252results about How to "Improve packaging yield" patented technology

The invention discloses a flat non-lead packaging part and a production method thereof. The flat non-lead packaging part comprises a lead frame carrier, wherein the carrier is adhered with an IC chip. The front side of the lead frame carrier is provided with pits. The periphery of the front side of the lead frame carrier is provided with two circles of waterproof grooves. The back side of the lead frame carrier is provided two circles of anti-overflow grooves. The production method comprises the processes of washer thinning and slicing, core loading, press welding, plastic package, plating, printing and cutting and coiling. The method strengthens the bonding forces between the adhesive and the lead frame carrier and the IC chip and eliminates and reduces the rate of a lamination defect generated on the surface of the IC chip. The two circles of waterproof grooves are provided on the periphery of the carrier, the plastic packaging materials are embedded in the grooves so as to prevent moisture from entering the chip. The two circles of anti-overflow grooves arranged on the edge of the carrier have functions of preventing the lamination defect, moisture and material overflow. The method has the advantages of high rate of finished product, good reliability and convenient use, and effectively improves the reliability and excellent packaging rate of products.

The invention provides a packaging method of a piezoelectric acoustic wave device. The packaging method comprises the following steps: providing a bare chip, wherein multiple metal ports are arrangedon the surface of the bare chip, and the multiple metal ports are distributed on the outer side of an effective active region of the bare chip; forming a sealing wall surrounding the effective activeregion on the surface of the bare chip; forming conductive convex blocks on the multiple metal ports of the bare chip; providing a base plate, wherein a first welding pad corresponding to the multiplemetal ports of the bare chip is arranged on one surface of the base plate, and a second welding pad is arranged on the other surface of the base plate; electrically connecting the conductive convex blocks of the bare chip with the first welding pad of the base plate through the flip-chip process; and forming a sealing outer shell, covering the bare chip, on the base plate. Correspondingly, the invention further provides a packaging structure of the piezoelectric acoustic wave device. By implementation of the packaging method of the piezoelectric acoustic wave device and the packing structureof the piezoelectric acoustic wave device, the instability of a traditional sealing process is transferred to the surface of the base plate, so that the effective active region of the piezoelectric acoustic wave device is effectively protected.

The invention relates to a method for manufacturing an inverted LED chip, which comprises the following steps of: forming a light reflection layer on the surface of a P type ohmic contact layer; forming an N type electrode forming region; forming an insulating medium film; forming a P type electrode region and an N type electrode region; forming a P type electrode and an N type electrode, wherein the N type electrode is of a step structure, the lower end of the N type electrode passes through the insulating medium film to be connected with the N type layer, the upper end of the N type electrode is extended to the P type electrode, and the N type electrodes at the upper end have common soldering surface of the same height or similar height; and fixing the P type electrode and the N type electrode to the respective PCB (Printed Circuit Board) boards in a soldering way. The common soldering surface of the same height or similar height is defined for the N type electrodes of the inverted LED chip in the method, so that the packaging yield of the LED inversion technology is increased and the pseudo soldering or unsoldering situation of the electrodes is avoided.

The invention relates to the technical field of meter packaging machinery, in particular to a meter packaging machine and a meter packaging method thereof. The meter packaging machine comprises a frame, a drive device, a control mechanism and a die assembling module. The drive device is fixedly mounted on the upper portion of the frame. The die assembling module is disposed on the lower portion of the drive device. The control mechanism controls the drive device to operate. The die assembling module is driven by the drive device to perform die assembling. The die assembling module comprises an upper pressing die and a lower die. The upper pressing die is connected with the drive device. The lower die is fixedly mounted on the lower portion of the frame. By the meter packaging machine, meter elements can be placed in a sleeve conveniently before die assembling of the upper pressing die and the lower die, axial alignment of the meter elements can be achieved fast and accurately, and according packaging yield and efficiency can be increased. In addition, during packaging, attachment of dust or impurities to a glass cover plate can be avoided.

The invention discloses a material packaging machine, which is used for packaging materials in a packaging bag, and comprises a bag-holding device, a compaction device, a flattening device and a clamping device, wherein the bag-holding device is used for clamping an open edge of the packaging bag, so that materials are filled in the packaging bag; the compaction device is used for extruding the materials in the packaging bag; the flattening device is used for pulling the open edge into a flat shape; and the clamping device is used for clamping the downside part of the open edge. In the invention, the open edge of the packaging bag is flattened by using the flattening device, and the clamping device is matched to clamp the packaging bad with a flattened open edge, in such a way, the packaging bag can be sealed smoothly and perfectly, and a situation of greatly improving the packaging yield of products can be ensured.

