Method for preparing copper indium gallium selenide solar cell optical absorption layer

A solar cell, copper indium gallium selenide technology, applied in the direction of circuits, electrical components, final product manufacturing, etc., can solve the problems affecting the large-scale production of CIGS, complex equipment, difficult high temperature and high pressure, etc., to achieve environmental protection and large-scale production. , The effect of simple equipment structure and high production efficiency

Inactive Publication Date: 2012-07-11
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]IBM company uses solution method to prepare CIGS solution with hydrazine (NH2NH2) as solvent and spin coating The conversion efficiency of CIGS solar cells prepared by film formation and heat treatment ("Thin Solid Films" 2009, No. 517, 2158–2162) exceeds 10%, but NH2NH2 It is a highly volatile and highly toxic solvent, which limits the large-scale promotion of this method
Kvapur et al. ("Thin Solid Films" 2003, No. 431–432, 53–57) used metal oxides as precursors, selenized in hydrogen sulfide (H2Se) after hydrogen reduction The conversion efficiency of CIGS solar cells reaches 13.6%, but H2Se is an expensive and highly toxic volatile gas, which has extremely ...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) According to the molecular formula CuInSe 2 The mol ratio of Cu, In and Se in weighs 2.060g of cuprous selenide (Cu 2 Se) and 4.663g of indium selenide (In 2 Se 3 ) were mixed and placed in a ball mill jar for ball milling for 8 hours to prepare a chalcopyrite-type CuInSe with a particle size of 10nm-5000nm 2 Nanoparticles;

[0019] (2) The prepared CuInSe 2 Nanoparticles are dispersed in 70 ml of dispersant ethylene glycol and 0.1 g of film-forming agent vinyl cellulose, 2 ml of terpineol, 0.01 g of polyoxypropylene ether, and 0.01 g of polyurethane-modified butadiene resin. In the composed solvent, CuInSe is dispersed by mechanical stirring to form a uniform and stable CuInSe with suitable viscosity 2 Precursor slurry;

[0020] (3) The prepared CuInSe 2 The precursor slurry was sprayed onto the cleaned silicon wafer, then placed on a preheated electric furnace, and dried to remove the dispersant and film-forming agent. The drying time was 5 min, and the tem...

Embodiment 2

[0024] (1) According to the molecular formula CuIn 0.5 Ga 0.5 Se 2 The molar ratio of Cu, In, Ga and Se in the medium weighs 2.060 g of Cu 2 Se, 2.332 g of In 2 Se 3 , 1.882 g of Gallium Selenide (Ga 2 Se 3 ) were mixed and placed in a ball mill jar for 12 hours to prepare CuIn with a particle size of 10 nm-5000 nm 0.5 Ga 0.5 Se 2 Nanoparticles;

[0025] (2) The prepared CuIn 0.5 Ga 0.5 Se 2The nanopowder is dispersed in a mixed solvent composed of 90 ml of methanol as a dispersant and 0.02 g of butadiene resin as a film-forming agent, 0.2 g of methyl cellulose, 0.1 g of polyvinyl alcohol, 0.01 g of EDTA, and 0.01 g of polyethylene In the medium, a uniform and stable CuIn with suitable viscosity is formed after magnetic stirring 0.5 Ga 0.5 Se 2 Precursor slurry;

[0026] (3) The prepared CuIn 0.5 Ga 0.5 Se 2 The precursor slurry was scraped onto the cleaned borosilicate glass sheet, then placed in a preheated electric furnace, and dried to remove the dispers...

Embodiment 3

[0030] (1) According to the molecular formula CuIn 0.7 Ga 0.3 Se 2 The molar ratio of Cu, In, Ga and Se in the medium weighs 2.060g of Cu 2 Se, 3.264g of In 2 Se 3 , 1.129g of Ga 2 Se 3 After mixing, put it in a ball mill jar and mill it for 6 hours to prepare CuIn with a particle size of 50 nm-5000 nm 0.7 Ga 0.3 Se 2 Nanoparticles;

[0031] (2) The prepared CuIn 0.7 Ga 0.3 Se 2 Nano-powder is dispersed in 100 milliliters of dispersant absolute ethanol and film-forming agent 0.3g terpineol, 0.01g ethyl cellulose, 0.02g EDTA, 0.01g polyoxypropylene ether, 0.01g polyurethane modified butadiene fiber In the mixed solvent of the composition, the uniform and stable CuIn with suitable viscosity is formed after grinding 0.7 Ga 0.3 Se 2 Precursor slurry;

[0032] (3) The prepared CuIn 0.7 Ga 0.3 Se 2 The precursor slurry was spin-coated on the cleaned soda-lime glass sheet, and then placed on a pre-heated electric furnace, heat-treated to remove the dispersant and f...

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Abstract

The invention relates to the preparation technology of film solar cell, in particular to a preparation method for a copper indium gallium selenide optical absorption layer. The preparation method comprises the steps of (1) uniformly mixing, stirring and ball-milling selenide of metal copper, indium and gallium or metal copper, indium and gallium and selenium simple substance in stoichiometric ratio, and obtaining copper indium gallium selenide nano particles, of which the particle diameter is 10-10,000nm, wherein the atom molar ratio of Cu: In: Ga: Se is (0.9-1):(0-1): (0-1):2; (2) dispersing the copper indium gallium selenide nano particles in a mixing solution formed by dispersant and film-forming agent; stirring or grinding or magnetically stirring and dispersing the particles so as to obtain CIGS (Copper Indium Gallium Selenide) precursor slurry; (3) coating a substrate with the precursor film, drying the precursor film in the air atmosphere to remove the dispersant and the film-forming agent; and obtaining precursor film; and (4) quickly warming and thermally treating the precursor film in the insert atmosphere to obtain copper indium gallium selenide solar cell optical absorption layer film finished product. The method provided by the invention simplifies the process flow, has high production efficiency and is helpful for environment friendliness and; and the method broadens the idea for large-scale industrialization of CIGS film solar cell.

Description

technical field [0001] The invention relates to a preparation method of a thin-film solar cell in the field of new energy, in particular to a preparation method of a copper indium gallium selenide light absorbing layer in the solar cell. Background technique [0002] Energy shortage and environmental pollution are major issues facing the 21st century. The development of clean and environmentally friendly new energy to replace traditional fossil energy has become one of the effective scientific ways to solve these problems. Among them, as an inexhaustible, inexhaustible, environmentally friendly and pollution-free renewable energy, solar energy is ubiquitous, making solar photovoltaic power generation an important part of the development of new energy. At present, silicon solar cells, the most mature technology in the market, are limited in their development as the most ideal solar energy materials due to the characteristics of high pollution, high energy consumption, high c...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘英孔德义尤晖赵聪陈池来林新华高理升王焕钦李加伟
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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