38results about How to "Consistent etch rate" patented technology

The invention discloses a novel acidic molybdenum aluminum molybdenum etching liquid and its preparation process. The novel acidic molybdenum aluminum molybdenum etching liquid comprises phosphoric acid, acetic acid, nitric acid, metal nitrate, a cationic surfactant and pure water. The preparation process of the etching liquid includes: maintaining the rotation speed of an ingredient tank stirrer, adding the phosphoric acid, the acetic acid, the nitric acid, potassium nitrate, the pure water and the cationic surfactant sequentially into the ingredient tank, fully stirring them, then introducing the mixture into a filter to conduct filtration, thus obtaining the molybdenum aluminum molybdenum etching liquid. The molybdenum aluminum molybdenum etching liquid provided in the invention has a small particle size and high purity, has a basically consistent etching rate on different metals, and is stable in reaction. By adjusting the nitric acid concentration, the etching speed can be controllable. The substrate etched by the etching liquid has a clean and tidy surface, no residue, and no intermetallic layering phenomenon. The remaining lines are smooth, and the etching angle is maintained at 40-60 degrees.

The invention discloses a 3D NAND storage and a forming method thereof. The forming method of the 3D NAND storage has the steps of forming an intermediate isolation layer between a first stacking structure and a second stacking structure; and sequentially etching the second stacking structure, the intermediate isolation layer and the first stacking structure, wherein when grid partition slots arein the second stacking structure, the middle isolation layer and the first stacking structure, by using the intermediate isolation layer, the etching speed for etching the intermediate isolation layeris consistent with that for etching the first stacking structure, and the etching speed for etching the second stacking structure is consistent with that for etching the first stacking structure, sothat the bending defect of the side wall of the grid partition slots caused when the speed for etching the intermediate insulating layer is different from the etching speeds for etching the first stacking structure and the second stacking structure can be avoided.

The invention discloses an etching liquid for silicon system multilayer films. The etching liquid comprises a hydrofluoric acid solution, an ammonium fluoride solution, a surfactant and a compound represented by a general formula shown in the description; and in the formula, R1 is one of an amino group, hydrogen, oxygen and a hydroxyl group, and R2 is one of fluorine, chlorine, hydrogen, a hydroxyl group and a C1-C4 alkyl group. The etching liquid for silicon system multilayer films allows the etching speed of a silicon nitride layer to basically same to the etching speed of a silicon oxide layer, and has a good etching effect.

The invention provides a pseudo gate removing method. In a pseudo gate removing step, pulse plasma etching is adopted to conduct first etching on a pseudo gate, and then second etching is conducted on the residual pseudo gate. When the pulse plasma etching is adopted to conduct the first etching on the pseudo gate, an etching machine outputs source power in a pulse mode to etch the pseudo gate in an intermittent mode, source power output time and vacant time are both short, a polymer and solid produced in etching are discharged out of an opening formed through etching within the interval time of source power vacancy, the pulse plasma etching rates adopted for pseudo gates different in size are equal under the condition that no polymer blockage exists, a gate electrode dielectric layer with large-sized pseudo gates can be kept in a good shape when first etching is completed, and further the performance of the gate electrode dielectric layer can be improved.

The invention belongs to the technical field of chemical preparations, and relates to an aluminum etching agent and a preparation method thereof. The formula of the aluminum etching agent comprises the following components in percentages by weight: 70-78% of phosphoric acid, 5-6% of nitric acid, 6-10% of acetic acid, 1-5% of sulfamic acid, and the balance of water. The aluminum etching liquid provided by the invention can convert a metal compound into soluble salts which are dissolved in water, speeds of etching to different metals are consistent basically, reaction is stable, the circumstance that etching efficiency and neatness of the surface of a substrate are affected by precipitate attachment is avoided, and surface dirt is removed conveniently.

The invention discloses a device and method for improving the plasma etching uniformity. The device comprises a direct-current power supply and a filter, wherein one end of the direct-current power supply is grounded, the other end of the direct-current power supply is connected with a focusing ring of a lower electrode of the plasma etching system through the filter, direct-current voltage is loaded on the direct-current power supply, the magnitude and polarity of the direct-current power supply are adjustable, and the filter is used for filtering alternating-current components in direct current. The polarity and the magnitude of the direct-current voltage are adjusted by loading direct-current voltage on the focusing ring of the lower electrode of the plasma etching system, so that the etching rate of the edge part of a wafer tends to be consistent with the etching rate of the center part of the wafer. The device is simple and easy to implement, the etching uniformity can be effectively improved, and the production efficiency is improved.

