Novel medium-infrared laser crystal of ytterbium, holmium and dysprosium-doped lead fluoride and preparation method of novel medium-infrared laser crystal

A technology of infrared lasers and laser crystals, applied in chemical instruments and methods, lasers, crystal growth, etc.

Active Publication Date: 2019-01-22
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are no reports of 2.7-3.1 micron ytterbium holmium dyspr

Method used

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  • Novel medium-infrared laser crystal of ytterbium, holmium and dysprosium-doped lead fluoride and preparation method of novel medium-infrared laser crystal
  • Novel medium-infrared laser crystal of ytterbium, holmium and dysprosium-doped lead fluoride and preparation method of novel medium-infrared laser crystal

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Experimental program
Comparison scheme
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Example Embodiment

[0022] Example 1: Yb 0.01 Ho 0.01 Dy 0.01 Pb 0.97 F 2 Crystal growth preparation

[0023] PbF 2 (99.999%), YbF 3 (99.999%), HoF 3 (99.999%) and DyF 3 (99.999%) Mix thoroughly according to the molar ratio of the proportioning equation, and put it into a self-made crucible after fluorination treatment and seal it. Put the crucible in the lower furnace to melt the material in the high temperature zone with a temperature of 980℃ for 6 hours, and keep it for 4 hours to fully melt it. The growth atmosphere is N 2 Gas, the crucible is grown at a rate of 1.2~1.8mm / h, and the temperature gradient of the growth zone is maintained at 20~80℃ / cm; after the growth is completed, in order to prevent the crystal from cracking during the cooling process, keep it at 20~40℃ / Cool slowly to room temperature at a rate of h.

Example Embodiment

[0024] Embodiment 2: Yb 0.02 Ho 0.01 Dy 0.005 Pb 0.965 F 2 Crystal growth preparation

[0025] PbF 2 (99.999%), YbF 3 (99.999%), HoF 3 (99.999%) and DyF 3 (99.999%) Mix thoroughly according to the molar ratio of the proportioning equation, and put it into a self-made crucible after fluorination treatment and seal it. Put the crucible in the lower furnace to melt the material in the high temperature zone of 1060℃ for 8 hours, and keep it for 4 hours to make it fully melted. The growth atmosphere is N 2 Gas, the crucible is grown at a rate of 1.4-1.6mm / h, and the temperature gradient in the growth zone is maintained at 20-60℃ / cm; after the growth is completed, in order to prevent the crystal from cracking during the cooling process, keep it at 20-30℃ / h rate slowly cooled to room temperature, PbF obtained after the growth 2 The laser crystal has good optical quality. The schematic diagram of the sensitization and deactivation mechanism of ytterbium-holmium-dysprosium tri-doped lead...

Example Embodiment

[0026] Embodiment 3: Yb 0.02 Ho 0.02 Dy 0.01 Pb 0.95 F 2 Crystal growth preparation

[0027] PbF 2 (99.999%), YbF 3 (99.999%), HoF 3 (99.999%) and DyF 3 (99.999%) Mix thoroughly according to the molar ratio of the proportioning equation, and put it into a self-made crucible after fluorination treatment and seal it. Put the crucible in the lower furnace to melt the material in the high temperature zone of 1080℃ for 8 hours, and keep it for 6 hours to make it fully melted. The growth atmosphere is N 2 Gas, the crucible is grown at a rate of 1.5~1.8mm / h, and the temperature gradient of the growth zone is maintained at 20~50℃ / cm; after the growth, in order to prevent the crystal from cracking during the cooling process, keep it at 20~25℃ / Cool slowly to room temperature at a rate of h. After the growth is over, the crystal is taken out, cut and polished by directional cutting, and the spectrum is tested. figure 2 Shown.

[0028] In summary, the present invention uses the Bridgman me...

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Abstract

The invention discloses a novel medium-infrared laser crystal of a ytterbium, holmium and dysprosium-doped lead fluoride and a preparation method of the novel medium-infrared laser crystal. Holmium ions act as activating ions to realize a fluorescence output of 2.7 to 3.1 micrometers, and corresponding luminescence energy level transition is holmium: 5I6 to 5I7; ytterbium ions act as sensitizing ions to solve the problem of low absorption efficiency of the holmium ions at a commercial high-power LD pump; dysprosium ions have two effects; on one hand, the dysprosium ions shortens the life of the lower energy level (5I7) of the holmium ions, and the energy level life of the upper energy level (5I6) of the cesium ion does not change obviously, thus beneficially achieving the holmium: 5I6 to 5I7 population inversion and the mid-infrared laser output of the holmium ions; on the other hand, by energy transfer from holmium: 5I7 to dysprosium: 6H13/2, the number of particles on the upper energy level (6H13/2) of the dysprosium ions is increased, and dysprosium: 6H13/2 arrow 6H15/2 population inversion and mid-infrared laser output of the dysprosium ions are achieved.

Description

technical field [0001] The invention relates to the technical field of laser crystal gain materials, in particular to a novel mid-infrared laser crystal and a preparation method thereof. Background technique [0002] The mid-infrared 2.7-3.1 micron band is at the absorption peak of water molecules and harmful gas molecules. It can be widely used in medical engineering, air pollution monitoring, laser radar, scientific research and other fields. At the same time, it can achieve more The long-wavelength laser output has broad application prospects. In the current research work, the main dopant ions of 2.7-3.1 microns are concentrated in Er 3+ and Ho 3+ Between, such as doping Er 3+ YAP, YAG, LiYF 4 Laser crystals, etc., however Er-doped 3+ High-concentration doping is often required in the matrix of laser crystals, which makes it difficult to obtain laser crystals with high optical quality. By comparison, doped Ho 3+ The laser crystal can obtain a laser crystal with hig...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B11/00H01S3/16
CPCC30B11/00C30B29/12H01S3/1606H01S3/161H01S3/1618H01S3/1645
Inventor 张沛雄王宇皓陈振强朱思祁尹浩李真
Owner JINAN UNIVERSITY
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