29 results about "Copper indium diselenide" patented technology

The invention belongs to the technical field of thin-film solar cells, and particularly discloses a CIGS thin-film solar cell back cleaning device which comprises a wiping mechanism and a positioning detection mechanism. The invention provides a method and a device for cleaning the back surface of a CIGS thin-film solar cell, which can quickly and stably clean the local part of the back surface of the CIGS thin-film solar cell and ensure the wiping integrity and the normal circulation of subsequent working sections, thereby realizing the effective supervision of quality control and the quality acceptance of products. In addition, the defects of traditional pressing block positioning, wiping paper dragging and other modes can be overcome, and the problems that a traditional cleaning mode is low in passing rate, poor in wiping effect, prone to repetition, high in clamp positioning fragment rate and the like are solved.

The invention relates to the technical field of flexible CIGS (Copper Indium Gallium Selenide) solar cells, in particular to a composite water-blocking conductive front film suitable for a flexible CIGS solar cell and a preparation method of the composite water-blocking conductive front film. Specifically, the composite water-blocking conductive front film comprises a substrate, an inorganic water-blocking layer is deposited on the upper surface of the substrate, a copper net is fixed on the lower surface of the substrate through an adhesive film layer, and the inorganic water-blocking layer, the substrate, the adhesive film layer and the copper net are of an integrated composite structure from top to bottom. According to the composite water-blocking conductive front film, the inorganic water-blocking layer and the adhesive film layer are formed on the surface of the substrate in a double-sided alternate processing mode, so that the risk that the water-blocking layer is damaged due to the fact that a water-blocking film is adopted for secondary processing at present is reduced, and when the composite water-blocking conductive front film is used for preparing a solar cell, the use amount of EVA is reduced, and the production cost is reduced. The overall thickness is reduced, the overall weight is reduced, and meanwhile the overall structural stability, bendability, flexibility and photoelectric performance can be improved.

This application relates to a PN junction, its preparation method and uses, a semiconductor thin film component (especially a photodiode component) comprising the PN junction, a photoelectric sensing module comprising the semiconductor thin film component, and their extensive uses. The PN junction comprises a P-type copper indium gallium selenide semiconductor thin film layer and an N-type copper indium gallium selenide semiconductor thin film layer. The N-type copper indium gallium selenide semiconductor thin film layer is composed of elements such as copper, indium and gallium, wherein the molar ratio of copper to indium is in the range of 1.1 to 1.5 and has the chemical formula Cu(In x Ga 1‑x )Se2, where the value of x is in the range of 0.6 to 0.9. The method for preparing the PN junction uses a quaternary target, is a dry process, does not require a selenization treatment, and can fabricate the PN junction on a flexible substrate.

This invention discloses a photovoltaic glass coating equipment, belonging to the field of photovoltaic glass coating technology. The technical solution includes, in sequence, a feeding zone, a first transition zone, a base film formation zone, a CIGS layer coating zone, an alkali metal fluoride evaporation zone, a CdS layer coating zone, a ZnO layer coating zone, an AZO layer coating zone, a second transition zone, and a unloading zone. This photovoltaic glass coating equipment uses magnetron sputtering to prepare copper indium gallium selenide (CIGS) thin films, resulting in higher continuity and stability in the preparation process.

The present invention discloses a method for preparing a surface-sulfurized copper indium gallium selenide thin film and a solar cell. The method for preparing the surface-sulfurized copper indium gallium selenide thin film comprises the following steps: providing a substrate having a metal bottom electrode layer on its surface; preparing a copper indium gallium selenide thin film on the metal bottom electrode layer to obtain a substrate having a copper indium gallium selenide thin film on its surface; placing the substrate having the copper indium gallium selenide thin film on its surface in an electrolyte containing elemental sulfur, and using an electrochemical ion extraction process to diffuse the elemental sulfur in the electrolyte to the surface of the copper indium gallium selenide thin film to obtain a surface-sulfurized copper indium gallium selenide thin film. The present invention uses an electrochemical ion extraction process to surface-sulfurize a CIGS thin film, allowing the elemental sulfur in the electrolyte to diffuse to the surface layer of the CIGS thin film. The electrochemical ion extraction process can be performed under low-temperature conditions, which is less difficult than existing high-temperature sulfurization processes and can avoid adverse effects on the structure of the CIGS thin film that may be caused by high temperatures.

