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Multi-spectrum light emitting diode structure

A light-emitting diode and multi-spectral technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large number of chips, loss of conversion efficiency, difficulty in coordinating LED luminous efficiency, color rendering index, color temperature and luminous efficiency, etc., and achieve chip The number of particles is large, the number of chips is reduced, and the spectrum is flexible and changeable

Inactive Publication Date: 2017-09-15
NANCHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, white light LEDs for lighting are usually made in the form of "blue LED + phosphor". This form of white light LED has the following disadvantages: 1. It is difficult to coordinate the color rendering index, color temperature and luminous efficiency; 2. The phosphor powder is limited. The conversion efficiency loses the luminous efficiency of some LEDs
If LED chips of five colors are directly packaged to obtain white light of the aforementioned five primary colors, the number of chips used in the process of lamp packaging will be large, which will bring difficulties to the lamp bead circuit and optical design, and secondly, the mixing uniformity of light in space also difficult to adjust

Method used

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Embodiment 1

[0018] The substrate 100 adopts a silicon (Si) substrate, and the semiconductor stack 500 adopts In x Ga y Al 1-x-y N material system, n-type semiconductor layer 200 is doped with Si concentration 2×10 18 ─5×10 18 cm -3 GaN; p semiconductor layer 400 is doped with Mg concentration 1×10 20 cm -3 GaN; multi-spectral light-emitting multi-quantum well layer 300 is composed of three groups of multi-quantum well light-emitting units 310, 320 and 330 stacked and arranged sequentially from bottom to top, wherein multi-quantum well light-emitting unit 310 is composed of five periods of quantum wells 311 and quantum barriers 312. The quantum well 311 emits blue light with a wavelength of 450-460nm. The multi-quantum well light-emitting unit 320 is composed of two periods of quantum wells 321 and quantum barriers 322. The quantum well 321 emits blue light with a wavelength of 480-490nm. Well light-emitting unit 330 is made up of quantum well 331 and quantum barrier 332 of 1 period...

Embodiment 2

[0020] The substrate 100 is a gallium arsenide (GaAs) substrate, and the semiconductor stack 500 is In x Ga y Al 1-x-y P material system; n-type semiconductor layer 200 is n-type indium gallium aluminum phosphorus (Al x Ga y I n1-x-y P, 1≥x≥0, 1≥y≥0); the p semiconductor layer 400 is p-type indium gallium aluminum phosphorus (Al x Ga y I n1-x-y P, 1≥x≥0, 1≥y≥0); the multi-spectral light-emitting multi-quantum well layer 300 is composed of two sets of multi-quantum well light-emitting units 310 and 320 stacked in sequence, and the multi-quantum well light-emitting unit 310 consists of five periods The quantum well 311 and the quantum barrier 312 are composed of the quantum well 311, and the quantum well 311 emits orange light with a wavelength of 590-600nm. -630nm red light; the luminescent spectrum of the multi-spectral light-emitting diode structure in the present embodiment is the spectrum of red and orange two-color light synthesis, and its spectrum can be adjusted a...

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Abstract

The invention discloses a multi-spectrum light emitting diode structure, comprising a substrate and a semiconductor lamination. The semiconductor lamination at least comprises an n-type semiconductor layer, a p-type semiconductor layer and a multi-spectrum light emitting multi-quantum well layer. The multi-spectrum light emitting multi-quantum well layer is composed of two or three groups of multi-quantum well light emitting units which are arranged in a lamination mode and have different quantum well forbidden band widths. According to the multi-spectrum light emitting multi-quantum well layer, two or three wavelengths of light can be emitted at the same time. The wavelength difference between any two wavelengths of light is lambda. The lambda is greater than or equal to 10nm and is smaller than or equal to 100nm. The multi-quantum well light emitting units are periodic structures composed of quantum well layers and quantum barrier layers. The period number is K. The light emitting wavelengths of the multi-quantum well light emitting units are decided by the quantum well forbidden band widths. A light emitting wavelength range is 380nm-700nm. According to the structure, multiple spectrums can be directly emitted from a single chip, the number of the chips for five- primary color light packaging is greatly reduced, and a great design window for circuit design, optical design and light mixing of lamp beads is provided.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to a multi-spectrum light-emitting diode structure. Background technique [0002] Light-emitting diodes (LEDs) have received widespread attention and research for their remarkable characteristics of energy saving, environmental protection, and high reliability. Today, as the energy crisis and environmental crisis are getting worse, many countries and regions have listed LED lighting technology as a national development strategy. After more than 20 years of research and hard work, LED epitaxial growth technology, LED chip manufacturing technology and LED packaging technology have all made great progress, making LEDs widely used in display screens, indicator lights, landscape lighting, automotive lights, general lighting, etc. field. [0003] At present, white LEDs for lighting are usually made in the form of "blue LED + phosphor". This form of white LED has the follo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/04H01L33/30H01L33/26
CPCH01L33/06H01L33/04H01L33/26H01L33/30
Inventor 刘军林江风益莫春兰张建立王小兰吴小明高江东
Owner NANCHANG UNIV
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