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Simple manufacturing method of high-efficient light emitting diode chip

A technology of light-emitting diodes and manufacturing methods, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as long chip process time, increased chip cost, and increased defect rate, and achieve the goal of simplifying the chip process and improving quality Effect

Active Publication Date: 2016-03-23
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional manufacturing methods usually require five steps of photolithography, resulting in a longer chip process time, higher chip costs and increased defect rates.

Method used

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  • Simple manufacturing method of high-efficient light emitting diode chip
  • Simple manufacturing method of high-efficient light emitting diode chip
  • Simple manufacturing method of high-efficient light emitting diode chip

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Embodiment Construction

[0036] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0037] Such as Figure 1 to Figure 9 As shown, the present invention provides a simple method for manufacturing a high-efficiency light-emitting diode chip, comprising the following steps:

[0038] S01: providing a substrate, and forming an epitaxial light emitting structure on the substrate;

[0039] S02: Evaporating a non-conductive material on the ohmic contact layer as a current blocking layer;

[0040] S03: Use a standard mask and photolithography process to define the N-type electrode production area and cutting lines on the surface of the curre...

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Abstract

The invention discloses a simple manufacturing method of a high-efficient light emitting diode chip. The method comprises the following steps that an epitaxial luminescence structure is formed on a substrate; a non-conducting material is evaporated on an ohmic contact layer so as to be taken as a current barrier layer; silicon dioxide is evaporated on an epitaxial luminescence structure surface and a side surface; all the photoresists on the surface are removed and evaporation is performed on the surface to form an ITO conducting layer; an etchant solution is used to remove the silicon dioxide on the epitaxial luminescence structure side surface and an N-type electrode manufacturing area; silicon nitride is evaporated on a chip surface, a side surface and an electrode isolation groove between an N-type electrode and an epitaxial layer to form a chip protection layer and an electrode isolation layer; a P-type electrode manufacturing area and the N-type electrode manufacturing area are defined on the chip surface; the photoresist is evaporated on and peeled off the P-type electrode manufacturing area and the N-type electrode manufacturing area; the chip is splintered and is separated into independent chip grains. By using method in the invention, a chip manufacturing technology is effectively simplified; chip process time is shortened; chip manufacturing cost is reduced and chip quality is increased.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, and in particular provides a simple method for manufacturing high-efficiency light-emitting diode chips. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and have been developed rapidly as the main light source. In recent years, the application fields of light-emitting diodes have expanded rapidly. With the increasingly fierce competition in the LED industry, improving the brightness of light-emitting diodes and reducing costs has become an important direction. [0003] In order to improve the brightness and reliability of the chip, the current traditional chip manufacturing process includes making a current blocking layer (CurrentBlockingLayer) under the P-type electrode, evaporating N and P electrodes, and making a chip protection layer (PV). However, traditional manufacturing methods usually requir...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/005H01L33/145
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足陈亮
Owner XIAMEN CHANGELIGHT CO LTD
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