The present invention provides a tandem solar cell and a preparation method therefor. The tandem solar cell comprises a plurality of insulating layers arranged in sequence. A first electrode layer, a first light absorption layer, and a first carrier transport layer are sequentially arranged on the right side of each insulating layer from bottom to top. A second electrode layer, a second carrier transport layer, and a second light absorption layer are sequentially arranged on the left side of each insulating layer from bottom to top, the second light absorption layer comprising a plurality of vertical regions and a horizontal region. An upper surface of a third carrier transport layer is in contact with a lower surface of the horizontal region, and a lower surface of the third carrier transport layer is in contact with an upper surface of the first carrier transport layer. The carrier type of the first carrier transport layer is the same as that of the second carrier transport layer, and is opposite to that of the third carrier transport layer. The present invention can improve the device performance and stability of tandem solar cells, such as all-perovskite tandem cells and perovskite / copper indium gallium selenide (CIGS) tandem cells, and has broad application prospects.

The present invention discloses a manufacturing method for copper indium gallium selenide sulfide for photovoltaic modules and an application thereof. The manufacturing method includes the following steps: a precursor layer consisting of Cu-Ga alloy and indium is deposited by adopting a sputtering deposition method after the deposition of a sodium-doped layer, where the Cu-Ga alloy is subjected to an improved treatment process in a construction process for the precursor layer before the indium layer is applied; a selenium capping layer is deposited on the precursor layer by adopting evaporation technology; and a rapid thermal annealing process is adopted to anneal the precursor layer structure to form Cu(InGa) (S, Se)2. Subjecting the Cu-Ga alloy to the improved treatment process includes adding a tempering step for the Cu-Ga alloy layer alone, thus effectively reducing the surface roughness of the precursors and the absorber layer as well as optimizing the elemental distribution of the formed absorber layer.

The invention discloses a preparation device and a preparation method of a CIGS absorption layer with a U-shaped gradient band gap structure, and belongs to the technical field of solar cells, the device mainly comprises a plurality of sputtering cavities, a plurality of evaporation cavities, a vulcanization cavity and a cooling cavity which are continuously arranged, a copper gallium sputtering target and an indium sputtering target are arranged in each sputtering cavity, a selenium evaporation nozzle and an artificial lightning generator are arranged in the evaporation cavity, the selenium evaporation nozzle is communicated with a Se evaporation source, the sputtering cavity is communicated with a sputtering gas inlet system, and the vulcanization cavity is communicated with an H2Se / H2S gas inlet system. According to the preparation method, a plurality of sub prefabricated layers containing four elements of Cu, In, Ga and Se are respectively formed in a plurality of sputtering cavities and vacuum cavities, the Ga content in each sub prefabricated layer is respectively controlled, curing treatment is carried out once by using artificial lightning when each sub prefabricated layer is deposited, so that a sub absorption layer with the controllable Ga content is formed, and finally, the CIGS absorption layer with the U-shaped gradient band gap is formed. And electron transmission is enhanced, so that the photoelectric conversion efficiency of the CIGS battery is improved.

An exemplary embodiment of the present disclosure is directed to providing a method of recycling GaAs substrates in epitaxial single crystalline CIGS (copper indium gallium selenide) solar cells. The method allows expensive single crystalline GaAs substrates to be recycled in implementing epitaxial single crystalline CIGS solar cells, and thus it is possible to reduce processing costs when commercializing solar cells.

