of the traditional multi-quantum well is upward. As the number of quantum wells increases, the opening of the V-shaped pit becomes larger, but the opening angle and shape are difficult to control. Too large openings will produce a large number of non-radiative recombination centers. Causes a decrease in brightness, and finally the opening angle and shape that are difficult to control will greatly affect the luminous efficiency of the LED

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