Flip-chip light emitting diodes and method of manufacturing thereof

A flip-chip, light-emitting device technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency and low adhesion, and achieve increased packaging yield, low contact resistivity, and excellent current-voltage. Effects of Features
CN101278409AActive Publication Date: 2008-10-01SAMSUNG ELECTRONICS CO LTD
1 Cites 9 Cited by

Patent Information

Authority / Receiving Office
CN Ā· China
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Publication Date
2008-10-01

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a flip-chip nitride-based light-emitting device and a preparation method thereof. More particularly, the present invention relates to a flip-chip nitride-based light emitting device having an electrode structure capable of improving luminous efficiency and a method of manufacturing the same. Background technique

[0002] The ohmic contact structure between semiconductors and electrodes is very important to realize light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) using nitride-based compound semiconductors such as emitting Gallium Nitride (GaN) semiconductor for blue and green light and ultraviolet light. Currently, commercially available GaN-based light-emitting devices are mainly formed on insulating sapphire (Al 2 o 3 ) on the substrate.

[0003] Meanwhile, these GaN-based light emitting devices are roughly classified into top light emitting diodes (TLEDs) and flip chip light emitting dio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More