32results about How to "Improve packaging yield" patented technology

The invention provides a low-warpage underfill adhesive for FC-BGA packaging, a preparation method thereof and a flip chip. The underfill adhesive comprises the following components in percentage by mass: 50%-60% of silicon dioxide, 24%-29% of epoxy resin, 16%-20% of a curing agent, 0.1%-0.2% of carbon black and 0.1%-0.2% of an accelerant. Wherein the epoxy resin is composed of high-purity bisphenol A epoxy resin, polyurethane modified epoxy resin and phenolic aldehyde modified epoxy resin. By adjusting the proportion of the high-purity bisphenol A epoxy resin, the polyurethane modified epoxy resin and the phenolic aldehyde modified epoxy resin and combining the curing agent and the accelerant, the stress of the underfill adhesive is integrally reduced, and the underfill adhesive with good fluidity and low warpage is obtained; therefore, the packaging yield and the packaging efficiency of chip packaging are improved.

The invention relates to the field of epoxy molding compounds, and discloses an epoxy molding compound as well as a preparation method and application thereof. The epoxy molding compound contains a heat-conducting filler, epoxy resin, a curing agent, a curing accelerator, a coupling agent, a bonding modifier, a flame retardant, a coloring agent, a release agent, hydroxyl-terminated silicone oil and a dispersing wetting agent. The heat-conducting filler contains aluminum oxide, crystalline silicon dioxide powder and molten spherical silicon dioxide powder; the bonding modifier is a triazole compound or a gallic acid compound; the weight ratio of the hydroxyl-terminated silicone oil to the heat-conducting filler to the bonding modifier is (1.5-4): (700-800): 1. The epoxy molding compound has the advantages of favorable molding process property, excellent heat-conducting property and high adhesive strength, and is suitable for being used as a packaging material of a fully-packaged power module.

A manufacturing method of a package substrate includes forming a heterogeneous layer on a substrate body, forming a first circuit layer on the heterogeneous layer, forming a dielectric layer on the heterogeneous layer, embedding the first circuit layer in the dielectric layer, performing a layer-adding circuit, removing the substrate body and the heterogeneous layer to make the depth of the first circuit layer consistent, and forming a second circuit layer on the substrate body. Therefore, a plurality of solder balls can be combined on the first circuit layer.

The utility model relates to the technical field of MEMS device packaging, and particularly discloses a strip-shaped clamp for an MEMS device, and the MEMS device comprises an MEMS sensor and a special integrated circuit needing to be subjected to an injection molding process; the strip-shaped clamp comprises a frame part and a central part; the central part comprises a plurality of parallel long strip parts which are arranged at intervals; the two ends of each long strip part in the plurality of long strip parts are respectively connected with the frame part so as to form a plurality of strip-shaped openings; the corners of the strip-shaped opening are arranged to be fillets; and under the condition that the MEMS device is arranged below the strip-shaped clamp, the strip-shaped opening is used for exposing an application-specific integrated circuit of the MEMS device so as to carry out an injection molding process, and the strip-shaped part is used for covering an MEMS sensor of the MEMS device. According to the strip-shaped clamp, the cleaning difficulty can be reduced, the manufacturing cost can be reduced, the influence of sputtered resin points in the injection molding process on the performance of the MEMS device can be effectively prevented, and the packaging yield of the MEMS device is effectively improved.

The present invention discloses a novel solar module flipping device, comprising: a frame, a packaging material accompanying tooling board, a packaging material accompanying tooling board transmission mechanism for conveying the packaging material accompanying tooling board, a packaging material conveying mechanism, a packaging material accompanying tooling board fixing mechanism, and a packaging material flipping mechanism. Through the above-mentioned method, the novel solar module flipping device of the present invention realizes the loading, flipping and unloading operations of the packaging material through the cooperation of multiple structures such as the flipping mechanism, ensures the accuracy of the solar cell operation process, and improves the packaging yield and efficiency of the module.

