Method for improving manufacturing yield of LED chip

Abstract

The invention discloses a method for improving the manufacturing yield of an LED chip. The method comprises the steps: firstly carrying out the growth of a wafer epitaxial layer, then carrying out thecorrosion of a second highly-doped pGaP window layer to form an exposed region, and then depositing an oxide film; and then evaporating an ITO film on the surface of the epitaxial layer, continuouslymanufacturing a P-surface electrode and an N-surface electrode, finally evaporating a protective film on the surface of the P-surface electrode, then performing cutting, ultrasonically removing the protective film through hot water after cutting, and finally cleaning and expanding the film of the chip to form independent single core particles. According to the method, preparation of the LED chipis effectively achieved, the light-emitting effect of the chip is improved, MgF2 / CaF2 films alternately grow on the surface of the wafer, the light-emitting surface is smooth, the problems that in thecutting process, a diamond knife makes direct contact with an ITO film, and corner breakage, cracks and the like are likely to be generated are solved, the product quality and reliability are greatlyimproved, chippings and water stain and dirt residues in the cutting process are avoided, the product appearance yield is increased, and high practicability is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a method for improving the yield rate of LED chip manufacturing. Background technique [0002] Traditional incandescent lamps consume a lot of energy and have a short lifespan. Today, when global resources are in short supply, their production has been gradually banned by governments of various countries. The replacement products are electronic energy-saving lamps. Although electronic energy-saving lamps improve energy-saving effects, they pollute the environment due to the use of many heavy metal elements, which is contrary to the general trend of environmental protection. With the rapid development of LED technology, LED lighting has gradually become the best choice for new green lighting. LED is a semiconductor device that uses carrier recombination to emit light. LED chips have many advantages such as low power consumption, pure chromaticity, long life, smal...

AI Technical Summary

Problems solved by technology

GaAs-based LED wafers are generally cut with a diamond knife. During the saw blade cutting process, the diamond knife will be in direct contact with the ITO film, which will cause serious physical damage to the LED wafer during the cutting process, especially in the cutting aisle. Edges are prone to edge chipping, cracks, corner chipping, oblique cracks, etc.

At the same time, the debris accompanying the cutting will be adsorbed to the surface of the electrode, resulting in abnormal surface contamination. It is difficult to remove by flushing water and two-fluid cleaning machine during the cutting process, which greatly affects the cutting yield.

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