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Copper indium gallium selenide (CIGS) thin-film solar cell window layer and preparation method thereof

A technology for solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve the problems of unfavorable production costs, increased production costs, harm to operators, etc., and achieves the effects of improving production efficiency, reducing production costs, and easy quality control.

Active Publication Date: 2017-05-17
浙江尚越新能源开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First of all, the deposition rate of i-ZnO is low, and the use of DC power supply to deposit films cannot meet the requirements of industrial production. If RF power supply is used to deposit films, although the production rate can be improved, RF equipment is usually expensive, and the equipment is very expensive for operators. great danger
Secondly, as the top electrode of the thin-film solar cell, the window layer requires the film to have excellent electrical conductivity and high light transmittance. Although the ITO film has good electrical conductivity, the single-layer ITO film has poor transmittance in the visible light region. Moreover, ITO targets are expensive, which is not conducive to the control of production costs; if AZO films are used, although they have better transmittance, their conductivity is worse than that of ITO films, which will increase the series resistance of the films and affect battery efficiency.
Finally, whether ITO or AZO film is used as the window layer, a layer of i-ZnO must be sputtered first, and two different power sources are required, which greatly increases the production cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] The preparation method of the above-mentioned copper indium gallium selenide thin film solar cell window layer comprises the following steps:

[0025] Step 1. Put the substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are deposited sequentially into a vacuum chamber; the substrate is a stainless steel substrate, a glass substrate or a polymer substrate.

[0026] Step 2. The vacuum chamber is divided into several deposition chambers. The lower film layer target is installed in the pre-deposition chamber, and the upper film layer target is installed in the subsequent deposition chamber. The lower film layer target and the upper film layer target are rotating targets or flat surfaces. Target, the temperature of the vacuum chamber is maintained at 50-350°C, and the vacuum is evacuated to below 5×10 -4 Torr, then fill the atmosphere to maintain the pressure of the vacuum chamber at 1-30mTorr, the atmosphere of the pre-deposition cha...

Embodiment 1

[0031] Step 1, placing the stainless steel substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are deposited sequentially into a vacuum chamber;

[0032] Step 2. The vacuum chamber is divided into 5 deposition chambers. The first deposition chamber is equipped with AZO targets, and the subsequent 4 deposition chambers are respectively equipped with ITO targets. The AZO targets are ZnO-doped Al 2 o 3 , Al 2 o 3 The doping amount of the ITO target is 0.1%, the doping amount of the ITO target is 0.1%, the temperature of the vacuum chamber is maintained at 200°C, and the vacuum chamber is pumped to 7×10 -5 Torr, then fill the atmosphere to maintain the vacuum chamber pressure at 6mTorr, the first deposition chamber atmosphere is a mixture of argon and oxygen, argon is 6 times that of oxygen, argon and oxygen are mixed in proportion and then filled into the first deposition room; the subsequent four deposition chamber atmosphere is a mix...

Embodiment 2

[0035] Step 1, placing the glass substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are deposited sequentially into a vacuum chamber;

[0036] Step 2. The vacuum chamber is divided into 5 deposition chambers. The first deposition chamber is equipped with BZO targets, and the subsequent 4 deposition chambers are respectively equipped with MZO targets. The BZO targets are ZnO-doped B 2 0 3 , B 2 0 3 The doping amount of MZO is 0.5%, the MZO target is ZnO doped MgO, the doping amount of MgO is 5%, the temperature of the vacuum chamber is maintained at 50°C, and the vacuum chamber is pumped to 5×10 -5 Torr, then fill the atmosphere to maintain the vacuum chamber pressure at 1mTorr, the first deposition chamber atmosphere is a mixture of argon and oxygen, the volume of argon and oxygen is the same, argon and oxygen are mixed in proportion and then filled into the first deposition chamber ; The atmosphere of the subsequent four depositio...

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Abstract

The invention discloses a copper indium gallium selenide (CIGS) thin-film solar cell window layer which is composed of a lower film layer and an upper film layer from bottom to top. The lower film layer is a doped ZnO film layer, the upper film layer is an ITO film layer or a doped ZnO film layer, and when the lower and upper film layers are both doped ZnO film layers, the lower and upper film layers are different doped ZnO film layers. The invention also discloses a preparation method thereof. Two different films can be deposited with a common DC power supply without additional equipment, the operation is convenient, and production is facilitated. When the lower film layer is deposited, a different doped ZnO target material can be selected to obtain the lower film layer satisfying the production requirement by adjusting the deposition temperature, atmosphere, air pressure, power and so forth, the obtained lower film layer is combined with the continuously produced upper film layer to match with the entire battery, the production efficiency is improved in the process, the production cost is reduced, and the film quality is easy to control.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a window layer of a copper indium gallium selenium thin film solar cell and a preparation method thereof. Background technique [0002] In traditional copper indium gallium selenide (CIGS) thin film solar cells, sputtered i-ZnO plus ITO or AZO layer is generally used as the window layer of the cell, but this structure has certain disadvantages. First of all, the deposition rate of i-ZnO is low, and the use of DC power supply to deposit films cannot meet the requirements of industrial production. If RF power supply is used to deposit films, although the production rate can be improved, RF equipment is usually expensive, and the equipment is very expensive for operators. Great danger. Secondly, as the top electrode of the thin-film solar cell, the window layer requires the film to have excellent electrical conductivity and high light transmittance. Although the ITO film has go...

Claims

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Application Information

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IPC IPC(8): H01L31/0445H01L31/18
CPCH01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 任宇航邹以慧罗明新
Owner 浙江尚越新能源开发有限公司
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