The invention relates to the technical field of X-ray flat panel detector manufacturing, in particular to an X-ray flat panel detector, a core assembly thereof and a packaging method of the core assembly, and the method comprises the steps: S1, arranging a detection chip on the upper end surface of a substrate, carrying out the conventional coupling, carrying out the routing processing, and pasting a bottom vacuum film on the bottom end surface of the substrate through a sealant; s2, sequentially arranging a scintillator and an upper vacuum film or sequentially arranging an optical fiber panel, the scintillator and the upper vacuum film on the upper end surface of the detection chip, and then carrying out edge sealing treatment on the upper vacuum film and the bottom vacuum film to form a cavity between the upper vacuum film and the bottom vacuum film; and S3, carrying out vacuumizing treatment on the formed cavity to enable the vacuum degree in the cavity to be in a range of 50 kPa to 100 kPa, and then, carrying out sealing treatment to complete packaging of the core assembly. According to the packaging method, the coupling performance and the coupling convenience of the core component can be well considered; the problems in the prior art are solved.

The invention relates to the technical field of airtight packaging, in particular to an optical window with solder balls. Comprising a substrate, an optical film, solder balls and a metal film, the optical film is plated in the middle of the substrate, the metal film is plated on the edge of the optical film, a non-plated film area is arranged between the metal film and the optical film, the solder balls are arranged on the metal film, and gas micro-circulation channels are formed among the solder balls. The optical film, the metal film and the solder balls are sequentially produced on the substrate, the solder balls are uneven, gas micro-circulation channels can be reserved for internal gas and external gas, the internal gas pressure and the external gas pressure can be kept stable when gas protection packaging is carried out, and the packaging yield is improved.

The invention relates to the technical field of chip packaging, in particular to a correction method for improving the packaging yield of a chipset, and the method comprises the steps: fixing the chipset to a controllable bearing platform, or fixing a plurality of chips to the controllable bearing platform, and forming the chipset; carrying out relative position detection on the chips in the same group of chip groups, and determining target chips of which the position offset exceeds a position precision threshold in the chip groups; and correcting the position of the target chip, so that the relative position between the chips in the chip set meets the position precision threshold. Based on the above scheme, the yield of chip group packaging can be improved.

This invention provides a glass substrate optoelectronic co-packaging structure and its fabrication method, addressing the technical problems of existing glass substrate-based optoelectronic co-packaging structures, such as easy mounting errors during assembly, poor structural stability, and easy displacement relative to the glass substrate during operation, resulting in transmission loss. The glass substrate optoelectronic co-packaging structure of this invention innovatively embeds optoelectronic integrated chips and integrated circuit chips within the glass substrate, and also incorporates a microbridge structure and a pluggable fiber array within the glass substrate. This not only reduces the overall volume of the packaging structure but also effectively improves the structural stability of each component, reducing failures caused by poor packaging or component detachment, and increasing packaging yield. More importantly, this design effectively ensures alignment accuracy, enabling precise docking between the optoelectronic integrated chip and the external optical signal array, achieving efficient and low-loss transmission of optical signals.

The invention provides a backside illuminated photodiode which can be applied to the technical field of photodiodes. The backside illuminated photodiode includes: a substrate; the first doped region is arranged on the front surface of the substrate; the second doped region is arranged on the front surface of the substrate, the second doped region and the first doped region are arranged at an interval, and the doping type of the second doped region is different from that of the first doped region; the first electrode is electrically connected with the first doped region; the first doped region is electrically connected with the first electrode, the second doped region is electrically connected with the second electrode, the second electrodes are electrically connected with the second doped region, the second electrodes are arranged at intervals along a first direction and a second direction, the first direction is perpendicular to the second direction, and the second electrodes are arranged to surround the first electrode and are separated from the first electrode. The invention also provides a detector.