The invention relates to an etching device and an etching method. The etching device comprises a spray pipe and a liquid scrapping device, wherein the spray pipe is provided with a plurality of spray heads; the plurality of spray heads are used for spraying etching liquid to a surface to be etched of a circuit substrate; and the liquid scrapping device is used for scrapping the etching liquid deposited in a center area of the surface to be etched out of the surface to be etched in a sliding mode. The etching method comprises the following steps of: using the plurality of spray heads arranged on the spray pipe to spray the etching liquid towards the surface to be etched of the circuit substrate; and using the liquid scrapping device to scrap the etching liquid deposited in the center area of the surface to be etched out of the surface to be etched in a sliding mode. The etching method can avoid generating water pit effect.

The invention discloses a copper indium gallium selenide (CIGS) thin-film solar cell window layer which is composed of a lower film layer and an upper film layer from bottom to top. The lower film layer is a doped ZnO film layer, the upper film layer is an ITO film layer or a doped ZnO film layer, and when the lower and upper film layers are both doped ZnO film layers, the lower and upper film layers are different doped ZnO film layers. The invention also discloses a preparation method thereof. Two different films can be deposited with a common DC power supply without additional equipment, the operation is convenient, and production is facilitated. When the lower film layer is deposited, a different doped ZnO target material can be selected to obtain the lower film layer satisfying the production requirement by adjusting the deposition temperature, atmosphere, air pressure, power and so forth, the obtained lower film layer is combined with the continuously produced upper film layer to match with the entire battery, the production efficiency is improved in the process, the production cost is reduced, and the film quality is easy to control.

The invention discloses a target back plate for magnetron sputtering and a magnetron sputtering device, relates to the technical field of magnetron sputtering, and aims to increase the utilization rate of a target material and improve the uniformity of the thickness of a film formed on a substrate to be coated. According to the target back plate for magnetron sputtering, a cooling fluid channel is formed inside the target back plate, a plurality of magnets are arranged on the back side of the target back plate, magnetic conductive pieces are arranged inside the cooling liquid channel in the target back plate; and the magnetic conductive pieces correspond to magnetic fields with the strongest magnetic intensity generated by the magnetic conductive pieces and the plurality of magnets. The target back plate for magnetron sputtering and the magnetron sputtering device, which are disclosed by the invention, are applied to planar film coating.

The invention provides a semiconductor device forming method. The method comprises steps: a substrate with a first area and a second area is provided, a first pseudo gate is formed on part of the substrate in the first area, a second metal gate is formed on part of the substrate in the second area, an interlayer dielectric layer is also formed on the surface of the substrate in the first area and in the second area, and the interlayer dielectric layer coats the side wall surface of the first pseudo gate and the side wall surface of the second metal gate; a synchronous pulse etching process is adopted to etch and remove the first pseudo gate, and a first opening is formed in the interlayer dielectric layer in the first area; a synchronous pulse method is adopted to carry out etching post-treatment on the first opening, and the treatment gas for the etching post-treatment comprises a carbon tetrafluoride gas; and a first metal gate filling the first opening is formed. The etched and removed thickness of the interlayer dielectric layer is small, the etched and removed thicknesses of the interlayer dielectric layer in a graph sparse area and a graph intensive area are consistent, and the electrical performance of the semiconductor device is thus improved.

The invention discloses wafer wet etching equipment. The equipment comprises a storage container, and a main pipeline, a pressure relief pipeline, an auxiliary pipeline and a recovery pipeline which are respectively connected with the storage container; the main pipeline is connected with a pump, a heater and a flow meter; the pressure relief pipeline is connected with a pressure sensor and a pressure regulator; the storage container is used for storing an etching agent; the pump is used for pumping the etching agent in the storage container into the main pipeline; the heater is used for heating the etching agent to a preset temperature; the equipment further comprises a plurality of etching chambers used for etching the wafer; each etching chamber is connected with the main pipeline through a respective branch pipeline; and the equipment also comprises a control device used for controlling the etching process of each etching chamber.