7 results about "Copper indium diselenide" patented technology

The present application relates to solid waste green recycling technology field, specifically to a kind of green efficient separation of waste copper indium gallium selenide solar thin film battery method, comprising: waste copper indium gallium selenide solar thin film battery is curled and fixed, then remove fixed, battery is cut into 2×2cm size square piece, put into beaker with deionized water and carry out ultrasonic;After a certain amount of deionized water is added in transient pressure difference separator, put into battery piece, open transient pressure difference separator when temperature, pressure reaches certain condition.The waste copper indium gallium selenide solar thin film battery separation product is obtained.The present application can be in short time to waste copper indium gallium selenide solar thin film battery efficient separation, so that CIGS layer is exposed, solves the problem of large energy consumption, pollution, CIGS layer leaching difficulty, valuable metal enrichment difficulty etc. in waste copper indium gallium selenide solar thin film battery recycling process, its process is green, efficient, simple and suitable for large-scale industrial application.

The application provides a porous organic polymer CIGS thin film battery tail gas purification agent and a preparation method thereof, and is characterized by being prepared from the following raw materials: the tail gas purification agent comprises 50-75 parts of a porous organic polymer, 10-35 parts of an active component, and 5-10 parts of a modifier in terms of weight parts, wherein the active component is copper hydroxide and / or permanganate. The tail gas purification agent of the application can be used at room temperature, has high desulfurization efficiency, can be used for removing tail gas discharged in the production process of copper indium gallium selenide thin film solar cell modules, can also be used for other desulfurization scenes, and has a good market prospect.

This invention provides a method for improving the performance of copper indium gallium selenide (CIGS) and copper zinc tin sulfide selenide (CZTSSe) solar cells by controlling the internal ion migration of these cells through an applied bias voltage. This method applies a bias voltage of specific magnitude, direction, and duration to the CIGS and CZTSSe solar cells, driving the directional migration of mobile ions within the devices, thereby controlling the elemental distribution and interfacial chemical state. Specifically, Na ions are enriched at the heterojunction interface, while a small amount of Cd and In ions diffuse downwards to the absorber layer. This effectively passivates harmful defects at the interface and grain boundaries, reduces carrier recombination losses, improves carrier separation and transport characteristics, and ultimately enhances the photovoltaic performance and conversion efficiency of the devices. This invention offers a simple and highly controllable process, providing a new technical approach for the fabrication of high-performance CIGS and CZTSSe solar cells.

The utility model relates to the technical field of coating adsorption platforms, in particular to a CIGS large-area perovskite laminated coating adsorption platform, which comprises an adsorption platform body, one side of the adsorption platform body is connected with a vacuumizing interface and a compressed air interface, the top of the adsorption platform body is provided with a plurality of first micro adsorption holes, and the first micro adsorption holes are communicated with the vacuumizing interface. A plurality of anti-warping areas are arranged at the top of the adsorption platform body, a first gap is formed between every two anti-warping areas, each anti-warping area is composed of two grooves, a second gap is formed between the two grooves in each anti-warping area, the second gap is larger than the first gap, and the first gap is larger than the second gap. According to the utility model, through the redesigned adsorption platform, the adsorption problem caused by downward edge warping of the edge can be well solved, the flatness of a negative film on the adsorption platform is greatly improved, and a guarantee is provided for the film forming quality.

The invention belongs to the field of new energy solid waste recycling, and particularly relates to a method for extracting high-purity copper-indium-gallium-selenium powder from a decommissioned copper-indium-gallium-selenium photovoltaic cell, which comprises the following steps: (1) pretreating the decommissioned copper-indium-gallium-selenium photovoltaic cell to obtain a cell sheet material; (2) mixing alkali liquor with benzyl alcohol and hydrogen peroxide; contacting the cut battery sheet material with the mixed solution and leaching; (3) carrying out ultrasonic treatment on a liquid-solid mixture obtained by leaching, then taking out a substrate, a wire and a resin film with clean surfaces and partially broken EVA from the solution, and leaving black copper indium gallium selenium powder in the solution; (4) filtering the obtained solution containing the copper-indium-gallium-selenium powder to obtain leachate and filter residues; and carrying out post-treatment on filter residues to obtain high-purity copper indium gallium selenium powder. According to the method, the quality and purity of the recovered copper indium gallium selenium powder can be improved, the high recovery rate is guaranteed, and efficient utilization of the retired copper indium gallium selenium photovoltaic cell is achieved.

The present disclosure relates to a flexible copper indium gallium selenide cell and a preparation method thereof. The flexible copper indium gallium selenide cell comprises a P-N junction and a composite window layer covering the P-N junction. The composite window layer comprises a transparent conductive film covering the P-N junction and a high-resistance film covering the transparent conductive film. The transparent conductive film is arranged between the high-resistance film and the P-N junction, so that the positive charges and free electrons can move freely in the transparent conductive film. The free-moving positive charges and free electrons can neutralize each other, so that the charges generated in the deposition process of the high-resistance film can be eliminated, the charge accumulation phenomenon is avoided, the subsequent particle deposition is not affected, the local thinning problem is avoided, the uniformity of the high-resistance film is ensured, and the uniformity of the copper indium gallium selenide cell is improved.

The present application relates to a kind of ion implantation equipment and solar cell manufacturing method.The ion implantation is applied to copper indium gallium selenide (CIGS) thin film preparation device, the preparation device includes process cavity, the process cavity is used to form CIGS thin film on substrate, the ion implantation equipment includes: ion accommodating cavity, in the process cavity, the ion accommodating cavity includes release port, the release port is located below the substrate formed with CIGS thin film;Ion generating component, in the ion accommodating cavity, for producing alkali metal ions in the ion accommodating cavity;Ion acceleration component, in the process cavity, for the alkali metal ions generated by the ion generating component are accelerated, so that the alkali metal ions are emitted from the release port, and are directed to the CIGS thin film.This technical solution can accurately control the distribution gradient and concentration of the required alkali metal ions, obtain the perfect distribution of alkali metal ion gradient, enhance the performance of CIGS thin film, save energy consumption.