636results about How to "Adjust density" patented technology

The invention provides a transistor and a forming method of the transistor. The forming method of the transistor comprises the steps that a semiconductor substrate is provided, wherein an isolation structure is arranged in the semiconductor substrate, gate structures are arranged on the surfaces of the portions, on the two sides of the isolation structure, of the semiconductor substrate, and each gate structure comprises a gate dielectric layer on the surface of the semiconductor substrate and a gate electrode located on the surface of the gate dielectric layer; first side walls are formed on the two sides of the gate structure, wherein the first side walls are doped silicon nitride layers; second side walls are formed on the surfaces of the first side walls, and the etching rate of each second side wall is larger than the etching rate of each first side wall; a source electrode and a drain electrode are formed in the portions, located on the two sides of the gate structures, of the semiconductor substrate; metal silicide layers are formed on the surface of the source electrode and on the surface of the drain electrode; the second side walls are eliminated; a stress layer is formed on the surface of the semiconductor substrate. By the adoption of the forming method of the transistor, the stray capacitance on the two sides of the gate structures of the transistor can be reduced, and the stress borne by the trench area of the transistor is increased.