The invention relates to a preparation method of a chip packaging structure. The preparation method of the chip packaging structure comprises the following steps: forming a plurality of holes extending into a silicon wafer on the surface of one side of the silicon wafer; filling the holes with a conductive material to form a plurality of metal columns; removing a part of height of the silicon wafer, taking the exposed part of the metal column as a target metal column, and taking the unexposed part of the metal column as an internal metal column; mounting a silicon bridge structure on the surface of the silicon wafer among the plurality of target metal columns; forming a first rewiring layer on one side of the silicon bridge structure back to the silicon wafer and one side of the target metal column back to the silicon wafer; the first redistribution layer is connected with the silicon bridge structure and the target metal column; and inversely arranging a plurality of chips on one side of the first rewiring layer back to the silicon wafer. According to the preparation method of the chip packaging structure, the metal column and the target metal column which are high in height and diameter proportion and high in stability can be prepared, high-density interconnection of the chip and the target metal column is achieved, and the chip packaging yield and the integration level of the chip packaging structure are improved.

This application relates to the field of light-emitting chip packaging technology, and discloses a method for repairing a display module, comprising: providing a display module to be repaired; the display module to be repaired includes a substrate, multiple light-emitting chips located on the substrate, and an encapsulation layer covering the multiple light-emitting chips, wherein the surface material of the encapsulation layer away from the substrate is a first epoxy resin, the first epoxy resin containing 30-100% by weight of a modified epoxy resin containing reversible covalent bonds, and the chip to be repaired being one of the multiple light-emitting chips; removing the encapsulation layer material on the chip to be repaired to form a hole, then removing the chip to be repaired and replacing it with the desired light-emitting chip, and then filling the hole with a second epoxy resin containing 30-100% by weight of the aforementioned modified epoxy resin; and performing a curing treatment and surface polishing treatment on the filled encapsulation layer to obtain a repaired display module. The display module repair method of this application can significantly improve the repairability and product yield of display modules, and has good application prospects.

The invention relates to the technical field of electronic chip packaging, in particular to an electronic chip processing mechanism which comprises a dispensing mechanism and a conveying mechanism, the dispensing mechanism is arranged above the conveying mechanism, the conveying mechanism comprises a supporting assembly and a transmission assembly, the transmission assembly is installed on the supporting assembly, a plurality of packaging boxes are arranged on the transmission assembly, and the packaging boxes are arranged on the supporting assembly. The packaging box is located below the dispensing mechanism, a containing space is formed in the packaging box, the two temperature control telescopic plate sets are oppositely arranged and arranged on the tops of the two opposite side walls of the packaging box correspondingly, and the two temperature control telescopic plate sets are used for oppositely stretching and abutting against each other to seal the containing space when heated. The electronic chip is dried after being dispensed in the packaging box, and the electronic chip does not need to be transferred to other drying equipment after being dispensed, so that the electronic chip is prevented from being polluted in the transfer process, and the packaging yield is improved.

The embodiment of the invention provides a dam substrate and a preparation method thereof. The preparation method of the dam substrate comprises the steps that at least one through hole penetrating through the thickness direction of a substrate body is formed in the substrate body; respectively forming a first photoresist pattern and a second photoresist pattern on the upper surface and the lower surface of the substrate body around the through hole; performing metal filling on the through hole, the first photoresist pattern and the second photoresist pattern by adopting an electroplating process to form a first metal bonding pad and a second metal bonding pad; evaporating a first self-propagating film on a chip connection area and a box dam connection area on the upper surface of the first metal bonding pad; and welding a box dam frame material on the first self-propagating film in the box dam connecting area, and evaporating a second self-propagating film on the upper surface of the box dam frame material for connecting a packaging plate. According to the dam substrate and the preparation method thereof disclosed by the embodiment of the invention, rapid welding of the dam can be realized, the process flow is simplified, the process cost is reduced, and the problem of substrate warping caused by electroplating is solved.

