The invention discloses an inverted high-voltage light emitting diode (LED) chip electrode and a chip fabrication method. The chip electrode comprises a substrate and an epitaxial layer, wherein the epitaxial layer comprises a P-type GaN layer, a quantum well region and an N-type GaN layer, unit chips which are independent to each other are arranged on the epitaxial layer, each unit chip forms a patterned P-type GaN platform and a patterned N-type GaN platform, more than two groups of unit chips form a high-voltage chip unit, the P-type GaN platform and the N-type GaN platform both adopt a metal electrode to interconnect, the metal electrode comprises a P-type metal reflection electrode, a P-N interconnected electrode, an N-type metal electrode and a bonding pad electrode, and the side wall from the P-type GaN platform and the N-type GaN platform and a deep groove region where the unit chips are interconnected adopt a DBR structure to connect. With the inverted high-voltage LED chip electrode disclosed by the invention, the light emergent efficiency of the chip is improved, the contact area of a bonding pad for chip package is expanded, the stability is improved, the current clustering effect is reduced, moreover, wireless welding is achieved, the cooling effect is good, cost is favorably reduced, and light attenuation is reduced.