The present application relates to solid waste green recycling technology field, specifically to a kind of green efficient separation of waste copper indium gallium selenide solar thin film battery method, comprising: waste copper indium gallium selenide solar thin film battery is curled and fixed, then remove fixed, battery is cut into 2×2cm size square piece, put into beaker with deionized water and carry out ultrasonic;After a certain amount of deionized water is added in transient pressure difference separator, put into battery piece, open transient pressure difference separator when temperature, pressure reaches certain condition.The waste copper indium gallium selenide solar thin film battery separation product is obtained.The present application can be in short time to waste copper indium gallium selenide solar thin film battery efficient separation, so that CIGS layer is exposed, solves the problem of large energy consumption, pollution, CIGS layer leaching difficulty, valuable metal enrichment difficulty etc. in waste copper indium gallium selenide solar thin film battery recycling process, its process is green, efficient, simple and suitable for large-scale industrial application.

The invention relates to the technical field of solar cells, and discloses a copper-indium-gallium-selenium three-glass assembly preparation method and a three-glass assembly, the three-glass assembly comprises cover plate glass, substrate glass, back plate glass, a PVB packaging adhesive film and a butyl sealing tape, and the substrate glass comprises a copper-indium-gallium-selenium thin film layer, a molybdenum layer, a bus bar and soda-lime glass. According to the invention, the substrate glass is arranged between the cover plate glass and the back plate glass, the PVB packaging adhesive film and the butyl sealing adhesive tape are combined and laminated by the laminating equipment to form the three-glass assembly, so that the copper indium gallium selenide power generation substrate glass can be well protected. The copper-indium-gallium-selenium thin-film solar cell not only has a solar cell power generation function, but also can replace part of building materials, reduces the occupation of limited area space, can well meet the current popular BIPV (building integrated photovoltaics) market demand, develops a new field and a new market for copper-indium-gallium-selenium thin-film solar cells, and has a wide application prospect. And meanwhile, a basic scheme and technical support are provided for other types of thin film solar cells.

The application provides a porous organic polymer CIGS thin film battery tail gas purification agent and a preparation method thereof, and is characterized by being prepared from the following raw materials: the tail gas purification agent comprises 50-75 parts of a porous organic polymer, 10-35 parts of an active component, and 5-10 parts of a modifier in terms of weight parts, wherein the active component is copper hydroxide and / or permanganate. The tail gas purification agent of the application can be used at room temperature, has high desulfurization efficiency, can be used for removing tail gas discharged in the production process of copper indium gallium selenide thin film solar cell modules, can also be used for other desulfurization scenes, and has a good market prospect.

This invention provides a method for improving the performance of copper indium gallium selenide (CIGS) and copper zinc tin sulfide selenide (CZTSSe) solar cells by controlling the internal ion migration of these cells through an applied bias voltage. This method applies a bias voltage of specific magnitude, direction, and duration to the CIGS and CZTSSe solar cells, driving the directional migration of mobile ions within the devices, thereby controlling the elemental distribution and interfacial chemical state. Specifically, Na ions are enriched at the heterojunction interface, while a small amount of Cd and In ions diffuse downwards to the absorber layer. This effectively passivates harmful defects at the interface and grain boundaries, reduces carrier recombination losses, improves carrier separation and transport characteristics, and ultimately enhances the photovoltaic performance and conversion efficiency of the devices. This invention offers a simple and highly controllable process, providing a new technical approach for the fabrication of high-performance CIGS and CZTSSe solar cells.

The utility model relates to the technical field of coating adsorption platforms, in particular to a CIGS large-area perovskite laminated coating adsorption platform, which comprises an adsorption platform body, one side of the adsorption platform body is connected with a vacuumizing interface and a compressed air interface, the top of the adsorption platform body is provided with a plurality of first micro adsorption holes, and the first micro adsorption holes are communicated with the vacuumizing interface. A plurality of anti-warping areas are arranged at the top of the adsorption platform body, a first gap is formed between every two anti-warping areas, each anti-warping area is composed of two grooves, a second gap is formed between the two grooves in each anti-warping area, the second gap is larger than the first gap, and the first gap is larger than the second gap. According to the utility model, through the redesigned adsorption platform, the adsorption problem caused by downward edge warping of the edge can be well solved, the flatness of a negative film on the adsorption platform is greatly improved, and a guarantee is provided for the film forming quality.

