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Inversed high-voltage light emitting diode (LED) chip electrode and chip fabrication method

A LED chip, high-voltage technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of motor blocking light-emitting drive life, uneven current diffusion, poor stability, etc., to reduce the current from the convergence effect, reduce light Decrease, enhance the effect of stability

Active Publication Date: 2016-03-30
ZHEJIANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Semiconductor solid-state light-emitting devices GaN-based LED light-emitting diodes are widely used in various lighting fields due to their small size, low power consumption, long life, good response block, and good stability. It has uneven current diffusion, poor heat dissipation, motor blocking light and is greatly affected by the life of the light source drive, resulting in low light efficiency and relatively poor stability

Method used

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  • Inversed high-voltage light emitting diode (LED) chip electrode and chip fabrication method
  • Inversed high-voltage light emitting diode (LED) chip electrode and chip fabrication method
  • Inversed high-voltage light emitting diode (LED) chip electrode and chip fabrication method

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Embodiment 1

[0049] A method for manufacturing a flip-chip high-voltage LED chip as described above includes the following steps:

[0050] (1) Treat the substrate

[0051] Thinning, grinding and CMP polishing the back of the epitaxial wafer substrate grown on GaN to reduce its thickness from 430 μm to 180 μm, surface flatness (TTV) ≤ 50 μm, warpage (BOW) ≤ 50 μm, average roughness Degree S a ≤0.2nm;

[0052] (2) Clean the epitaxial layer

[0053] Pickle the light gallium nitride epitaxial wafer on which the chip is made, and wash it with aqua regia (HCl: HNO 3 =3:1) Imaging and etching for 30 minutes, mainly cleaning and removing metal pollutants on the wafer surface; 2 SO 4 :H 2 o 2 = 1:4 wash at room temperature for 5 minutes, mainly to remove surface organic contamination; then use HF:H 2 O (DI, ultrapure water) = 1: 1 to remove the oxide layer on the wafer surface, and finally rinse and dry with deionized water;

[0054] (3) P-type gallium nitride surface roughening

[0055] ...

Embodiment 2

[0070] A method for manufacturing a flip-chip high-voltage LED chip as described above includes the following steps:

[0071] (1) Treat the substrate

[0072] Thinning, grinding and CMP polishing the back of the epitaxial wafer substrate grown on GaN to reduce its thickness from 430 μm to 180 μm, surface flatness (TTV) ≤ 50 μm, warpage (BOW) ≤ 50 μm, average roughness Degree S a ≤0.2nm;

[0073] (2) Clean the epitaxial layer

[0074] Pickle the light gallium nitride epitaxial wafer on which the chip is made, and wash it with aqua regia (HCl: HNO 3 =3:1) Imaging and etching for 30 minutes, mainly cleaning and removing metal pollutants on the wafer surface; 2 SO 4 :H 2 o 2 = 1:4 wash at room temperature for 5 minutes, mainly to remove surface organic contamination; then use HF:H 2 O (DI, ultrapure water) = 1: 1 to remove the oxide layer on the wafer surface, and finally rinse and dry with deionized water;

[0075] (3) Surface roughening of P-type gallium nitride

[007...

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Abstract

The invention discloses an inverted high-voltage light emitting diode (LED) chip electrode and a chip fabrication method. The chip electrode comprises a substrate and an epitaxial layer, wherein the epitaxial layer comprises a P-type GaN layer, a quantum well region and an N-type GaN layer, unit chips which are independent to each other are arranged on the epitaxial layer, each unit chip forms a patterned P-type GaN platform and a patterned N-type GaN platform, more than two groups of unit chips form a high-voltage chip unit, the P-type GaN platform and the N-type GaN platform both adopt a metal electrode to interconnect, the metal electrode comprises a P-type metal reflection electrode, a P-N interconnected electrode, an N-type metal electrode and a bonding pad electrode, and the side wall from the P-type GaN platform and the N-type GaN platform and a deep groove region where the unit chips are interconnected adopt a DBR structure to connect. With the inverted high-voltage LED chip electrode disclosed by the invention, the light emergent efficiency of the chip is improved, the contact area of a bonding pad for chip package is expanded, the stability is improved, the current clustering effect is reduced, moreover, wireless welding is achieved, the cooling effect is good, cost is favorably reduced, and light attenuation is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting lighting devices, in particular to a flip-chip high-voltage LED chip electrode and a chip manufacturing method. Background technique [0002] Semiconductor solid-state light-emitting devices GaN-based LED light-emitting diodes are widely used in various lighting fields due to their small size, low power consumption, long life, good response block, and good stability. It has the characteristics of uneven current diffusion, poor heat dissipation, motor blocking light emission and being greatly affected by the driving life of the light source, resulting in low light efficiency and relatively poor stability. With the rise of the LED chip manufacturing industry and the development of scientific research, a new generation of chips is required to have high performance, low cost and pay more attention to the stability of the device. Therefore, high-voltage flip-chip LED chips have emerged as th...

Claims

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Application Information

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IPC IPC(8): H01L33/52H01L33/62H01L33/64H01L33/60H01L33/00
CPCH01L2224/24137H01L33/52H01L33/005H01L33/60H01L33/62H01L33/64H01L2933/005
Inventor 李文忠马云方允樟金林枫叶慧群
Owner ZHEJIANG NORMAL UNIVERSITY
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