The invention relates to an adapter plate structure, in particular to an embedded type TSV adapter plate structure for numerous-layer wiring, which belongs to the technical field of integrated circuit packaging. According to the technical scheme provided by the invention, the embedded type TSV adapter plate structure for numerous-layer wiring comprises an adapter plate body, wherein a wiring adapter plate groove is formed in the adapter plate body in a concave manner, a wiring adapter plate is arranged in the wiring adapter plate groove, numerous-layer wires are arranged on the wiring adapter plate, the wiring adapter plate is electrically connected with an adapter plate upper redistribution layer on the upper surface of the adapter plate body by means of the numerous-layer wires, the adapter plate upper redistribution layer is electrically connected with an adapter plate lower redistribution layer on the lower surface of the adapter plate body by means of filling connectors filled in through vias of the adapter plate body, a plurality of solder balls are arranged on the adapter plate lower redistribution layer, and the solder balls are electrically connected with the adapter plate lower redistribution layer. The embedded type TSV adapter plate structure can effectively increase the number of wiring layers, realizes the high-density chip scale packaging and system packaging, and is safe and reliable.

A packaging method comprises the following steps of: preparing a finely pulverized powder, preparing a finely pulverized powder paste by the use of the finely pulverized powder, coating a packaging wire of cover lens by with the finely pulverized powder paste and glass paste, presintering the coated cover lens in vacuum, folding the cover lens which is presented in vacuum with a glass substrate, and carrying out laser scanning and packaging on the folded combination of the cover lens and the glass substrate. By the adoption of the packaging method, height inhomogeneities of the presentered packaging wire can be controlled within an ideal range and requirements on laser power when packaging is obviously reduced.

Provided are a wafer-level packaging method for a semiconductor and a semiconductor packaging part. The wafer-level packaging method for the semiconductor comprises the following steps that a first wafer with one or a plurality of storage chip units is provided, each storage chip unit is provided with a storage array circuit and a periphery circuit, and a first cut channel is arranged between the adjacent storage chip units; a second wafer provided with one or more logical chip units is provided, the area of each logical chip unit corresponds to the area of N storage chip units, wherein N is a natural number larger than or equal to 1, a second cut channel is arranged between the adjacent logical chip units, and the second cut channels are matched with the first cut channels on the peripheries of the N storage chip units; the first wafer and the second wafer are bonded, and the logical chip units are correspondingly matched with the N storage chip units. By means of the wafer-level packaging method, the packaging application range of the storage wafers is enlarged.

A single-fiber bidirectional component comprises a substrate, a tube core sleeve, a receiver, an adapter, a laser device and an optical filter. The laser device is connected with the tube core sleeve, the optical filter is arranged in the substrate, a first connecting hole and a second connecting hole which are coaxial are arranged on the substrate, the tube core sleeve is inserted into the first connecting hole, the inner diameter of the first connecting hole is larger than the outer diameter of the tube core sleeve, and the adapter is inserted into the second connecting hole. Light emitted from the laser device is coupled by the optical filter and enters the adapter, and light entering the adapter is reflected by the optical filter and further enters the receiver. In a packaging process of the single-fiber bidirectional component, coupling adjustment is carried out at first so as to obtain proper optical power, and then packaging is carried out. During coupling adjustment, the laser device can be longitudinally adjusted while the adapter is transversely adjusted due to the fact that the inner diameter of the first connecting hole is larger than the outer diameter of the tube core sleeve, the adapter does not need to be longitudinally adjusted, coupling of a receiving end is unaffected, receiving coupling can be realized easily, and packaging yield is high.

The invention discloses a packaging method and packaging structures. The packaging method includes the steps of providing a plurality of individual image sensing chips, wherein each image sensing chip is provided with an image sensing area and a bonding pad surrounding the image sensing area; providing a PCB substrate, wherein a metal layer is formed on the surface of the PCB substrate; reversedly arranging the image sensing chips on the PCB substrate, wherein the bonding pads are electrically connected with the metal layer; forming a plastic sealing layer which covers the surface of the metal layer and the surfaces of the image sensing chips; forming a through hole, exposed out of the surface of the metal layer, in the plastic sealing layer; forming a welding protrusion which fully fills the through hole, wherein the top of the welding protrusion is higher than the surface of the plastic sealing layer; cutting the PCB substrate along the area of cutting lines to form the multiple single packaging structures. The packaging process is simple, the packaging structures have good packaging performance and high reliability, the packaging process can be partly conducted through the PCB manufacturing technology, and packaging process difficulty and packaging cost are reduced.

