Copper indium gallium selenide (CIGS) thin-film solar cell window layer and preparation method thereof
A technology for solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve the problems of unfavorable production costs, increased production costs, harm to operators, etc., and achieves the effects of improving production efficiency, reducing production costs, and easy quality control.
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[0024] The method for preparing the window layer of the copper indium gallium selenium thin film solar cell includes the following steps:
[0025] Step 1: Put the substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are sequentially deposited into a vacuum chamber; the substrate is a stainless steel substrate, a glass substrate or a polymer substrate.
[0026] Step 2. The vacuum chamber is divided into several deposition chambers. The pre-deposition chamber is equipped with lower film target, and the subsequent deposition chamber is equipped with upper film target. The lower and upper film targets are rotating targets or planes. Target, the temperature of the vacuum chamber is maintained at 50-350℃, and the vacuum is reduced to less than 5×10 -4 Torr, and then fill the atmosphere to maintain the pressure of the vacuum chamber at 1-30mTorr, the pre-deposition chamber atmosphere is a mixture of inert gas and oxidizing gas, the inert gas is 1-80...
Example Embodiment
[0030] Example 1
[0031] Step 1: Put the stainless steel substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are sequentially deposited into the vacuum chamber;
[0032] Step 2: The vacuum chamber is divided into 5 deposition chambers, the first deposition chamber is equipped with AZO targets, and the subsequent 4 deposition chambers are respectively installed with ITO targets, and the AZO targets are ZnO doped with Al 2 O 3 , Al 2 O 3 The doping amount of the ITO target is 0.1%, the doping amount of the ITO target is 0.1%, the temperature of the vacuum chamber is maintained at 200 ℃, and the vacuum chamber is pumped to 7×10 -5 Torr, then fill the atmosphere to maintain the pressure of the vacuum chamber at 6mTorr, the first deposition chamber atmosphere is a mixture of argon and oxygen, argon is 6 times that of oxygen, argon and oxygen are mixed in proportion and then filled into the first deposition Chamber; The atmosphere of the subseque...
Example Embodiment
[0034] Example 2
[0035] Step 1: Put the glass substrate on which the back electrode Mo, the absorption layer CIGS, and the buffer layer CdS are sequentially deposited into the vacuum chamber;
[0036] Step 2. The vacuum chamber is divided into 5 deposition chambers, the first deposition chamber is equipped with BZO targets, and the subsequent 4 deposition chambers are respectively installed with MZO targets, and the BZO targets are ZnO doped with B 2 0 3 , B 2 0 3 The doping amount of MZO is 0.5%, the MZO target is ZnO doped MgO, the doping amount of MgO is 5%, the temperature of the vacuum chamber is maintained at 50℃, and the vacuum chamber is pumped to 5×10 -5 Torr, then fill the atmosphere to maintain the vacuum chamber pressure at 1mTorr, the first deposition chamber atmosphere is a mixture of argon and oxygen, argon and oxygen have the same volume, argon and oxygen are mixed in proportions and then filled into the first deposition chamber ; The atmosphere of the subsequent 4...
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