The present invention discloses a double-sided stacked fan-out packaging device and a preparation method thereof, wherein the packaging device comprises a substrate with through holes; a stacked chip; an encapsulation material layer; a rewiring layer located on the encapsulation material layer; a first conductive structure, wherein the chip located on the first surface is electrically connected to the rewiring layer through the first conductive structure; and a second conductive structure that runs through the thickness direction of the substrate, wherein at least a portion of the second conductive structure is disposed in at least a portion of the through holes of the substrate, and the second conductive structure electrically connects the rewiring layers on the first surface and the second surface of the substrate. The solution of the embodiment of the present invention electrically connects the chips mounted on the two surfaces of the substrate through the second conductive structure disposed on the substrate. Compared with the TSV packaging process, it avoids making silicon through vias on the chip, reduces the packaging cost, and can effectively improve the packaging yield. Compared with the wire bonding packaging process, it avoids interconnecting the chips through a carrier and wires, thereby improving the transmission efficiency.

The present application relates to the technical field of electronic packaging, and especially relates to a power electronic packaging module and a packaging method, wherein a pyrolyzable polymer film is used as a temporary carrier, and a microgroove array is constructed on the surface; nano metal solder paste is filled in the microgroove array to form a patterned metal layer; a power chip and a substrate are respectively arranged on two sides of the patterned metal layer, and are attached and temporarily fixed; the whole structure after attachment is arranged in a sintering cavity, and under the condition of 200-260 DEG C and no external pressure, the atmosphere composition and the temperature are controlled in stages, so that the polymer film is pyrolyzed and removed, the nano metal solder paste is sintered to form a metal network structure, and metallurgical interconnection between the power chip surface and the substrate is completed. Compared with a traditional interconnection scheme, the present application has design flexibility, process compatibility and long-term reliability, and provides an interconnection solution with stable structure, controllable process and suitability for mass production for a new generation of high-power module packaging.

The embodiment of the invention discloses a semiconductor packaging structure, a manufacturing method and a memory system, the semiconductor packaging structure comprises a first semiconductor chip and a second semiconductor chip which are stacked along a first direction and are coupled, the first semiconductor chip comprises a first tube core and a second tube core which are bonded along the first direction, the first tube core is coupled with the second tube core through a first bonding contact; the first connecting structure penetrates through the first tube core along the first direction; the second connecting structure penetrates through the second tube core along the first direction; wherein in the first direction, the first bonding contact is located between the first connecting structure and the second connecting structure, and the first connecting structure and the second connecting structure are coupled through the first bonding contact.

The present invention provides a packaging carrier and a method for manufacturing the same. The packaging carrier includes a build-up circuit structure, a first insulating protective layer, a plurality of connection pads, and a plurality of metal balls. The build-up circuit structure has an upper surface. The first insulating protective layer is disposed on the upper surface of the build-up circuit structure and has a plurality of first openings. The connection pads are respectively disposed in the first openings of the first insulating protective layer and are structurally and electrically connected to the build-up circuit structure. Each connection pad has an arc-shaped groove. The metal balls are respectively disposed in the arc-shaped groove of each connection pad. The metal balls and the corresponding connection pads define a plurality of bump structures, and the plurality of top surfaces of the bump structures are located on the same plane. The packaging carrier provided by the present invention has better flatness, and the method for manufacturing the packaging carrier of the present invention can improve the chip packaging yield.

The invention discloses a packaging structure and a packaging method, and the method comprises the steps: forming a bottom interconnection structure layer on a bearing surface, and the bottom interconnection structure layer comprises a connection region; providing an interconnection chip, wherein the interconnection chip comprises a bonding surface and a back surface which are opposite; an interconnection chip is bonded on the bottom interconnection structure layer of the connection area, the bonding surface and the bottom interconnection structure layer are oppositely arranged, and the interconnection chip and the bottom interconnection structure layer are electrically connected; carrying out thinning processing on the back surface of the interconnection chip; after the back face of the interconnection chip is thinned, a top interconnection structure layer is formed on the bottom interconnection structure layer, and the top interconnection structure layer is electrically connected with the bottom interconnection structure layer; providing a first chip and a chip set; bonding a first chip and a chip group on the top interconnection structure layer, wherein the first chip and the chip group are electrically connected with the top interconnection structure layer respectively; the chipset and the first chip are electrically connected through the top interconnection structure layer, the bottom interconnection structure layer and the interconnection chip. The performance of the semiconductor structure is improved.