The invention provides a packaging structure and a packaging method of a fingerprint recognition chip. The packaging structure comprises a silicon substrate, a re-wiring layer formed on the silicon substrate, metal leading wires welded on the re-wiring layer through a wire-welding process, the fingerprint recognition chip arranged above the re-wiring layer through metal welding points, and a packaging material covering the fingerprint recognition chip, wherein the front surface of the fingerprint recognition chip is arranged towards the re-wiring layer, and the metal leading wires are exposed out of the packaging material. According to the packaging structure and the packaging method, the fingerprint recognition chip is packaged in a fan-out manner, compared with conventional packaging of other fingerprint recognition chips, the cost is low, the thickness is small, and the yield is high; and by employing the wire-welding process, the process temperature can be greatly reduced, and the application range of the process is extended.

The invention provides an image sensor module and a formation method thereof, wherein the image sensor module comprises a substrate which is provided with a frontage and a back opposite to the frontage, a buffer layer located on the frontage of the substrate and a metal layer located on the surface of the buffer layer, a die inverted above the substrate, a welding projection located on the surface of the metal layer, and a formed lens assembly, wherein the die is provided with an image sensing region and a bonding pad surrounding the image sensing region, and the bonding pad is electrically connected with the metal layer; the lens assembly comprises a mirror base and a lens, and the lens is connected with the back of the substrate by virtue of the mirror base. The performance and the reliability of the image sensor module are improved.

Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

The invention provides a polaroid packaging and fixing device. The polaroid packaging and fixing device comprises a base and an upper cover used for covering the base. Pluggable fixed blocking pillars used for being connected with the upper cover are arranged at the four corners of the base. Sliding baffles used for fixing a polaroid and fixed baffles used for fixing the polaroid are arranged in the base. By means of the polaroid packaging and fixing device, the links of cleaning end faces, putting the polaroid into an aluminum foil bag for vacuum pumping, then putting the polaroid into a tray, putting the tray into a carton and the like are removed, the polaroid packaging working efficiency is improved, and the packaging yield can also be increased; and meanwhile the device can be directly put on a machine table to be subjected to wire feeding for use at a client end, the trouble of demounting the carton, demounting the aluminum foil bag and the tray by putting the carton, the demounting aluminum foil bag and the tray on the machine table pack by pack is saved, the wire feeding working efficiency of the client end is improved, the packaging cost is reduced, and the packaging yield is increased.

Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current- voltage properties.

The invention relates to an LED chip. The LED chip adopts the structure that an N-type electrode (22) adopts a staircase structure; the lower end of the N-type electrode (22) penetrates an insulating dielectric film (13) to be connected with an N-type layer (3); the middle part of the N-type electrode (22) is attached to the insulating dielectric film (13) at a vertical part; the upper end of the N-type electrode (22) is positioned above the insulating dielectric film (13) at the top, and extends towards the position of a P-type electrode (21); and the upper end of the N-type electrode (22) is connected with a second PCB board (23), and the N-type electrode (22) at the upper end and the P-type electrode (21) are provided with common soldering surfaces of which heights are equal or approximately equal. As the N-type electrode and the P-type electrode of the flip LED chip are provided with the common soldering surfaces of which heights are equal or approximately equal, the yield of packaging in the inverted-chip process of the LED chip is increased, and the phenomenon of inveracious soldering or desoldering of the electrode is avoided.

The invention relates to a manufacturing method of an LED (light-emitting diode) chip with an inverted structure. The LED chip comprises an N-type electrode formation region and a P-type electrode formation region, wherein the N-type electrode formation region comprises a substrate, a buffer layer, an N-type layer, an N-type respective limiting layer, an active region layer, a P-type respective limiting layer, a P-type layer, a P-type ohmic contact layer, a light reflecting layer and an insulating film; one end face of an N-type electrode passes through the insulating film so as to be connected with the light reflecting layer, and the other end face of the N-type electrode is connected with a heating panel through a PCB (printed circuit board); the P-type electrode formation region comprise a substrate, a buffer layer, an N-type layer and the insulating film, one end of a P-type electrode passes through the insulating film so as to be connected with the N-type layer, and the other end of the P-type electrode is connected with the heating panel by virtue of the PCB; and the two end faces, respectively connected with the PCB, of the N-type electrode and the P-type electrode are positioned at a same horizontal plane. The manufacturing method provided by the invention has the advantages that the N-type electrode and P-type electrode of the LED chip are manufactured in the same surface, the package yield of a chip inversion process is increased, thereby avoiding the occurrence of the electrode rosin joint or sealed-off state.