The invention relates to the technical field of glass building materials, and discloses a self-generating glass building material with a display function, which comprises copper indium gallium selenide film self-generating glass; the LED display module array is adhered to the copper indium gallium selenium film self-generating electricity glass and is electrically connected with the copper indium gallium selenium film; the glass packaging layer is arranged on the surface of the LED display module array and is connected with the copper indium gallium selenide film self-generating glass in a sealing manner; a concave lens array is arranged on the surface facing the LED display module array; the surface of each concave lens is coated with a silver deposition layer and a composite layer formed by alternately growing titanium dioxide and silicon dioxide; the light-emitting surfaces of the LED lamp beads face the concave lens; and the LED control chip is electrically connected with the LED display module array. Incident light is focused through the concave lens array, the light is converged to the light-transmitting gaps on the two sides of the lamp strip or the non-shielding area of the power generation glass, and the light utilization rate is increased.

The invention belongs to the field of new energy solid waste recycling, and particularly relates to a method for extracting high-purity copper-indium-gallium-selenium powder from a decommissioned copper-indium-gallium-selenium photovoltaic cell, which comprises the following steps: (1) pretreating the decommissioned copper-indium-gallium-selenium photovoltaic cell to obtain a cell sheet material; (2) mixing alkali liquor with benzyl alcohol and hydrogen peroxide; contacting the cut battery sheet material with the mixed solution and leaching; (3) carrying out ultrasonic treatment on a liquid-solid mixture obtained by leaching, then taking out a substrate, a wire and a resin film with clean surfaces and partially broken EVA from the solution, and leaving black copper indium gallium selenium powder in the solution; (4) filtering the obtained solution containing the copper-indium-gallium-selenium powder to obtain leachate and filter residues; and carrying out post-treatment on filter residues to obtain high-purity copper indium gallium selenium powder. According to the method, the quality and purity of the recovered copper indium gallium selenium powder can be improved, the high recovery rate is guaranteed, and efficient utilization of the retired copper indium gallium selenium photovoltaic cell is achieved.

The utility model discloses a jig for preventing CIGS assembly lamination deviation, which comprises a plurality of jig bodies, each jig body is of a U-shaped structure formed by two L-shaped metal blocks, the inner surface and the outer surface of each jig body are both provided with high-temperature-resistant Teflon adhesive tapes, the opening end of each jig body is provided with a circular ring, and the opening end of each jig body is provided with a through hole. The jig bodies are arranged in parallel in pairs, and the circular rings on the jig bodies arranged in parallel in each group are aligned with one another and connected through high-temperature-resistant ropes. According to the jig for preventing the CIGS component lamination from deviating, the glass lamination can be stably stacked, the position can be well fixed, and the fixing and stable transportation requirements of the CIGS component lamination with different thicknesses can be met.

The present invention relates to the technical field of target material production and processing. The present invention provides a binding process for a copper indium gallium selenide quaternary target material. The copper indium gallium selenide quaternary target material binding process provided by the present invention uses a low-melting-point indium tin alloy and a high-melting-point indium double-layer material to bind a copper backplane and a quaternary material target CIGS, effectively avoiding the influence of the residual stress generated by the high-melting-point metal on the target material during the heating process, greatly improving the stability and accuracy of the target material binding process, and effectively eliminating the possibility of the target material cracking during use; at the same time, it avoids the problem of low-melting-point metal melting during the sputtering process, which has an adverse effect on the use of the target material.

The invention relates to the field of solar cells, and provides a CIGS thin-film solar cell with a flexible polyimide substrate and a preparation method of the CIGS thin-film solar cell with the flexible polyimide substrate. The stainless steel film layer is obtained through deposition on the surface of the flexible polyimide substrate, and the deposition method comprises any one of a magnetron sputtering method and an evaporation method; the chromium metal film layer is obtained through deposition on the surface of the stainless steel film layer, and the deposition method comprises any one of a magnetron sputtering method and an evaporation method; the back electrode layer is made of a molybdenum metal material; the light absorption layer is made of a copper-indium-gallium-selenium material; a buffer layer; a window layer; and a transparent conductive layer. According to the scheme, the stainless steel thin film layer and the chromium metal thin film layer are arranged between the flexible polyimide substrate and the back electrode layer to serve as transition layers, stress can be effectively buffered, the film-base bonding performance of the flexible polyimide substrate and the solar cell film layer is improved, the film layer is prevented from being peeled off and cracked, and the service life of the solar cell is prolonged. And the service life of the solar cell is prolonged.