The utility model discloses a chip ceramic packaging structure with a flat plate heat sink. The chip ceramic packaging structure comprises a ceramic base and the flat plate heat sink, the ceramic base is of a through cavity structure, the ceramic base is welded to the bottom of the ceramic base through welding flux, and the chip is arranged in a through cavity and connected to a chip bonding area in the center of the flat plate heat sink. And the top of the ceramic base is welded with the metal cover plate through the sealing ring. A concentric-square-shaped groove is formed in the position, located on the outer side of the core bonding area and close to the inner side face of the through cavity structure, of the face, making contact with the ceramic base, of the flat plate heat sink, so that when the flat plate heat sink and the ceramic base are welded, redundant welding flux can be dragged into the concentric-square-shaped groove in sequence, and the redundant welding flux is accumulated in the groove after being cooled; the welding flux is effectively prevented from flowing towards the middle of the flat plate heat sink in an uncontrolled manner during welding, so that the flatness of connection between the flat plate heat sink and the ceramic base after welding is ensured, the welding flux is prevented from flowing to a core bonding area, namely, the flatness of the core bonding area is ensured, and the packaging qualification rate of products is improved.

The invention belongs to the technical field of LED packaging equipment, and particularly relates to an LED side light support discharging and stacking device with a self-adaptive buffering function, the LED side light support discharging and stacking device comprises a base, a supporting seat is arranged at the top of the base, and a sliding rail is arranged on one side of the supporting seat. Specifically, the linkage assembly converts reciprocating motion of the first suction cup machine into one-way intermittent rotation of an intermittent fluted disc, and a bearing plate and the material receiving box are driven to descend step by step through a lead screw, a sliding block and a slope transmission pair. The descending distance each time is accurately equal to the sum of the thickness of the side light support plate and the combined thickness of the buffer plate and the convex part, due to the incomplete gear design of the fluted disc and the one-way conversion characteristic of the reciprocating hole, it is guaranteed that idling is conducted only in the discharging stroke driving descending process and the return stroke process, invalid movement is effectively filtered, and therefore each support is released at the fixed height; therefore, zero-impact stacking is realized, and the material receiving surface is kept flush with the receiving surface in the material receiving box.

The invention relates to the technical field of low-melting-point metal heat-conducting fins, in particular to a carbon fiber soft felt reinforced low-melting-point metal heat-conducting fin which is prepared by conducting surface treatment on a carbon fiber soft felt and then pouring low-melting-point metal into the carbon fiber soft felt. The carbon fiber soft felt reinforced low-melting-point metal heat-conducting sheet has the characteristics of low surface roughness, high tensile strength, slag and chip falling prevention, low thermal resistance and the like, the yield of semiconductor chip packaging can be improved, and the packaging process and automation are facilitated.

The utility model discloses packaging equipment for a gas sensitive sensor, and relates to the technical field of packaging equipment, the packaging equipment comprises a bottom plate, a pick-and-place mechanism is arranged above the bottom plate, the pick-and-place mechanism comprises a positioning pillar, the bottom of the positioning pillar is provided with a packaging groove, the inner wall of the packaging groove is fixedly provided with a hole plate, and the inner wall of the hole plate is provided with a plurality of holes. A hole plate is arranged in the packaging groove, an air bag is fixedly installed at the bottom of the hole plate and communicates with a hole in the hole plate, the air bag is of an annular structure, a first electrode is arranged at the bottom of the packaging groove and is of an annular structure, and connecting rods are fixedly installed at the two ends of the first electrode and are of an L-shaped structure. According to the utility model, the air bag is inflated and deflated, so that the gas-sensitive sensor is taken out from packaging equipment, the phenomena that pins are bent due to manual operation, a welding seam is not smooth enough when an electrode is welded and the strength of the welding seam is reduced are avoided, and the packaging qualification rate of the gas-sensitive sensor is improved.

