The invention discloses a method for improving the manufacturing yield of an LED chip. The method comprises the steps: firstly carrying out the growth of a wafer epitaxial layer, then carrying out thecorrosion of a second highly-doped pGaP window layer to form an exposed region, and then depositing an oxide film; and then evaporating an ITO film on the surface of the epitaxial layer, continuouslymanufacturing a P-surface electrode and an N-surface electrode, finally evaporating a protective film on the surface of the P-surface electrode, then performing cutting, ultrasonically removing the protective film through hot water after cutting, and finally cleaning and expanding the film of the chip to form independent single core particles. According to the method, preparation of the LED chipis effectively achieved, the light-emitting effect of the chip is improved, MgF2/CaF2 films alternately grow on the surface of the wafer, the light-emitting surface is smooth, the problems that in thecutting process, a diamond knife makes direct contact with an ITO film, and corner breakage, cracks and the like are likely to be generated are solved, the product quality and reliability are greatlyimproved, chippings and water stain and dirt residues in the cutting process are avoided, the product appearance yield is increased, and high practicability is achieved.