The present disclosure relates to a flexible copper indium gallium selenide cell and a preparation method thereof. The flexible copper indium gallium selenide cell comprises a P-N junction and a composite window layer covering the P-N junction. The composite window layer comprises a transparent conductive film covering the P-N junction and a high-resistance film covering the transparent conductive film. The transparent conductive film is arranged between the high-resistance film and the P-N junction, so that the positive charges and free electrons can move freely in the transparent conductive film. The free-moving positive charges and free electrons can neutralize each other, so that the charges generated in the deposition process of the high-resistance film can be eliminated, the charge accumulation phenomenon is avoided, the subsequent particle deposition is not affected, the local thinning problem is avoided, the uniformity of the high-resistance film is ensured, and the uniformity of the copper indium gallium selenide cell is improved.

The invention belongs to the field of solar cells, and particularly relates to a perovskite laminated solar cell and a preparation method thereof. The perovskite laminated solar cell sequentially comprises a bottom electrode, a first cell module, a second cell module, a transparent conductive layer, a first grid line electrode and a second grid line electrode, the first battery assembly is selected from one or more of a crystalline silicon battery, a perovskite battery and a copper indium gallium selenium battery, and the second battery assembly is a perovskite battery. According to the perovskite laminated solar cell, the composite grid line structure is adopted, the contact resistance loss between the transparent conducting layer and the grid lines and the loss of bulk resistance transmitted from the fine grid to the main grid can be reduced, and therefore the filling coefficient of a device is increased, and the efficiency of the cell is improved.

This application provides a solar cell and its fabrication method, belonging to the field of solar cell technology. The solar cell includes: a substrate; a Mo back electrode located on the substrate; and a copper indium gallium selenide (CIGS) thin film or a copper indium gallium sulfide (CIGS) thin film located on the surface of the CIGS back electrode away from the substrate. The CIGS thin film or CIGS thin film includes a first surface and a second surface opposite to each other. The first surface of the CIGS thin film or CIGS thin film is close to the Mo back electrode, and the second surface of the CIGS thin film or CIGS thin film is away from the Mo back electrode. On the first surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is A; on the second surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is B, where A > B.

The buffer layer, copper indium gallium selenide thin film solar cell and preparation method provided in the present application are to deposit Zn on the CIGS absorption layer by radio frequency magnetron sputtering. 1‑x Al x (O, S) buffer layer; wherein: in the RF magnetron sputtering method, the working gas is argon and H2S, the argon and H2S flow rate control ratio is in the range of 15:1-30:1, and the S / (S+O) is adjusted by controlling the flow rate of argon and H2S, so that Zn 1‑ x Al x The (O,S) buffer layer and the absorption layer can have a better match, the transmittance of the buffer layer in the visible light region can reach more than 90%, and the optical band gap width of the prepared copper indium gallium selenide thin-film solar cell is between 2.6 and 3.8 eV.

The present invention discloses a manufacturing method for copper indium gallium selenide sulfide for photovoltaic modules and an application thereof. The manufacturing method includes the following steps: a precursor layer consisting of Cu-Ga alloy and indium is deposited by adopting a sputtering deposition method after the deposition of a sodium-doped layer, where the Cu-Ga alloy is subjected to an improved treatment process in a construction process for the precursor layer before the indium layer is applied; a selenium capping layer is deposited on the precursor layer by adopting evaporation technology; and a rapid thermal annealing process is adopted to anneal the precursor layer structure to form Cu(InGa) (S, Se)2. Subjecting the Cu-Ga alloy to the improved treatment process includes adding a tempering step for the Cu-Ga alloy layer alone, thus effectively reducing the surface roughness of the precursors and the absorber layer as well as optimizing the elemental distribution of the formed absorber layer.