The present application provides a computing power acceleration card, a design method and a computing power server, wherein the computing power acceleration card includes: a circuit board, P computing power chips arranged on the circuit board; the computing power chip includes a packaging substrate and N computing power core silicon wafers arranged on the packaging substrate, N is greater than or equal to 1 and less than or equal to the threshold value of the number of computing power core silicon wafers allowed to be accommodated by a single computing power chip; the computing power core silicon wafer includes a computing power core unit and M high-speed serial interfaces connected to the computing power core unit, P and M are both greater than or equal to 1; the computing power core silicon wafers located on the same computing power chip form package-level interconnections through corresponding high-speed serial interfaces, and the computing power core silicon wafers located on different computing power chips form circuit board-level interconnections through corresponding high-speed serial interfaces; the computing power core units corresponding to the P computing power chips constitute a core computing module. The present application can improve the computing power capability of the computing power chip, reduce the chip packaging cost, and build a high-specification computing power acceleration card.

The present invention provides a packaging structure and a packaging method, the packaging structure comprising: a packaging base, the packaging base comprising a first interconnection structure; an elastic support member, the elastic support member is covered on one side of the packaging base, the elastic support member comprises a plurality of through holes, and the first interconnection structure is exposed from the plurality of through holes; a photosensitive chip, the photosensitive chip is arranged on a side of the elastic support member away from the packaging base, the photosensitive chip is electrically connected to the first interconnection structure through the plurality of through holes; and an external plastic sealing layer, the external plastic sealing layer plastic seals the photosensitive chip and the elastic support member onto the packaging base, the external plastic sealing layer comprises a hollow area, and the photosensitive area of ​​the photosensitive chip is exposed from the hollow area. The elastic support member is used to elastically support the photosensitive chip to disperse the external force applied to the photosensitive chip in the injection molding packaging process of the photosensitive chip, thereby overcoming the problem of crushing.

This invention discloses a low-temperature SMT packaging method for optical components and an optoelectronic module. The low-temperature SMT packaging method includes: printing solder paste onto the pads of a PCBA board to obtain a first PCBA board; mounting the optical component onto the pads of the first PCBA board to obtain a second PCBA board; performing reflow soldering on the second PCBA board to obtain a third PCBA board, wherein the temperature change rate of the optical component during the reflow soldering process is less than 2°C / min; applying adhesive to the third PCBA board, with the application location located at the end of the optical component away from the fiber optic connector, to obtain a fourth PCBA board; and curing the adhesive to obtain a fifth PCBA board. This invention avoids deformation of the optical component and improves the packaging yield of the optical component.

The invention relates to the technical field of electronic device packaging and curing equipment, in particular to a multifunctional glue curing device which is reasonable in structure, wide in adaptability and capable of meeting the curing requirements of various devices, particularly chip packaging glue curing in the field of thermal printing heads and improving the product curing and packaging quality and a using method of the multifunctional glue curing device. The front end and the rear end of the material conveying mechanism are each provided with a material disc position sensor, the positions, corresponding to the feeding end and the discharging end of the material conveying mechanism, of the curing bin are each provided with a material conveying opening, and sealing bin doors are arranged at the positions of the material conveying openings and connected with a bin door opening and closing control component. A heating mechanism located below the material conveying mechanism is further arranged in the curing cabin, the heating mechanism is provided with a circulating fan, an air supply pipeline, a heater and air inlet pipelines, the heater is a heating module composed of a PTC thermistor and cooling fins, the heating module is provided with at least two air inlet pipelines, and the air inlet ends of the air inlet pipelines are arranged below the material conveying mechanism.