ITO-Ag-ITO etching liquid for AM-OLED display screen and preparation method
An AM-OLED, etching solution technology, applied in chemical instruments and methods, surface etching compositions, etc., can solve the problem of difficulty in controlling the etching angle and the etching amount of the metal layer, affecting the image accuracy and quality of high-density thin wires, affecting etching Effect repeatability and other issues, to achieve the effect of stable reaction, smooth lines, and consistent etching rate
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Embodiment 1
[0031] The invention is an ITO / Ag / ITO etchant for AM-OLED display screen, which comprises phosphoric acid, acetic acid, nitric acid, additives, surface active agent and pure water.
[0032] Wherein, the percentages by weight of each of the six raw materials are: 60% phosphoric acid, 25% acetic acid, 3% nitric acid, 1% additive, 0.5% surfactant, and the rest is pure water.
[0033] Wherein, the phosphoric acid concentration is 85%, the acetic acid concentration is 99.8%, and the nitric acid concentration is 70%.
[0034] Wherein, the additive uses potassium nitrate as a single component. The purity of the potassium nitrate is 99.5%, and the impurity components in the potassium nitrate raw material are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.
[0035] Wherein, the surfactant is fatty alcohol polyoxyethylene ether.
[0036] Wherein, there are no more than 100 particles with a particle size greater than 0.3 μm per 1000 Kg in...
Embodiment 2
[0050] The invention is an ITO / Ag / ITO etchant for an AM-OLED display, characterized in that the etchant includes phosphoric acid, acetic acid, nitric acid, additives, surfactants and pure water.
[0051] Wherein, the percentage by weight of each of the six raw materials is: 50% phosphoric acid, 10% acetic acid, 6% nitric acid, 1% additive, 0.5% surfactant, and the rest is pure water.
[0052] Wherein, the phosphoric acid concentration is 85%, the acetic acid concentration is 99.8%, and the nitric acid concentration is 70%.
[0053] Wherein, the additive uses potassium nitrate as a single component. The purity of the potassium nitrate is 99.5%, and the impurity components in the potassium nitrate raw material are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.
[0054] Wherein, the surfactant is a non-foaming nonionic surfactant, and the fatty alcohol polyoxyethylene ether in the AEO series is used.
[0055] There are no more th...
Embodiment 3
[0069] The difference between this embodiment and Example 1 is that the percentage by weight of each raw material in the six raw materials is respectively: 55% phosphoric acid, 15% acetic acid, 5% nitric acid, 0.5% additive, 0.2% surfactant, and the rest for pure water. The additive uses potassium nitrate, and the surfactant uses alkylphenol polyoxyethylene ether.
[0070] Implementation process: immerse the ITO / Ag / ITO substrate in the etching solution, control the etching temperature at 40°C, rinse with ultrapure water for 80s after etching, and finally dry with high-purity nitrogen. Under the observation of the etched substrate under a 100,000-fold SEM, the edges of the In / Ag / In wires are flat, the substrate surface is clean and free of metal residues, and the etching angle is kept between 70° and 90°.
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