The present application relates to a kind of ion implantation equipment and solar cell manufacturing method.The ion implantation is applied to copper indium gallium selenide (CIGS) thin film preparation device, the preparation device includes process cavity, the process cavity is used to form CIGS thin film on substrate, the ion implantation equipment includes: ion accommodating cavity, in the process cavity, the ion accommodating cavity includes release port, the release port is located below the substrate formed with CIGS thin film;Ion generating component, in the ion accommodating cavity, for producing alkali metal ions in the ion accommodating cavity;Ion acceleration component, in the process cavity, for the alkali metal ions generated by the ion generating component are accelerated, so that the alkali metal ions are emitted from the release port, and are directed to the CIGS thin film.This technical solution can accurately control the distribution gradient and concentration of the required alkali metal ions, obtain the perfect distribution of alkali metal ion gradient, enhance the performance of CIGS thin film, save energy consumption.

The invention discloses a method for selectively recycling valuable metals in waste copper indium gallium selenium solar cells. According to the method, efficient recycling of gallium can be achieved only through the two steps of mechanochemical treatment and deionized water extraction, the technological process is greatly shortened, local instantaneous high temperature generated by friction and collision between particles in the ball milling process is utilized, extra external heat energy input is not needed, and the cost is low. In-situ melting of the sodium hydroxide-sodium nitrate eutectic molten salt can be achieved, the copper indium gallium selenium material is effectively activated, and the process efficiency and the energy utilization rate are greatly improved.

The present application relates to the technical field of photovoltaic flexible assembly, and particularly relates to a pretreatment method and system for improving defects of copper indium gallium selenide photovoltaic flexible assembly, which comprises the following steps: step one, welding of chip string; step two, heat pressing of the chip string to expose defective chips; step three, curling test of the heat-pressed chip string to expose damaged chips; and step four, connection of positive and negative electrode lead-out ends of the chip string, light irradiation power generation detection of the chip string, and judgment of whether the chips have defects according to the detection result. The present application sequentially adds the process steps of heat pressing, curling test and chip detection before laying of the photovoltaic flexible assembly, so as to facilitate early identification of defects of the chips and avoid the situation that the chips cannot be replaced after packaging into the assembly.

The invention provides a method for preparing a CIGS (Copper Indium Gallium Selenide) absorption layer and a solar cell using the CIGS absorption layer prepared by the method, and the method for preparing the CIGS absorption layer is characterized by providing a method for preparing the CIGS absorption layer under the assistance of hydrogen plasma annealing, and the method comprises the following steps: step 1, preparing a low-temperature amorphous CIGS prefabricated layer; 2, depositing a high-temperature crystalline CIGS absorption layer by adopting a magnetron sputtering method; and 3, performing hydrogen plasma annealing treatment on the CIGS absorption layer. Therefore, the problems of high internal defects and poor uniformity during large-area preparation of the CIGS thin film prepared by the existing selenylation-free sputtering method are solved, the problems of defects and carrier recombination in the CIGS thin film are reduced, and the photoelectric conversion efficiency and the performance uniformity of the CIGS thin film solar cell are improved.

The invention relates to the field of solar cells, and provides a copper-indium-gallium-selenium thin-film solar cell post-processing method, electronic equipment and a storage medium, and the method comprises the steps: obtaining a pre-prepared semi-finished battery; placing the semi-finished battery under a light source for illumination; wherein the wavelength of the light source is in a first preset wavelength range, and the radiation intensity of the light source is in a first preset radiation intensity range. The invention relates to a CIGS (copper indium gallium selenide) solar cell and a preparation method thereof, which are used for overcoming the defects that the improvement of the structure and the preparation process of a CIGS material in the prior art is limited in the improvement of the power supply power of the cell and cannot meet the demand growth speed of a user. And the photoelectric conversion efficiency of the solar cell is improved.